Solid-state impedance spectroscopy studies of dielectric properties and relaxation processes in Na_(2)O–V_(2)O_(5)–Nb_(2)O_(5)–P_(2)O_(5) glass

Solid-state impedance spectroscopy(SS-IS)was used to investigate the influence of structural modifications resulting from the addition of Nb2O5 on the dielectric properties and relaxation processes in the quaternary mixed glass former(MGF)system 35Na_(2)O–10V_(2)O_(5)–(55-x)P_(2)O_(5)–xNb_(2)O_(5)(x=0–40,mol%).The dielectric parameters,including the dielectric strength and dielectric loss,are determined from the frequency and temperature-dependent complex permittivity data,revealing a significant dependence on the Nb2O5 content.The transition from a predominantly phosphate glass network(x<10,region I)to a mixed niobate–phosphate glass net-work(10≤x≤20,region II)leads to an increase in the dielectric parameters,which correlates with the observed trend in the direct-cur-rent(DC)conductivity.In the predominantly niobate network(x≥25,region III),the highly polarizable nature of Nb5+ions leads to a fur-ther increase in the dielectric permittivity and dielectric strength.This is particularly evident in Nb-40 glass-ceramic,which contains Na_(13)Nb_(35)O_(94) crystalline phase with a tungsten bronze structure and exhibits the highest dielectric permittivity of 61.81 and the lowest loss factor of 0.032 at 303 K and 10 kHz.The relaxation studies,analyzed through modulus formalism and complex impedance data,show that DC conductivity and relaxation processes are governed by the same mechanism,attributed to ionic conductivity.In contrast to glasses with a single peak in frequency dependence of imaginary part of electrical modulus,M″(ω),Nb-40 glass-ceramic exhibits two distinct contributions with similar relaxation times.The high-frequency peak indicates bulk ionic conductivity,while the additional low-fre-quency peak is associated with the grain boundary effect,confirmed by the electrical equivalent circuit(EEC)modelling.The scaling characteristics of permittivity and conductivity spectra,along with the electrical modulus,validate time-temperature superposition and demonstrate a strong correlation with composition and modification of the glass structure upon Nb_(2)O_(5) incorporation.

Influences of divalent ion substitution on the magnetic and dielectric properties of W-type barium ferrite

Saturation magnetization,magneto-crystalline anisotropy field,and dielectric properties are closely related to microwave devices applied at different frequencies.For regulating the magnetic and dielectric properties of W-type barium ferrites,single-phase BaMe_(2)Fe_(16)O_(27)(Me=Fe,Mn,Zn,Ni,Co) with different Me ions were synthesized by the high-temperature solid-state method.The saturation magnetization(Ms) range from 47.77 emu/g to 95.34 emu/g and the magnetic anisotropy field(H_a) range from 10700.60 Oe(1 Oe=79.5775 A·m^(-1)) to 13739.57 Oe,depending on the type of cation substitution in the hexagonal lattice.The dielectric permittivity and dielectric loss decrease with increasing frequency of the AC electric field in the low-frequency region,while they almost remain constant in the high-frequency region.The charac teristics of easy regulation and preparation make it a potential candidate for use in microwave device applications.

Fatigue Resistance of RCA Modified Asphalt Based on Dielectric Properties

In order to study the anti-fatigue performance of RCA modified asphalt (RMA),the performance of RMA and 90#matrix asphalt with different modifier content were measured by asphalt penetration,ductility,softening point,Brookfield viscosity,rheological index,infrared spectrum and dielectric constant test.This paper discusses the changes of asphalt basic indexes,fatigue properties and asphalt components based on dielectric properties under different modifier contents,and analyzes the grey correlation degree between components and asphalt pavement performance indexes.The results show that the optimum content of RCA modifier is 16.7%of the asphalt quality according to the penetration,ductility,softening point,Brockfield viscosity,viscosity temperature curve and fatigue life.In the phase angle-strain curve,there is disorder in the latter part of the curve.According to the strain (ε_(d)) corresponding to the disorder point,a new fatigue failure criterion is proposed and proved.Based on the new asphalt fatigue failure criterion,the fatigue prediction model of asphalt mixture is improved,and the fatigue life predicted by the improved fatigue model is compared with the fatigue life obtained by four-point bending fatigue test.The results show that the proposed new asphalt fatigue failure criterion is reasonable,and the fatigue life predicted by the improved asphalt mixture fatigue prediction model is accurate.The research method of classifying asphalt components based on dielectric properties is simple and effective,and the components have a high correlation with the road performance of base asphalt and modified asphalt.

