当前我国埋地管道的需求与日俱增,针对埋地管道输送介质种类繁多、情况复杂、易受侵蚀的现象,特对可用于管道防腐的中密度刚性喷涂聚脲材料进行了制备和研究,并按照BS EN 15655和BS EN 15189相关测试方法对其耐冲击性能、耐腐蚀性能、...当前我国埋地管道的需求与日俱增,针对埋地管道输送介质种类繁多、情况复杂、易受侵蚀的现象,特对可用于管道防腐的中密度刚性喷涂聚脲材料进行了制备和研究,并按照BS EN 15655和BS EN 15189相关测试方法对其耐冲击性能、耐腐蚀性能、电绝缘性、耐磨性、抗椭圆性、光致老化性能等相关性能进行了测试和表征。试验结果表明:100 cm×5 kg冲击作用下涂层无损坏、无漏点;耐水、酸、碱、盐介质后质量变化率低于2%;0.1 M氯化钠溶液浸泡100天后绝缘电阻≥2.1×10^(11)Ω·m^(2);在DN 200管段水平倾斜测试50 000个周期后,涂膜磨损深度平均值仅为0.071 mm;管段在大气中暴露6个月后,涂层无起泡、裂纹、脱落,附着力高达23.52 MPa。中密度刚性聚脲在埋地管道应用方面表现优异,具有高硬度、高强度、高耐磨、高耐冲,有一定伸长率,与基材有良好的附着力,还有优异的耐化学介质性、耐盐雾性、电绝缘性、抗椭圆性和抗光致老化性。展开更多
With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most pro...With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.展开更多
A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth（TGG） under high pressure and high temperature（HPHT）. Because of differences in addit...A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth（TGG） under high pressure and high temperature（HPHT）. Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra（XPS） of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm^2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10^5 Ω·cm and 76.300 cmΩ2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.展开更多
基金financially supported by the National Natural Science Foundation of China (No. 51272024)the Ph.D. Programs Foundation of the Ministry of Education of China (No. 20110006110011)the Fundamental Research Funds for Central Universities (No. FRF-TP-13-035A)
文摘With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.
基金Project supported by the National Natural Science Foundation of China(Grant No.11604246)China Postdoctor Science Foundation(Grant No.2016M592714)+2 种基金Professional Practice Demonstration Base for Professional Degree Graduate in Material Engineering of Henan Polytechnic University,China(Grant No.2016YJD03)the Education Department of Henan Province,China(Grant Nos.12A430010 and 17A430020)the Fundamental Research Funds for the Universities of Henan Province,China(Grant No.NSFRF140110)
文摘A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth（TGG） under high pressure and high temperature（HPHT）. Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra（XPS） of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 Ω·cm and 760.870 cm^2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10^5 Ω·cm and 76.300 cmΩ2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.
