Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits

Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits.

Study on Net Hauler Safety Device for Fishing Vessels

[Objective] To design a safety device set for fishing vessel net hauler, in order to reduce the severe potential safety hazards in offshore operation. [Method] In view of the operation and structure of net hauler on the fishing trawler, this paper investigated the existing safety protection devices and designed a new set of purely mechanical structure without changing the original structures of the vessel significantly. [Result] Using the easily-adjustable functions of the main shaft of CNC lathe, and simulating the operation performance of different hauling line speeds and testing the safety device, the results showed that the new device could protect the crew from safety accidents caused by net hauler. [Conclusion] The result provides references for the design and application of mechanical protection devices for net haulers on other fishing trawlers.

Review of My Research Work on Ferroelectric Films and Si-Based Device Applications: Opportunity and Challenge

Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.

Study on Measuring Device for Bearing Clearance of Hemisphere Dynamic Pressure Motor

The clearance of the hemisphere dynamic pressure motor is small and difficult to measure, the measurement method of micro clearance is studied. The shortcomings of the original measurement method are analyzed, and a clearance measuring device for the hemisphere dynamic pressure motor is designed, which improves the measurement efficiency and stability.

Research on the temperature characteristic of Love wave device with structure of multi-waveguides used for gas sensor

This paper aimed at extracting optimal structural parameters for Love wave device with structure of multi-waveguides to improve its temperature stability. The theoretical model dealing with the Love wave propagation in multi-waveguides was established first, the dispersion characteristic is depicted by the acoustic propagation theory of stratified media and boundary conditions. Combing with the dispersion characteristics and Tomar＇s method, the optimal structural parameters for the Love wave device with zero temperature coefficient were extracted, and confirmed by the following experimental results. Excellent temperature coefficient of the Love wave device with SU-8/SiO2 on ST-90°X quartz substrate was evaluated experimentally as only 2.16 ppm/℃, which agrees well with the calculated results. The optimized Love wave device is very promising in gas sensing application.