Electromagnetic wave absorption and mechanical properties of SiC nanowire/low-melting-point glass composites sintered at 580°C in air

Si C nanowires are excellent high-temperature electromagnetic wave (EMW) absorbing materials. However, their polymer matrix composites are difficult to work at temperatures above 300℃, while their ceramic matrix composites must be prepared above 1000℃ in an inert atmosphere. Thus, for addressing the abovementioned problems, SiC/low-melting-point glass composites were well designed and prepared at 580℃ in an air atmosphere. Based on the X-ray diffraction results, SiC nanowires were not oxidized during air atmosphere sintering because of the low sintering temperature. Additionally, SiC nanowires were uniformly distributed in the glass matrix material. The composites exhibited good mechanical and EMW absorption properties. As the filling ratio of SiC nanowires increased from 5wt%to 20wt%, the Vickers hardness and flexural strength of the composite reached HV 564 and 213 MPa, which were improved by 27.7%and 72.8%, respectively, compared with the low-melting-point glass. Meanwhile, the dielectric loss and EMW absorption ability of SiC nanowires at 8.2–12.4 GHz were also gradually improved. The dielectric loss ability of low-melting-point glass was close to 0. However, when the filling ratio of SiC nanowires was 20wt%, the composite showed a minimum reflection loss (RL) of-20.2 dB and an effective absorption (RL≤-10 dB) bandwidth of2.3 GHz at an absorber layer thickness of 2.3 mm. The synergistic effect of polarization loss and conductivity loss in SiC nanowires was responsible for this improvement.

Structural evolution-enabled BiFeO3 modulated by strontium doping with enhanced dielectric,optical and superparamagnetic properties by a modified sol-gel method

Multiferroic(BFO)nanoparticles doped with strontium with the general formula Bi1-xSrx FeO3(x=0,0.3,0.5,0.7)were synthesized using a modified sol-gel auto-combustion process.The structural,electrical,optical,and magnetic properties of the samples are discussed.The structural analysis,carried out using the x-ray powder diffraction technique,shows a structural transition from rhombohedral(R-3c)to cubic(Pm-3m)for the doping amount of strontium(Sr)equal to x=0.3.Morphological analysis of the prepared samples were carried out using scanning electron microscopy(SEM).Frequency-dependent dielectric constant and ac conductivity were studied.The doped samples,with improved dielectric properties,can be used to fabricate different optoelectronic devices.Strong dielectric dispersion and broad relaxation were exhibited by all the samples.Cole–Cole plots were employed as an effective tool to study the dispersion parameters,namely,the optical dielectric constant,static dielectric constant,relaxation time,and spreading factor.The activation energy was calculated from the relaxation peaks and Cole–Cole plots,which were found to be compatible with each other.The bandgap of the samples was calculated using diffuse reflectance spectral(DRS)analysis.Sharp and strong photoluminescence in the IR region was observed in the samples,similar to ZnO,which was reported for the first time.Room-temperature and low-temperature magnetization studies point towards the superparamagnetic nature of the samples,with an improvement in magnetic properties with doping.The antiferromagnetic behavior of bulk bismuth ferrite transforms to superparamagnetic in nature for both pure and Sr-substituted bismuth ferrite nanoparticles due to the close dimensions of crystallite size with magnetic domains leading to the break-down of the frustrated spin cycloidal moment.

