Effects of rare earth element lanthanum on the microstructure of copper matrix diamond tool materials

Effects of rare earth element La on the microstructure of Cumatrix diamond tools were researched under the conditions of variousmaterials components and the process parameters in order to improvematerials properties. SEM, XPS and X-ray were used to investigate thefracture section, microstructure and the element valence inmaterials. The Results shown that the combination of rare earthelement La and transition element Ti is advantageous to the bondingstate Between diamond particles and matrix, so it can improve thematerials properties. Suitable sintering temperature is 790 deg. C.

Thermal conductivity of diamond/copper composites with a bimodal distribution of diamond particle sizes prepared by pressure infiltration method

The thermal conductivity of diamond/copper composites with bimodal particle sizes was studied. The composites were prepared through pressure infiltration of liquid copper into diamond preforms with a mixture of 40 and 100 pm-size diamonds. The permeability of the preforms with different coarse-to-fine volume ratios of diamonds was investigated. The thermal conductivity of the diamond/copper composites with bimodal size distribution was compared to the theoretical value derived from an analytical model developed by Chu. It is predicted that the diamond/copper composites could reach a higher thermal conductivity and their surface roughness could be improved by applying bimodal diamond particle sizes.

Effects of submicron diamonds on the growth of copper in Cu-diamond co-deposition

Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred ori- entation of copper grains transformed from （220） to （200）. Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain tmchanged when copper plane （220） grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane （200） grew in the process of co-deposition. It was inferred that copper plane （200） was propitious to the deposition of submicron diamonds.

Deposition of Diamond Films on Copper Substrate

The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.

Effects of Implant Copper Layer on Diamond Film Deposition on Cemented Carbides

The deposition of high-quality diamond films and their adhesion on cemented carbides are strongly influenced by the catalytic effect of cobalt under typical deposition conditions. Decreasing Co content on the surface of the cemented carbide is often used for the diamond film deposition. But the leaching of Co from the WC-Co substrate leading to a mechanical weak surface often causes a poor adhesion. In this paper we adopted an implant copper layer prepared by vaporization to improve the mechanical properties of the Co-leached substrate. The diamond films were grown by microwave plasma chemical vapor deposition from CH4:H2 gas mixture. The cross section and the morphology of the diamond film were characterized by scanning electron microscopy (SEM). The non-diamond content in the film was analyzed by Raman spectroscopy. The effects of pretreatment on the concentrations of Co and Cu near the interfacial region were examined by energy dispersive spectrum (EDS) equipped with SEM. The adhesion of the diamond on the substrate was evaluated with a Rockwell-type hardness tester. The results indicate that the diamond films prepared with implant copper layer have a good adhesion to the cemented carbide substrate due to the recovery of the mechanical properties of the Co-depleted substrate after the copper implantation and the formation of less amorphous carbon between the substrate and the diamond film.

Fabrication and characterization of copper-diamond particles

The electroless copper deposition on both pure and Cr-coated diamond particles was stud- ied to produce copper/diamond composites for electronic packaging materials. The particles were characterized and the mechanism of product formation was investigated through scanning electron microscopy （SEM）, energy dispersive spectroscopy （EDS）, X-ray diffraction （XRD）, and X-ray photoelectron spectra （XPS）. The particle coating thickness was measured using optical micro- graphs. The diamond particles got uniform coating thickness of copper crystals layers. This method provided an excellent base for the fabrication of metal-based composites using cheap equipments, and was less time consuming, nature friendly and economical compared with other methods of dia- mond surface metallization.

金刚石粒径对金刚石/Cu-B合金复合材料热物理性能的影响

采用Cu-B合金为基体,选用粒径分别为110、230、550μm的金刚石颗粒作为增强体,利用气压熔渗工艺在1100℃、10 MPa气体压力下制备金刚石/Cu-B合金复合材料,研究金刚石颗粒粒径对复合材料组织结构、界面相分布及热物理性能的影响。结果表明,随着金刚石粒径的增大,复合材料热导率上升,热膨胀系数减小,复合材料界面处硼碳化合物含量增加,界面结合情况得到改善。由金刚石颗粒粒径为550μm时,复合材料热导率最高,可达680.3 W/(m·K),热膨胀系数最小,为4.905×10^(−6)K^(−1),符合高效热管理器件对金刚石/金属基复合材料的热物理性能要求,在电子产品散热器件方面具有良好的应用前景。

Ag-Cu-Sn-Cr真空钎焊金刚石/铜合金接头微观组织与剪切强度

采用Ag-Cu-Sn-Cr活性钎料,将金刚石膜片与铜合金进行了钎焊连接。研究分析了钎焊温度对连接接头微观组织及接头力学性能的影响。结果表明,钎料与金刚石的界面结合良好,钎料中的Cr与金刚石发生反应并在界面处形成Cr_(3)C_(2)碳化物。钎缝中心主要由Cu基固溶体、Ag基固溶体、Cu_(3)Sn金属间化合物和Cr组成。当钎焊温度在780~840℃范围时,随着温度的提高,界面反应层逐渐增厚,钎焊接头剪切强度先升高后降低。在最佳的钎焊温度820℃和保温时间15 min下,接头剪切强度达到最高值147 MPa。通过优化钎焊温度,成功实现了金刚石膜片与铜合金的可靠连接。该方法可为实际工业生产中硬脆材料与金属的连接提供新的思路与技术途径。

