CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent gr...CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent growth period is very critical for successful development of CVD diamond based technologies. There are many methods of enhancing diamond nucleation on foreign substrates-ultrasonic treatment with diamond seed suspension being the best among them. A combination of ultrasonic seeding (US) technique with prior treatment (PT) of the substrate under CVD diamond growth conditions for brief period of time, has found to be very effective in enhancing the diamond nucleation during CVD growth—together they are known as NNP. But successive usage of the same seeding suspension up to ten cycles deteriorates the seeding efficiency. 6th seeding cycle onwards the silicon substrates are barely get covered by diamond crystallites. Five different diamond micron grits were used for seeding the silicon substrates and it is observed that US with the sub-micron particles (0.25 μm) is very effective in efficient nucleation of PCD on Si substrates. PT of the substrate somewhat negates the effect of successive use of the same seeding slurry but it is best to avoid recycling of the same seeding suspension using micron size diamond grits.展开更多
In this paper, the diamond epitaxial growth mechanism has been studied in detail by employing several types of diamond as a seed in a catalyst-graphite system under high pressure and high temperature （HPHT） conditio...In this paper, the diamond epitaxial growth mechanism has been studied in detail by employing several types of diamond as a seed in a catalyst-graphite system under high pressure and high temperature （HPHT） conditions. We find that the diamond nucleation, growth rate, crystal orientation, and morphology are significantly influenced by the original seeds. The smooth surfaces of seeds are beneficial for the fabrication of high-quality diamond. Our results reveal that the diamond morphology is mainly determined by the original shape of seeds in the early growth stage, but it has an adjustment process during the growth and leads to well symmetry. Additionally, we have also established the growth model for the twinned diamond grown on several seeds, and proposed the possible growth processes by tracking the particular shapes of seeds before and after treatment under HPHT conditions. These results suggest that the shape-controlled synthesis of diamond with well morphology can be realized by employing certain suitable diamond seeds. This work is expected to play an important role in the preparation of trustworthy diamond-based electronic and photonic devices.展开更多
文摘CVD growth of uniform conformal polycrystalline diamond (PCD) coatings over complex three dimensional structures is very important material processing technique. It has been found that the nucleation and subsequent growth period is very critical for successful development of CVD diamond based technologies. There are many methods of enhancing diamond nucleation on foreign substrates-ultrasonic treatment with diamond seed suspension being the best among them. A combination of ultrasonic seeding (US) technique with prior treatment (PT) of the substrate under CVD diamond growth conditions for brief period of time, has found to be very effective in enhancing the diamond nucleation during CVD growth—together they are known as NNP. But successive usage of the same seeding suspension up to ten cycles deteriorates the seeding efficiency. 6th seeding cycle onwards the silicon substrates are barely get covered by diamond crystallites. Five different diamond micron grits were used for seeding the silicon substrates and it is observed that US with the sub-micron particles (0.25 μm) is very effective in efficient nucleation of PCD on Si substrates. PT of the substrate somewhat negates the effect of successive use of the same seeding slurry but it is best to avoid recycling of the same seeding suspension using micron size diamond grits.
基金Project supported by the National Natural Science Foundation of China (Grant No. 51172089)the Graduate Innovation Fund of Jilin University (Grant No. 20111022)
文摘In this paper, the diamond epitaxial growth mechanism has been studied in detail by employing several types of diamond as a seed in a catalyst-graphite system under high pressure and high temperature （HPHT） conditions. We find that the diamond nucleation, growth rate, crystal orientation, and morphology are significantly influenced by the original seeds. The smooth surfaces of seeds are beneficial for the fabrication of high-quality diamond. Our results reveal that the diamond morphology is mainly determined by the original shape of seeds in the early growth stage, but it has an adjustment process during the growth and leads to well symmetry. Additionally, we have also established the growth model for the twinned diamond grown on several seeds, and proposed the possible growth processes by tracking the particular shapes of seeds before and after treatment under HPHT conditions. These results suggest that the shape-controlled synthesis of diamond with well morphology can be realized by employing certain suitable diamond seeds. This work is expected to play an important role in the preparation of trustworthy diamond-based electronic and photonic devices.
