Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are in- troduced in this article, including an analysis of the advantages of the device owing to the ...Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are in- troduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.展开更多
A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection ...A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.展开更多
High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The mo...High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.展开更多
More than 1 000 tons of saw diamond grits were consumed worldwide in 2007.Even with such a mature industry,there are still major improvements possible in developing new grits.The DiaCan<sup>TM</sup> techno...More than 1 000 tons of saw diamond grits were consumed worldwide in 2007.Even with such a mature industry,there are still major improvements possible in developing new grits.The DiaCan<sup>TM</sup> technology with patterned diamond seeding can boost the production yield of coarse mesh diamonds（e.g. 30/40）.Moreover,the DiaMind crystals formed contain a visible core.This diamond-in-diamond architecture allows self-sharpening during sawing application.Furthermore,a revolutionary polycrystalline diamond superabrasive with cubical shape was fabricated to further increase the sawing efficiency and tool longevity.Such DiaCube<sup>TM</sup> polygrits were made tools by brazing them on pearls of wire saws and on the surface of turbo grinders. The pros and cons of major designs of high-pressure equipment for diamond synthesis were discussed with the recommendation to combine the merits of belt apparatus and cubic press.This tooling synergism may increase diamond yield at reduced cost for massive production of saw grits. In 1997 Sung Chien-Min filed a series US patents that described the art of making patterned diamond tools with diamond grits forming an array in three dimensions.He also made the debut of the world’ s first brazing tools with patterned diamond distribution at the stone exhibition in Verona in 1998（also in Nuremberg in 1999）.The patterned diamond saws were introduced by Korean companies in 2005 with the demonstration of increased cutting speeds and prolonged tool lives.展开更多
Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished p...Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.展开更多
基金financially supported by the National Key Research and Development Program of China (No.2018YFB0406501)the Beijing Municipal Science and Technology Commission (No. Z181100004418009)the National Natural Science Foundation of China (No.51702313)
文摘Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are in- troduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.
基金Project supported by the National Natural Science Foundation of China (Grant No 10675074)
文摘A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51001042)the Doctor Foundation of the Henan Polytechnic University,China (Grant No. 2010-32)
文摘High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.
文摘More than 1 000 tons of saw diamond grits were consumed worldwide in 2007.Even with such a mature industry,there are still major improvements possible in developing new grits.The DiaCan<sup>TM</sup> technology with patterned diamond seeding can boost the production yield of coarse mesh diamonds（e.g. 30/40）.Moreover,the DiaMind crystals formed contain a visible core.This diamond-in-diamond architecture allows self-sharpening during sawing application.Furthermore,a revolutionary polycrystalline diamond superabrasive with cubical shape was fabricated to further increase the sawing efficiency and tool longevity.Such DiaCube<sup>TM</sup> polygrits were made tools by brazing them on pearls of wire saws and on the surface of turbo grinders. The pros and cons of major designs of high-pressure equipment for diamond synthesis were discussed with the recommendation to combine the merits of belt apparatus and cubic press.This tooling synergism may increase diamond yield at reduced cost for massive production of saw grits. In 1997 Sung Chien-Min filed a series US patents that described the art of making patterned diamond tools with diamond grits forming an array in three dimensions.He also made the debut of the world’ s first brazing tools with patterned diamond distribution at the stone exhibition in Verona in 1998（also in Nuremberg in 1999）.The patterned diamond saws were introduced by Korean companies in 2005 with the demonstration of increased cutting speeds and prolonged tool lives.
基金supported by the Research Fund of Hubei Provincial Department of Education of China (No.Q20081505)
文摘Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.