Effects of Conductive Carbon Black on Thermal and Electrical Properties of Barium Titanate/Polyvinylidene Fluoride Composites for Road Application

In the field of roads,due to the effect of vehicle loads,piezoelectric materials under the road surface can convert mechanical vibration into electrical energy,which can be further used in road facilities such as traffic signals and street lamps.The barium titanate/polyvinylidene fluoride(BaTiO_(3)/PVDF)composite,the most common hybrid ceramic-polymer system,was widely used in various fields because the composite combines the good dielectric property of ceramic materials with the good flexibility of PVDF material.Previous studies have found that conductive particles can further improve the dielectric and piezoelectric properties of other composites.However,few studies have investigated the effect of conductive carbon black on the dielectric and piezoelectric properties of BaTiO_(3)/PVDF composites.In this study,BaTiO_(3)/PVDF/conductive carbon black composites were prepared with various conductive carbon black contents based on the optimum ratio of BaTiO_(3)to PVDF.The effects of conductive carbon black content on the morphologies,thermal performance,conductivities,dielectric properties,and piezoelectric properties of the BaTiO_(3)/PVDF/conductive carbon black composites were then investigated.The addition of conductive carbon black greatly enhances the conductivities,dielectric properties,and piezoelectric properties of the BaTiO_(3)/PVDF/conductive carbon black composites,especially when the carbon black content is 0.8%by weight of PVDF.Additionally,the conductive carbon black does not have an obvious effect on the morphologies and thermal stabilities of BaTiO_(3)/PVDF/conductive carbon black composites.

Wideband frequency-dependent dielectric properties of rat tissues exposed to low-intensity focused ultrasound in the microwave frequency range

Tissue dielectric properties can vary upon the incident of an acoustic wave.The goal of this study is to quantify this change due to the acoustoelectric effect(AE),and to obtain the frequency-dependent dielectric properties of tissues exposed to low-intensity focused ultrasound(LIFU).The dielectric properties of the blood,brain,chest muscle,heart,kidney,leg muscle,liver,lung,pancreas,and spleen of rats were measured by an open-ended coaxial probe method.The acoustic intensity of LIFU focus was 2.97 MPa(67.6 W/cm^(2)),3.95 MPa(120 W/cm^(2)),and 5.17 MPa(204 W/cm^(2)),respectively,and the measurement frequency band was 0.1–7.08 GHz.The measurement results show that with the LIFU modulation,the conductivity and dielectric constant decreased in the high-frequency band,and on the contrary,they increased in the lowfrequency band,and the larger the acoustic intensity was,the more obvious the phenomenon was.This work contributes to a better understanding of the mechanisms by which ultrasound acts on the dielectric properties of biological tissues.It is expected that the findings from this study will provide a basis that the response of tissue to LIFU modulation can be monitored by noninvasive techniques such as microwave-induced thermoacoustic imaging(MTI)and microwave imaging,present a new idea for improving the endogenous contrast between different biological tissues in MTI and acoustoelectric imaging,and possibly lead to the development of a new imaging method based on the relaxation time of tissue after LIFU modulation.

Boron nitride silicone rubber composite foam with low dielectric and high thermal conductivity

Silicone rubber(SR)is widely used in the field of electronic packaging because of its low dielectric properties.In this work,the porosity of the SR was improved,and the dielectric constant of the SR foam was reduced by adding expanded microspheres(EM).Then,the thermal conductivity of the system was improved by combining the modified boron nitride(f-BN).The results showed that after the f-BN was added,the dielectric constant and dielectric loss were much lower than those of pure SR.Micron-sized modified boron nitride(f-mBN)improved the dielectric and thermal conductivity of the SR foam better than that of nano-sized modified boron nitride(f-nBN),but f-nBN improved the volume resistivity,tensile strength,and thermal stability of the SR better than f-mBN.When the mass ratio of f-mBN and fnBN is 2:1,the thermal conductivity of the SR foam reaches the maximum value of 0.808 W·m^(-1)·K^(-1),which is 6.5 times that before the addition.The heat release rate and fire growth index are the lowest,and the improvement in flame retardancy is mainly attributed to the high thermal stability and physical barrier of f-BN.

Effect of substitution group on dielectric properties of 4H-pyrano [3,2-c] quinoline derivatives thin films

The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-（3-phenoxyphenyl）-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile（Ph-HPQ） and 2-amino-4-（2-chlorophenyl）-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile（Ch-HPQ） thin films were determined in the frequency range of 0.5 k Hz–5 MHz and the temperature range of 290–443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping（CBH） mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.

