During the growth of the hot filament chemical vapor deposition (HFCVD) diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on...During the growth of the hot filament chemical vapor deposition (HFCVD) diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on the gas physical parameters, including the temperature, velocity and volume density of gas. It was found that, even in the case of optimized deposition parameters, the space distributions of gas parameters were heterogeneous due primarily to the thermal blockage come from the hot filaments and cryogenic pump effect arisen from the cold reactor wall. The distribution of volume density agreed well with the thermal round-flow phenomenon, one of the key obstacles to obtaining high growth rate in HFCVD process. In virtue of isothermal boundary with high temperature or adiabatic boundary condition of reactor wall, however, the thermal roundflow was profoundly reduced and as a consequence, the uniformity of gas physical parameters was considerably improved, as identified by the experimental films growth.展开更多
Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron micr...Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron microscope (SEM) and Raman spectrum. The influence of substrate temperature on the nucleation behavior of diamond was discussed in detail and the optimized deposition condition has been obtained.展开更多
The etching technique using Ce is a convenient and fast method for polishing and shaping diamond films. In this study, the influence of polishing parameters such as polishing temperature and time on the surface crysta...The etching technique using Ce is a convenient and fast method for polishing and shaping diamond films. In this study, the influence of polishing parameters such as polishing temperature and time on the surface crystallinity and phase composition of diamond films was thoroughly investigated via the analysis of Raman spectra such as FWHM and ID/IG. Moreover, the issue on the graphitization of diamond after polishing with Ce was further researched through the detailed study of the depth distribution of Raman data including FWHM and ID/IG, and a result completely different from the hot-iron metal polished ones was obtained. The results showed that polished diamond films had considerably higher diamond content than those before polishing, and not a bit of graphitization was found in the polished ones, owing to a higher solubility of carbon in rare earth metal Ce than that in transition metals, and the original crystallinity of the films polished with Ce did not deteriorate.展开更多
With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD) are considered to be one of the most pro...With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD) are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method (TLM). Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.展开更多
Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond (MCD) films. Its electrical field...Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond (MCD) films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.展开更多
Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed ...Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed by SEM. Raman spectrometer wasused to characterize the quality of diamond films. The IR transmittivity measured by IR spectrometer is close to the theoretical value ofabout 71% in the far infrared band. The thermal conductivity measured by photothermal deflection exceeds 18 W/cm' K. <l 10> is thepreferential growth orientation of the films detected by X-ray diffractometer. As s result, the extremely high temperature of DC arc plasma jet can produce supersaturated atomic hydrogen, which played an important role in the process for the deposition of high quality diamond films.展开更多
Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used...Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results.展开更多
Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investig...Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 10^14 cm^-2 or 10^15 cm^-2 is favourable for producing less damaged O-doDed diamond films.展开更多
Nano-diamond particles are co-deposited on Ti substrates with metal(Ti/Ni) nanoparticles(NPs) by the electrophoretic deposition(EPD) method combined with a furnace annealing at 800℃ under N_(2) atmosphere. Modificati...Nano-diamond particles are co-deposited on Ti substrates with metal(Ti/Ni) nanoparticles(NPs) by the electrophoretic deposition(EPD) method combined with a furnace annealing at 800℃ under N_(2) atmosphere. Modifications of structural and electron field emission(EFE) properties of the metal-doped films are investigated with different metal NPs concentrations. Our results show that the surface characteristics and EFE performances of the samples are first enhanced and then reduced with metal NPs concentration increasing. Both the Ti-doped and Ni-doped nano-diamond composite films exhibit optimal EFE and microstructural performances when the doping quantity is 5 mg. Remarkably enhanced EFE properties with a low turn-on field of 1.38 V/μm and a high current density of 1.32 mA/cm^(2) at an applied field of 2.94 V/μm are achieved for Ni-doped nano-diamond films, and are superior to those for Ti-doped ones. The enhancement of the EFE properties for the Ti-doped films results from the formation of the TiC-network after annealing. However, the doping of electron-rich Ni NPs and formation of high conductive graphitic phase are considered to be the factor, which results in marvelous EFE properties for these Ni-doped nano-diamond films.展开更多
