The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical ...The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical properties.The resistivity and electron mobility–lifetime product of high resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT1 and low resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT2 were tested respectively.Their deep-level defects were identified by thermally stimulated current（TSC）spectroscopy and thermoelectric effect spectroscopy（TEES）respectively.Then the trap-related parameters were characterized by the simultaneous multiple peak analysis（SIMPA）method.The deep donor level（EDD/dominating dark current was calculated by the relationship between dark current and temperature.The Fermi-level was characterized by current–voltage measurements of temperature dependence.The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy.The results show the traps concentration and capture cross section of CZT1 are lower than CZT2,so its electron mobility–lifetime product is greater than CZT2.The Fermi-level of CZT1 is closer to the middle gap than CZT2.The degree of Fermi-level pinned by EDDof CZT1 is larger than CZT2.It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges.展开更多
The effect of heating treatment on the trap level distribution in polyamide 66 film electret is studied by thermally stimulated depolarization current （TSDC） technique. For annealed polyamide 66, there are three tra...The effect of heating treatment on the trap level distribution in polyamide 66 film electret is studied by thermally stimulated depolarization current （TSDC） technique. For annealed polyamide 66, there are three trap levels that respectively originate from space charge trapped in amorphous phase, interphase and crystalline phase. There is one peak that originates from space charge trapped in amorphous phase for quenched one. Using multi-point method to fit the experimental curves, the detrapping current peaks can be separated and the trap depth is obtained. The shallower trap levels trapped in amorphous phase and interphase are obviously close to the deeper trap level trapped in crystalline phase for annealed polyamide 66 as the polarization temperature increases, while the trap level distribution remains unaffected by polarization temperature for quenched one.展开更多
基金supported by the National Natural Science Foundation of China(No.51502234)the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China(No.15JS040)
文摘The deep-level defects of Cd Zn Te（CZT）crystals grown by the modified vertical Bridgman（MVB）method act as trapping centers or recombination centers in the band gap,which have significant effects on its electrical properties.The resistivity and electron mobility–lifetime product of high resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT1 and low resistivity Cd（0.9）Zn（0.1）Te wafer marked CZT2 were tested respectively.Their deep-level defects were identified by thermally stimulated current（TSC）spectroscopy and thermoelectric effect spectroscopy（TEES）respectively.Then the trap-related parameters were characterized by the simultaneous multiple peak analysis（SIMPA）method.The deep donor level（EDD/dominating dark current was calculated by the relationship between dark current and temperature.The Fermi-level was characterized by current–voltage measurements of temperature dependence.The width of the band gap was characterized by ultraviolet-visible-infrared transmittance spectroscopy.The results show the traps concentration and capture cross section of CZT1 are lower than CZT2,so its electron mobility–lifetime product is greater than CZT2.The Fermi-level of CZT1 is closer to the middle gap than CZT2.The degree of Fermi-level pinned by EDDof CZT1 is larger than CZT2.It can be concluded that the resistivity of CZT crystals increases as the degree of Fermi-level pinned near the middle gap by the deep donor level enlarges.
基金Project supported by the National Natural Science Foundation of China(Grant No.20974108)the Natural Science Foundation of Anhui Province,China(Grant No.1308085QB40)the Fundamental Research Funds for the Central Universities of Ministry of Education of China(Grant Nos.2013HGQC0016 and 2011HGBZ1323)
文摘The effect of heating treatment on the trap level distribution in polyamide 66 film electret is studied by thermally stimulated depolarization current （TSDC） technique. For annealed polyamide 66, there are three trap levels that respectively originate from space charge trapped in amorphous phase, interphase and crystalline phase. There is one peak that originates from space charge trapped in amorphous phase for quenched one. Using multi-point method to fit the experimental curves, the detrapping current peaks can be separated and the trap depth is obtained. The shallower trap levels trapped in amorphous phase and interphase are obviously close to the deeper trap level trapped in crystalline phase for annealed polyamide 66 as the polarization temperature increases, while the trap level distribution remains unaffected by polarization temperature for quenched one.