Dielectric and piezoelectric properties of(Li,Ce) modified NaBi_5Ti_5O_(18) composite ceramics

Nominal （Li0.5Ce0.5）x（Na0.5Bi0.5）（1-x）Na0.5Bi4.5Ti5O18 composite ceramics were fabricated using conventional solid-state reaction method. The coexistence of bismuth layer-structured phase and perovskite phase was determined in these ceramics using XRD technique. At room temperature, the x=0.11 sample showed the largest piezoelectric constant, d33, of about 26.5 pC/N and the largest electromechanical coupling factor, kt, of about 30%. Even after annealing at 500 ℃, the value of d33 was still about 19 pC/N, in x=0.08-0.11 samples. Moreover these composite ceramics showed low temperature coefficients of dielectric constant and high electrical resistivity in the temperature region of 450-550 ℃. These results indicated that （Li, Ce） modified NaBi5Ti5O18 composite ceramics were promising piezoelectric materials for high-temperature applications.

Influence of Sb_2O_3 doping on the properties of KBT-NBT-BT lead-free piezoelectric ceramics

0.144（K0.5Bi0.5）TiO3-0.85（Na0.5Bi0.5）TiO3-0.006BaTiO3（KBT-NBT-BT） lead-free piezoelectric ceramics were prepared using a conventional solid state method.The influence of Sb2O3 doping on the crystal phase,surface microstructure and properties of the KBT-NBT-BT lead-free piezoelectric ceramics were investigated using X-ray diffraction（XRD）,scanning electron microscope（SEM） and other analytical methods.The results show that all compositions are of pure perovskite structure solid states.Sb2O3 doping does not influence the microstructure of KBT-NBT-BT lead-free piezoelectric ceramics obviously in the Sb2O3 doping range of 0.1-0.5 wt.%.Sb2O3 functions as a donor when doped small amount,while functions as a acceptor when doped large amount.The piezoelectric strain constant（d33） increases first and then decreases;the dielectric constant（ε33^T/ε0） and the dielectric loss（tanδ） decrease continuously when the amount of Sb2O3 dopant increases.When the doping amount of Sb2O3 is 0.1 wt.%,the KBT-NBT-BT piezoelectric ceramics with good comprehensive properties are obtained,whose d33,ε33^T/ε0 and tanδ are 147 pC/N,1510 and 4.2%,respectively.

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate（BTO） thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition（PAD） technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ 〈 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

Dopant Behaviours of Sm_2O_3 on Microstructure and Properties of Barium Zirconium Titanate Ceramics

The effect of Sm 2O 3 dopant on the sintering characteristics and dielectric properties of barium zirconium titanate ceramics (BaZr x Ti 1- x O 3) was investigated. It is shown that trace amount of Sm 2O 3 can greatly affect the grain growth and densification of barium zirconium titanate ceramics during sintering. At the same time, the dielectric peak at high temperature shifts to lower temperature and that at low temperature shifts to higher temperature. The two dielectric peaks overlap with each other when the Sm 2O 3 dopant content varies from 0 25% to 1%, and the maximum relative dielectric constant is greatly enhanced. These effects may be attributed to the substitution actions of the rare earth element in perovskite lattice. At the doping content of 0 75%, the dielectric constant maximum of 23570 can be obtained. By adopting some proper additives, an excellent Y5V dielective material is obtained, and the room temperature properties are as follows: relative dielectric constant ε RT ≥23,000, dielectric loss tgδ≤0 0075 and the breakdown strength under alternating field E b≥5 kV·mm -1 .

Effects of CeO_2 doping on the structure and properties of PSN-PZN-PMS-PZT piezoelectric ceramics

Quinary system piezoelectric ceramics PSN-PZN-PMS-PZT were prepared by using a two-step method. The effects of CeO2 doping on piezoelectric and dielectric properties of the system were investigated at morphotropic phase boundary （MPB）. The results reveal that the relative dielectric constant ε33^T｜ε0, the Curie temperature To, the piezoelectric constant d33, the mechanical quality factor Qm, and the electromechanical coupling coefficient Kp are changed with the increase of CeO2 content. On the other hand, the effects of CeO2 doping on the dielectric properties of PSN-PZN-PMS-PZT piezoelectric ceramics at high electric field are consistent with the change at weak electric field. The values of dielectric constant and dielectric loss are enhanced with the increasing of electric field.