Microcrystalline diamond(MCD)films with different grain sizes ranging from 160 nm to 2200 nm are prepared by using a hot filament chemical vapor deposition(HFCVD)system,and the influences of grain size and structural ...Microcrystalline diamond(MCD)films with different grain sizes ranging from 160 nm to 2200 nm are prepared by using a hot filament chemical vapor deposition(HFCVD)system,and the influences of grain size and structural features on optical properties are investigated.The results show that the film with grain size in a range of 160 nm–310 nm exhibits a higher refractive index in a range of(2.77–2.92).With grain size increasing to 620±300 nm,the refractive index shows a value between 2.39 and 2.47,approaching to that of natural diamond(2.37–2.55),and a lower extinction coefficient value between 0.08 and 0.77.When the grain size increases to 2200 nm,the value of refractive index increases to a value between 2.66 and 2.81,and the extinction coefficient increases to a value in a range of 0.22–1.28.Visible Raman spectroscopy measurements show that all samples have distinct diamond peaks located in a range of 1331 cm-1–1333 cm-1,the content of diamond phase increases gradually as grain size increases,and the amount of trans-polyacetylene(TPA)content decreases.Meanwhile,the sp2 carbon clusters content and its full-width-at-half-maximum(FWHM)value are significantly reduced in MCD film with a grain size of 620 nm,which is beneficial to the improvement of the optical properties of the films.展开更多
A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline dia...A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHx (x = 1, 2, 3) growth species for adsorption sites.展开更多
The relationship between texture and elastic properties of chemical vapor deposition (CVD) diamond films was analyzed based on the phenomenological theory, which reveals the influence of crystalline orientation and ...The relationship between texture and elastic properties of chemical vapor deposition (CVD) diamond films was analyzed based on the phenomenological theory, which reveals the influence of crystalline orientation and texture on the residual macro-strain and macro-stress. The phenomenological calculations indicated that the difference in Young's modulus could be 15% in single diamond crystals and 5% in diamond films with homogeneously distributed strong fiber texture. The experimentally measured residual strains of free-standing CVD diamond films were in good agreement with the correspondingly calculated Young's modulus in connection with the multi-fiber textures in the films, though the difference in Young's modulus induced by texture was only around 1%. It is believed that texture should be one of the important factors influencing the residual stress and strain of CVD diamond films.展开更多
Polycrystalline diamond films have been synthesized on various substrates by hot filament CVD from the mixture gases of methane and hydrogen. The interface layers between CVD diamond films and substrates have been inv...Polycrystalline diamond films have been synthesized on various substrates by hot filament CVD from the mixture gases of methane and hydrogen. The interface layers between CVD diamond films and substrates have been investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). In addition, visible luminescence between 2.0~3.5eV of undoped and boron-doped CVD diamond films has also been studied by cathodoluminescence.展开更多
The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable den...The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.展开更多
Adherent nano diamond films were successfully deposited on glass substrate bymicrowave plasma assisted CVD method in H_2-CH_4 and Ar-CH_4 environment. Raman, AFM (Atomic ForceMicroscope), TEM (Transmission Electron Mi...Adherent nano diamond films were successfully deposited on glass substrate bymicrowave plasma assisted CVD method in H_2-CH_4 and Ar-CH_4 environment. Raman, AFM (Atomic ForceMicroscope), TEM (Transmission Electron Microscope), FTIR, and Nano Indentation techniques were usedfor characterization of the obtained nano diamond films. It was found that the average grain sizewas less than 100 nm with a surface roughness value as low as 2 nm. The nano diamond films werefound to have excellent transparency in visible and IR spectrum range, and were as hard as naturaldiamond. Experimental results were presented. Mechanisms for nano diamond film deposition werediscussed.展开更多
Hydrogen distribution and content in diamond films deposited by DC arcjetunder gas recycling mode was evaluated by nuclear reaction analysis (NRA). The films werecharacterized using scanning electron microscopy, X-ray...Hydrogen distribution and content in diamond films deposited by DC arcjetunder gas recycling mode was evaluated by nuclear reaction analysis (NRA). The films werecharacterized using scanning electron microscopy, X-ray diffraction and Raman spectrometry. The NRAresults show that the hydrogen content in diamond films was approximately 0.6% (substratetemperature 770℃), and strongly depended on the substrate temperature. It was that the hydrogencontent increased with the increase of the substrate temperature. The possibility of hydrogentrapping in the films was also discussed.展开更多
The mechanism of chemical-vapor-deposited (CVD) diamond film growth has attracted increasing attention recent years, mainly due to the fact that further technological advancement (such as obtaining high-quality films,...The mechanism of chemical-vapor-deposited (CVD) diamond film growth has attracted increasing attention recent years, mainly due to the fact that further technological advancement (such as obtaining high-quality films, controlling film growth, and heteroepitaxial growth, etc.) requires a more detailed understanding of the fundamental phenomena responsible for diamond growth.展开更多
Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low s...Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeare展开更多
Uniform diamond films are highly desirable for cutting industries, due to their high performance and long lifetime used on cutting tools. Nevertheless, they are difficult to obtain on cutting tools with complicated sh...Uniform diamond films are highly desirable for cutting industries, due to their high performance and long lifetime used on cutting tools. Nevertheless, they are difficult to obtain on cutting tools with complicated shapes, greatly limiting the applications of diamond films. In this study, a novel approach of deposition for uniform diamond films is proposed, on circular saw blades made of cemented carbide using reflectors of brass sheets. Diamond films are deposited using hot filament chemical vapor deposition(HFCVD). A novel concave structure of brass sheets is designed and fabricated, improving the distribution of temperature field, and overcoming the disadvantages of the conventional HFCVD systems. This increases the energy efficiency of use without changing the structure and increasing the cost of HFCVD. The grains are refined and the intensities of diamond peaks are strengthened obviously, which is confirmed by scanning electron microscopy and Raman spectra respectively.展开更多
The Mo substrate with Zr interlayer,namely composite substrate,was employed to solve the problem of crack formation in the freestanding diamond film deposition.Freestanding diamond films deposited on the composite sub...The Mo substrate with Zr interlayer,namely composite substrate,was employed to solve the problem of crack formation in the freestanding diamond film deposition.Freestanding diamond films deposited on the composite substrates by the direct current arc plasma jet chemical vapor deposition(CVD) method were investigated with scanning electron microscopy(SEM),X-ray photoelectron spectroscopy (XPS),X-ray diffraction(XRD),and Raman spectroscopy.In addition,the stress distribution during the large area freestanding diamond film deposition on the composite substrate was analyzed based on the finite element model ANSYS.The results reveal that Zr interlayer can be easily destroyed during the post-deposition cooling process,which is helpful for stress release and crack avoiding in diamond films.展开更多
基金This work was partially supported by the National Natural Science Foundation of China (NSFC) under Contract No. 59292800 the Science and Technology Committee of Liaoning Province.
文摘During the growth of the hot filament chemical vapor deposition (HFCVD) diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on the gas physical parameters, including the temperature, velocity and volume density of gas. It was found that, even in the case of optimized deposition parameters, the space distributions of gas parameters were heterogeneous due primarily to the thermal blockage come from the hot filaments and cryogenic pump effect arisen from the cold reactor wall. The distribution of volume density agreed well with the thermal round-flow phenomenon, one of the key obstacles to obtaining high growth rate in HFCVD process. In virtue of isothermal boundary with high temperature or adiabatic boundary condition of reactor wall, however, the thermal roundflow was profoundly reduced and as a consequence, the uniformity of gas physical parameters was considerably improved, as identified by the experimental films growth.
文摘Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron microscope (SEM) and Raman spectrum. The influence of substrate temperature on the nucleation behavior of diamond was discussed in detail and the optimized deposition condition has been obtained.
文摘The etching technique using Ce is a convenient and fast method for polishing and shaping diamond films. In this study, the influence of polishing parameters such as polishing temperature and time on the surface crystallinity and phase composition of diamond films was thoroughly investigated via the analysis of Raman spectra such as FWHM and ID/IG. Moreover, the issue on the graphitization of diamond after polishing with Ce was further researched through the detailed study of the depth distribution of Raman data including FWHM and ID/IG, and a result completely different from the hot-iron metal polished ones was obtained. The results showed that polished diamond films had considerably higher diamond content than those before polishing, and not a bit of graphitization was found in the polished ones, owing to a higher solubility of carbon in rare earth metal Ce than that in transition metals, and the original crystallinity of the films polished with Ce did not deteriorate.
基金financially supported by the National Natural Science Foundation of China (No. 51272024)the Ph.D. Programs Foundation of the Ministry of Education of China (No. 20110006110011)the Fundamental Research Funds for Central Universities (No. FRF-TP-13-035A)
文摘With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD) are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method (TLM). Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.
基金Supported by the National Natural Science Foundation of China under Grant No 11405114the Natural Science Foundation of Shanxi Province under Grant No 2015021065
文摘Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond (MCD) films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.
