The effect of silicon doping on the residual stress of CVD diamond films is examined using both X-ray diffraction (XRD) analysis and Raman spectroscopy measurements. The examined Si-doped diamond films are deposited o...The effect of silicon doping on the residual stress of CVD diamond films is examined using both X-ray diffraction (XRD) analysis and Raman spectroscopy measurements. The examined Si-doped diamond films are deposited on WC-Co substrates in a home-made bias-enhanced HFCVD apparatus. Ethyl silicate (Si(OC2H5)4) is dissolved in acetone to obtain various Si/C mole ratio ranging from 0.1% to 1.4% in the reaction gas. Characterizations with SEM and XRD indicate increasing silicon concentration may result in grain size decreasing and diamond [110] texture becoming dominant. The residual stress values of as-deposited Si-doped diamond films are evaluated by both sin2ψ method, which measures the (220) diamond Bragg diffraction peaks using XRD, with ψ-values ranging from 0° to 45°, and Raman spectroscopy, which detects the diamond Raman peak shift from the natural diamond line at 1332 cm-1. The residual stress evolution on the silicon doping level estimated from the above two methods presents rather good agreements, exhibiting that all deposited Si-doped diamond films present compressive stress and the sample with Si/C mole ratio of 0.1% possesses the largest residual stress of ~1.75 GPa (Raman) or ~2.3 GPa (XRD). As the silicon doping level is up further, the residual stress reduces to a relative stable value around 1.3 GPa.展开更多
Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm^2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition （MPCVD） reactor using CH4/H2/H2O gas mixtures. The growth rate...Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm^2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition （MPCVD） reactor using CH4/H2/H2O gas mixtures. The growth rate, radial profiles of the film thickness, diamond morphology and quality were evaluated with a range of parameters such as the substrate temperature of 700℃ to 1100℃, the fed gas composition CH4/H2 = 3.0%, H2O/H2 = 0.0%,-2.4%. They were characterized by scanning electron microscopy and Raman spectroscopy. Translucent diamond wafers have been produced without any sign of non-diamond carbon phases, Raman peak as narrow as 4.1 cm^-1. An interesting type of diamond growth instability under certain deposition conditions was observed in a form of accelerated growth of selected diamond crystallites of a very big lateral size, about 1 mm, and of a better structure compared to the rest of the film.展开更多
Polycrystalline diamond（PCD） films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition（MPCVD） at different process parameters,and their thermal conductivity（TC） is evaluated by a l...Polycrystalline diamond（PCD） films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition（MPCVD） at different process parameters,and their thermal conductivity（TC） is evaluated by a laser flash technique（LFT） in the temperature range of230-380 K.The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon（a-C） presence in the spectra.Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples,respectively.TC,as high as 1950 ± 230 W m-1 K-1 at room temperature,is measured for the most perfect material.A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established.展开更多
This paper is about the diamond films fabricated by dc plasma jet method. Scanning electron microscopy(SEM), X-ray diffractometry and Roman scattering spectroscopy have been used to characterize the diamond films depo...This paper is about the diamond films fabricated by dc plasma jet method. Scanning electron microscopy(SEM), X-ray diffractometry and Roman scattering spectroscopy have been used to characterize the diamond films deposited under different experimental conditions and different substrates.展开更多
基金Project (51005154) supported by the National Natural Science Foundation of ChinaProject (12CG11) supported by the Chenguang Program of Shanghai Municipal Education Commission, ChinaProject (201104271) supported by the China Postdoctoral Science Foundation
文摘The effect of silicon doping on the residual stress of CVD diamond films is examined using both X-ray diffraction (XRD) analysis and Raman spectroscopy measurements. The examined Si-doped diamond films are deposited on WC-Co substrates in a home-made bias-enhanced HFCVD apparatus. Ethyl silicate (Si(OC2H5)4) is dissolved in acetone to obtain various Si/C mole ratio ranging from 0.1% to 1.4% in the reaction gas. Characterizations with SEM and XRD indicate increasing silicon concentration may result in grain size decreasing and diamond [110] texture becoming dominant. The residual stress values of as-deposited Si-doped diamond films are evaluated by both sin2ψ method, which measures the (220) diamond Bragg diffraction peaks using XRD, with ψ-values ranging from 0° to 45°, and Raman spectroscopy, which detects the diamond Raman peak shift from the natural diamond line at 1332 cm-1. The residual stress evolution on the silicon doping level estimated from the above two methods presents rather good agreements, exhibiting that all deposited Si-doped diamond films present compressive stress and the sample with Si/C mole ratio of 0.1% possesses the largest residual stress of ~1.75 GPa (Raman) or ~2.3 GPa (XRD). As the silicon doping level is up further, the residual stress reduces to a relative stable value around 1.3 GPa.
基金Hubei Province Science and Technology Department with a Grant No. 2002AA105A02） the Team of Innovation of Hubei Province Education Department （2004） partly by the National Natural Science Foundation of China with a Grant No. 50572075
文摘Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm^2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition （MPCVD） reactor using CH4/H2/H2O gas mixtures. The growth rate, radial profiles of the film thickness, diamond morphology and quality were evaluated with a range of parameters such as the substrate temperature of 700℃ to 1100℃, the fed gas composition CH4/H2 = 3.0%, H2O/H2 = 0.0%,-2.4%. They were characterized by scanning electron microscopy and Raman spectroscopy. Translucent diamond wafers have been produced without any sign of non-diamond carbon phases, Raman peak as narrow as 4.1 cm^-1. An interesting type of diamond growth instability under certain deposition conditions was observed in a form of accelerated growth of selected diamond crystallites of a very big lateral size, about 1 mm, and of a better structure compared to the rest of the film.
基金supported by the Russian Ministry of Education and Science(RMES),Agreement No.14.613.21.0021,unique ID No.RFMEFI61314X0021the Department ofScience & Technology(DST),India,grant No.GAP0246 under the joint RMES-DST Research Collaboration Agreement 'Development of large size polycrystalline CVD diamond material for optical windows and support rods in high power microwave tubes'
文摘Polycrystalline diamond（PCD） films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition（MPCVD） at different process parameters,and their thermal conductivity（TC） is evaluated by a laser flash technique（LFT） in the temperature range of230-380 K.The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon（a-C） presence in the spectra.Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples,respectively.TC,as high as 1950 ± 230 W m-1 K-1 at room temperature,is measured for the most perfect material.A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established.
文摘This paper is about the diamond films fabricated by dc plasma jet method. Scanning electron microscopy(SEM), X-ray diffractometry and Roman scattering spectroscopy have been used to characterize the diamond films deposited under different experimental conditions and different substrates.