太赫兹低损耗金刚石-无氧铜输能窗研究

首次开展太赫兹金刚石-无氧铜盒型输能窗研究,利用低损耗的无氧铜材料代替传统可伐合金材料,显著降低输能窗传输损耗、提高器件输出功率。为降低无氧铜与金刚石热膨胀系数严重不匹配造成的封接应力,提出一种多槽应力释放结构,将金刚石表面封接应力由210 MPa减小至50 MPa,小于金刚石与无氧铜组合抗拉件的平均封接强度116.2 MPa。根据设计结果,开展金刚石-无氧铜输能窗封接试验,氦漏率≤1×10^(-11)(Pa·m^(3))/s,实现了气密封接。测试金刚石-无氧铜输能窗传输损耗为0.7 dB,比采用金刚石-可伐输能窗的传输损耗减小2 dB,即输出功率可以提高60%,为研制大功率太赫兹源奠定了重要关键技术基础。

钨粉粒径对金刚石扩散镀钨影响的研究

金刚石镀钨能够改善铜与金刚石的润湿性,有助于合成金刚石/铜复合材料。采用扩散烧结法对金刚石表面进行处理,研究钨粉粒径对镀层的影响。并对试验机理及规模化生产的可行性进行了论述。试验结果表明:钨粉粒径过小或过大时均镀覆失败,其最佳镀覆粒径为金刚石粒径的1/3~2/3;金刚石烧结量对镀层影响关系很小,真空扩散镀钨烧结法适用于工业批量生产。

Selective interfacial bonding and thermal conductivity of diamond/Cu-alloy composites prepared by HPHT technique

Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature （HPHT） sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding strength and thermo-physical properties of the composites were achieved using an atomized copper alloy with minor additions of Co, Cr, 13, and Ti. The thermal conductivity （TC） oh- mined exhibited as high as 688 W.m-1.K-1, but also as low as 325 W.m-1.K-l. A large variation in TC can be rationalized by the discrepancy of diamond-matrix interfacial bonding. It was found from fractography that preferential bonding between diamond and the Cu-alloy matrix occurred only on the diamond {100} faces. EDS analysis and Raman spectra suggested that selective interfacial bonding may be attributed to amorphous carbon increasing the wettability between diamond and the Cu-alloy matrix. Amorphous carbon was found to significantly affect the TC of the composite by interface modification.

Effect of sintering on the relative density of Cr-coated diamond/Cu composites prepared by spark plasma sintering

Cr-coated diamond/Cu composites were prepared by spark plasma sintering. The effects of sintering pressure, sintering temperature, sintering duration, and Cu powder particle size on the relative density and thermal conductivity of the composites were investigated in this paper. The influence of these parameters on the properties and microstructures of the composites was also discussed. The results show that the relative density of Cr-coated diamond/Cu reaches ~100% when the composite is gradually compressed to 30 MPa during the heating process. The densification temperature increases from 880 to 915℃ when the diamond content is increased from 45vol% to 60vol%. The densification temperature does not increase further when the content reaches 65vol%. Cu powder particles in larger size are beneficial for increasing the relative density of the composite.

Effect of sintering parameters on the microstructure and thermal conductivity of diamond/Cu composites prepared by high pressure and high temperature infiltration

Pure Cu composites reinforced with diamond particles were fabricated by a high pressure and high temperature （HPHT） infiltration technique. Their microstructural evolution and thermal conductivity were presented as a function of sintering parameters （temperature, pressure, and time）. The improvement in interfacial bonding strength and the maximum thermM conductivity of 750 W/（m.K） were achieved at the optimal sintering parameters of 1200℃, 6 GPa and 10 min. It is found that the thermal conductivity of the composites depends strongly on sintering pressure. When the sintering pressure is above 6 GPa, the diamond skeleton is detected, which greatly contributes to the excellent thermal conductivity.

Microstructure of fast tool servo machining on copper alloy

The development of the fast tool servo (FTS) for precision machining was investigated.The micron machining performance of a piezoelectric-assisted FTS on copper alloy was evaluated.The results indicate that the quality of the microstructure depends mainly on two important factors:the cutting speed (or spindle speed) and the driving frequency of the FTS.The excessive driving frequency increases the formation of burrs.The effect of the clearance angle of the diamond tool on the microstructure machining precision was also investigated.

Pressure infiltrated Cu/diamond composites for LED applications

Diamond reinforced copper （Cu/diamond） composites were prepared by a pressure infilla＇ation technique. The composites show a super high conductivity of 713 W.m-1.K-1 in combination with an extremely low coefficient of thermal expansion （CTE） of 7.72 × 10-6 K-1 （25-100℃）, which are achieved by modifying the copper matrix with adding 0.3 wt.% of boron to get a good thermal contact between the matrix and the diamond particles. By adopting a series of postmachining techniques the composites were made into near-net-shape parts, and an electroless silver coating was also successfully plated on the composites. Finally, their potential applications in the thermal management of fight emitting diodes （LED） were illustrated via prototype examples.