文摘Under optimal conditions free-standing high quality diamond films were prepared by DC arc plasma jet CVD method at a growth rate of 7-10 Pm/h. Surface and cross section morphologies of the diamond films were observed by SEM. Raman spectrometer wasused to characterize the quality of diamond films. The IR transmittivity measured by IR spectrometer is close to the theoretical value ofabout 71% in the far infrared band. The thermal conductivity measured by photothermal deflection exceeds 18 W/cm' K. <l 10> is thepreferential growth orientation of the films detected by X-ray diffractometer. As s result, the extremely high temperature of DC arc plasma jet can produce supersaturated atomic hydrogen, which played an important role in the process for the deposition of high quality diamond films.
基金This work was supported by Doctor Foundation of Hebei Education Committee Hebei Natural Science Foundation(599091 ) of China
文摘Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results.
文摘Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 10^14 cm^-2 or 10^15 cm^-2 is favourable for producing less damaged O-doDed diamond films.
基金supported by the Science and Technology Major Project of Shanxi Province,China (Grant No. 20181102013)the Fund from the “1331 Project”Engineering Research Center of Shanxi Province,China (Grant No. PT201801)。
文摘Nano-diamond particles are co-deposited on Ti substrates with metal(Ti/Ni) nanoparticles(NPs) by the electrophoretic deposition(EPD) method combined with a furnace annealing at 800℃ under N_(2) atmosphere. Modifications of structural and electron field emission(EFE) properties of the metal-doped films are investigated with different metal NPs concentrations. Our results show that the surface characteristics and EFE performances of the samples are first enhanced and then reduced with metal NPs concentration increasing. Both the Ti-doped and Ni-doped nano-diamond composite films exhibit optimal EFE and microstructural performances when the doping quantity is 5 mg. Remarkably enhanced EFE properties with a low turn-on field of 1.38 V/μm and a high current density of 1.32 mA/cm^(2) at an applied field of 2.94 V/μm are achieved for Ni-doped nano-diamond films, and are superior to those for Ti-doped ones. The enhancement of the EFE properties for the Ti-doped films results from the formation of the TiC-network after annealing. However, the doping of electron-rich Ni NPs and formation of high conductive graphitic phase are considered to be the factor, which results in marvelous EFE properties for these Ni-doped nano-diamond films.
基金Project supported by the Key Project of the National Natural Science Foundation of China(Grant No.U1809210)the National Natural Science Foundation of China(Grant Nos.50972129 and 50602039)+4 种基金the International Science Technology Cooperation Program of China(Grant No.2014DFR51160)the National Key Research and Development Program of China(Grant No.2016YFE0133200)the European Union’s Horizon 2020 Research and Innovation Staff Exchange(RISE)Scheme(Grant No.734578)the Belt and Road International Cooperation Project from Key Research and Development Program of Zhejiang Province,China(Grant No.2018C04021)the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LQ15A040004 and LY18E020013)
文摘Microcrystalline diamond(MCD)films with different grain sizes ranging from 160 nm to 2200 nm are prepared by using a hot filament chemical vapor deposition(HFCVD)system,and the influences of grain size and structural features on optical properties are investigated.The results show that the film with grain size in a range of 160 nm–310 nm exhibits a higher refractive index in a range of(2.77–2.92).With grain size increasing to 620±300 nm,the refractive index shows a value between 2.39 and 2.47,approaching to that of natural diamond(2.37–2.55),and a lower extinction coefficient value between 0.08 and 0.77.When the grain size increases to 2200 nm,the value of refractive index increases to a value between 2.66 and 2.81,and the extinction coefficient increases to a value in a range of 0.22–1.28.Visible Raman spectroscopy measurements show that all samples have distinct diamond peaks located in a range of 1331 cm-1–1333 cm-1,the content of diamond phase increases gradually as grain size increases,and the amount of trans-polyacetylene(TPA)content decreases.Meanwhile,the sp2 carbon clusters content and its full-width-at-half-maximum(FWHM)value are significantly reduced in MCD film with a grain size of 620 nm,which is beneficial to the improvement of the optical properties of the films.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10874021)Natural Science Foundation of Educational Department of Jiangsu Province of China (Grant No. 06kja43014)
文摘A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHx (x = 1, 2, 3) growth species for adsorption sites.
基金This work was financially supported by the National Natural Science Foundation of China (No.50372007).
文摘The relationship between texture and elastic properties of chemical vapor deposition (CVD) diamond films was analyzed based on the phenomenological theory, which reveals the influence of crystalline orientation and texture on the residual macro-strain and macro-stress. The phenomenological calculations indicated that the difference in Young's modulus could be 15% in single diamond crystals and 5% in diamond films with homogeneously distributed strong fiber texture. The experimentally measured residual strains of free-standing CVD diamond films were in good agreement with the correspondingly calculated Young's modulus in connection with the multi-fiber textures in the films, though the difference in Young's modulus induced by texture was only around 1%. It is believed that texture should be one of the important factors influencing the residual stress and strain of CVD diamond films.