Effect of Boron Addition on the Thermal Properties of Diamond-Particle-Dispersed Cu-Matrix Composites Fabricated by SPS

Diamond particle dispersed copper (Cu) matrix composites were fabricated from the powder mixture composed of diamond, pure-Cu and boron (B) by spark plasma sintering (SPS). The composites were consolidated at 1173 K for 600 s by SPS. The reaction between the diamond particle and the Cu matrix in the composite was not confirmed by SEM observation and X-ray diffraction (XRD) analysis. The relative packing density of the Cu/diamond composites increased with B addition and attained 93.2% - 95.8% at the B content range between 1.8 vol.% and 13.8 vol.%. The thermal conductivity of the diamond-dispersed Cu composite drastically increased with B addition and reached the maximum value of 689 W/mK at 7.2 vol% B. Numerous transgranular fractures of diamond particles were observed on bending fracture surfaces of Cu-B/diamond composites. This indicates strong bonding between the diamond particle and the Cu matrix in the composite. The coefficient of thermal expansion of the composite falls in the upper line of Kerner’s model.

Machining characteristics of complex prism pattern on electroplated roll by copper

The BLU (back light unit) is the core component of the LCD for notebook, mobile-phone, navigation, as well as large sized TV, PID (public information display), etc. In order to enhance optical efficiency of LCD, optical films with the uniform prism patterns have been used for BLU by stacking two films up orthogonally. In this case, light interference-phenomenon occurred such as Morie, wet-out, u-turning, etc. It caused several problems such as low brightness, spots and stripes in LCD. Recently, the high-luminance micro complex prism patterns are actively studied to avoid the light interference-phenomenon and enhance the optical efficiency. In this study, the roll master to manufacture complex micro prism pattern film was machined by using the high precision lathe. The machined patterns on the roll master were 50, 45, 40, 35, 30, 25, 20, 15, 10 and 5 μm in the pitch with 25.0, 22.5, 20.0, 17.5, 15.0, 12.5, 10.0, 7.5, 5.0 and 2.5 μm in the peak height, respectively. The roll was 2 000 mm in length and 320 mm in diameter. The electroplated roll by copper and the natural single crystal diamond tool was used for machining the patterns. The cutting force was measured and analyzed for each cutting condition by using the dynamometer. The chips and the surfaces after being machined were analyzed by SEM and microscope.

铜/金刚石复合材料化学镀铜后的组织结构和焊接性

铜/金刚石复合材料具有高的热导率及与半导体材料相匹配的热膨胀系数,是功率器件散热的理想材料。但由于金刚石的非金属特性,铜/金刚石复合材料在使用过程中存在焊接性差的问题。针对该问题,通过化学镀铜来提高铜/金刚石复合材料的润湿性和焊接性。在化学镀铜之前,先用稀硫酸粗化复合材料,然后用氯化亚锡溶液敏化,再用氯化钯溶液活化。通过扫描电镜、X射线衍射和拉拔试验研究了化学镀铜时间对镀层微观形貌、厚度、晶相结构及膜基结合强度的影响。结果表明,化学镀铜60 min时镀层较为均匀、致密,膜基结合强度最高,尤其是金刚石粒径为116μm的铜/金刚石复合材料表面铜镀层的膜基结合强度达27.6 MPa。在相同的镀覆条件下,金刚石粒径小的铜/金刚石复合材料的膜基结合强度高于金刚石粒径大的铜/金刚石复合材料。润湿角测试和焊料铺展试验结果表明,铜/金刚石复合材料表面化学镀铜后焊接性提高。

电子封装用高导热金刚石/铜复合材料的研究进展

金刚石/铜复合材料由于具有热导率高、热膨胀系数低等优异的特性,已经逐步替代传统的散热材料,成为新一代电子封装材料。近年来,价格不断下降的人造金刚石和铜这种相对价格低廉的金属结合,实现人们对电子封装材料性能优越、成本可控的要求。介绍了金刚石/铜复合材料的主要制备方法以及如何改善与提高这类材料的热导率。然而,对于当前工业化的迅猛发展以及5G时代的到来,如何实现高热导率的金刚石/铜复合材料的大规模工业生产,仍然是一个挑战。

模拟研究碳化钛涂覆铜/金刚石复合材料的界面热导

利用分子动力学模拟,从微观角度定性分析了碳化物界面层的厚度、体系热浴位置、温度及应变对涂覆碳化钛的铜/金刚石复合材料的界面热导(ITC)的影响规律。结果发现,复合材料的界面热导随碳化钛界面层厚度的增加先增加后减小,与试验数据的变化趋势一致;当碳化钛界面层为3层时,复合材料的界面热导最佳。通过设置体系的不同热浴位置进行模拟分析,发现其对导热的影响不大。模拟结果表明,升高温度与压缩应变能够改善复合材料的界面热导。研究结果对进一步理解及优化铜/金刚石复合材料的界面热导提供了理论参考。