基金This work is supported by the National Natural Science Foundation of China.
文摘Polycrystalline diamond films have been synthesized on various substrates by hot filament CVD from the mixture gases of methane and hydrogen. The interface layers between CVD diamond films and substrates have been investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). In addition, visible luminescence between 2.0~3.5eV of undoped and boron-doped CVD diamond films has also been studied by cathodoluminescence.
文摘The direct deposition of diamond films on copper substrate has been suffered fromadhesion problems due to the mismatch of the thermal expansion coefficients of diamond andcopper. In this paper nuclei with valuable density were directly introduced thirough a submicrondiamond powder layer. The diamond grits partially were buried in the copper substrate leadingto better adhesion. Another method with nickel intermediate layer for enhancing the adhesionwas studied here in detail. It was suggested that Cu-Ni eutectic between the copper substrate andNi interlayer might contribute to the adhesion improvement. The quality of the diamond filmsdeposited wlth rnckel interlayer was investigated by scanning electron microscopy and Ramanspectroscopy.
基金This work was financially supported by the National "863" Project of China (No.863-715-Z38-03).
文摘Adherent nano diamond films were successfully deposited on glass substrate bymicrowave plasma assisted CVD method in H_2-CH_4 and Ar-CH_4 environment. Raman, AFM (Atomic ForceMicroscope), TEM (Transmission Electron Microscope), FTIR, and Nano Indentation techniques were usedfor characterization of the obtained nano diamond films. It was found that the average grain sizewas less than 100 nm with a surface roughness value as low as 2 nm. The nano diamond films werefound to have excellent transparency in visible and IR spectrum range, and were as hard as naturaldiamond. Experimental results were presented. Mechanisms for nano diamond film deposition werediscussed.
文摘Hydrogen distribution and content in diamond films deposited by DC arcjetunder gas recycling mode was evaluated by nuclear reaction analysis (NRA). The films werecharacterized using scanning electron microscopy, X-ray diffraction and Raman spectrometry. The NRAresults show that the hydrogen content in diamond films was approximately 0.6% (substratetemperature 770℃), and strongly depended on the substrate temperature. It was that the hydrogencontent increased with the increase of the substrate temperature. The possibility of hydrogentrapping in the films was also discussed.
文摘The mechanism of chemical-vapor-deposited (CVD) diamond film growth has attracted increasing attention recent years, mainly due to the fact that further technological advancement (such as obtaining high-quality films, controlling film growth, and heteroepitaxial growth, etc.) requires a more detailed understanding of the fundamental phenomena responsible for diamond growth.
基金The project supported by the ChenGuang project of the Wuhan government (No. 20025001014)
文摘Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeare
基金financial support from the Fundamental Research Funds for the Central Universities(DUT16QY46)
文摘Uniform diamond films are highly desirable for cutting industries, due to their high performance and long lifetime used on cutting tools. Nevertheless, they are difficult to obtain on cutting tools with complicated shapes, greatly limiting the applications of diamond films. In this study, a novel approach of deposition for uniform diamond films is proposed, on circular saw blades made of cemented carbide using reflectors of brass sheets. Diamond films are deposited using hot filament chemical vapor deposition(HFCVD). A novel concave structure of brass sheets is designed and fabricated, improving the distribution of temperature field, and overcoming the disadvantages of the conventional HFCVD systems. This increases the energy efficiency of use without changing the structure and increasing the cost of HFCVD. The grains are refined and the intensities of diamond peaks are strengthened obviously, which is confirmed by scanning electron microscopy and Raman spectra respectively.
基金supported by the National Natural Science Foundation of China(No.50471090)
文摘The Mo substrate with Zr interlayer,namely composite substrate,was employed to solve the problem of crack formation in the freestanding diamond film deposition.Freestanding diamond films deposited on the composite substrates by the direct current arc plasma jet chemical vapor deposition(CVD) method were investigated with scanning electron microscopy(SEM),X-ray photoelectron spectroscopy (XPS),X-ray diffraction(XRD),and Raman spectroscopy.In addition,the stress distribution during the large area freestanding diamond film deposition on the composite substrate was analyzed based on the finite element model ANSYS.The results reveal that Zr interlayer can be easily destroyed during the post-deposition cooling process,which is helpful for stress release and crack avoiding in diamond films.