Influence of particle size and temperature on the dielectric properties of CoFe_2O_4 nanoparticles

The objective of this study was to establish the dielectric properties of CoFe2O4 nanoparticles with particle sizes that varied from 28.6 to 5.8 nm. CoFe2O4 nanoparticles were synthesized using a chemical coprecipitation method. The particle sizes were calculated accord-ing to the Scherrer formula using X-ray diffraction （XRD） peaks, and the particle size distribution curves were constructed by using field-emission scanning electron microscopy （FESEM） images. The dielectric permittivity and loss tangents of the samples were determined in the frequency range of 1 kHz to 1 MHz and in the temperature range of 300 to 10 K. Both the dielectric permittivity and the loss tangent were found to decrease with increasing frequency and decreasing temperature. For the smallest CoFe2O4 nanoparticle size, the dielectric per-mittivity and loss tangent exhibited their highest and lowest values, respectively. This behavior is very useful for materials used in devices that operate in the microwave or radio frequency ranges.

Effects of Sr^(2+) substitution on the structural, dielectric, and piezoelectric properties of PZT-PMN ceramics

This study described the structural, dielectric, and piezoelectric behavior of Pb1-xSrx[（Zr0.52Ti0.48）0.95（Mn1/3Nb2/3）0.05]O3 ceramics （PSZT-PMN, x=0, 0.025, 0.050, and 0.075）, prepared by a semi-wet route. X-ray diffraction, dielectric, and piezoelectric investigations were carried out to analyze the crystal structure. The relative dielectric constant and dielectric loss were both calculated as the functions of temperature. The room-temperature dielectric constant reaches a maximum for a Sr2＋-modified PZT-PMN ceramic with an x value of 0.050, which corresponds to the morphotropic phase boundary （MPB）. Raman spectroscopy studies also confirm the existence of this MPB for x=0.050. The piezoelectric strain coefficients （d33） value shows a maximum response for this composition. In addition, the phase transition temperature decreases significantly when the Sr2＋concentration increases in the PZT-PMN ceramics.

Dielectric properties of spark plasma sintering AlN-W composite ceramics

In order to develop AlN composites suitable for high average power electronic tube, AlN-W materials were prepared by spark plasma sintering. The effects of manufacture parameters on dielectric loss tangent and permittivity constant were investigated, which include powder-mixed method, milling time of high-energy ball milling, starting powder particle size, sintering temperature and holding time and adding amount of the conductive second phase. The results showed that A1N-W materials sintered at the temperature of 1700℃ holding for 5 min with 10 vol.% W showed the best dielectric loss tangent larger than 0.81 at the frequency 1 kHz-1 MHz. In addition, magnetic stirring mixed powder and lower sintering temperature led to the better propelties because of the higher porosity. The samples sintered from the starting AlN powder with smaller particle size also had the better properties.

Dielectric and Piezoelectric Properties of 0-3 PZT/PVDF Composite Doped with Polyaniline

Lead zirconate titanate （ PZT ） / polyvinylidene fluoride （PVDF） 0-3 piezoelectric composites doped with polyaniline （PANI） were obtained by hot-press method. The polarization properties of the composites were characterized by XRD and P- E hysteresis loops at room temperature. And the dielectric and piezoelectric properties were also measured. The results show that the poling of PZT could be effectively carried oat and the dielectric constant e, and dissipation tanδ increase monatonously by increasing the volume fraction of PANI in the composite. The piezoelectric constant d33, and the planar electromechanical coupling factor kp increase while the mechanical quality factor Qm decreases with the increase in the content of PANI. The d33, kp and Qm show the extremum values at 8 vol%-10 vol% PANI.

Microstructure and microwave dielectric properties of ZnO-B_2O_3 added (Ca_(0.254)Li_(0.19)Sm_(0.14))TiO_3 ceramics

The effects of ZnO-B2O3 （ZB2） on the sintering behavior and microwave dielectric properties of （Ca0.254Li0.19Sm0.14）TiO3 ceramics were investigated. The densities of the specimens reached the maximum value by adding 3 wt.% ZB2 and then decreased. The sintering temperature of the specimens was lowered from 1300 to 1100℃ without degradation of the microwave dielectric properties. The （Ca0.254Li0.19Sm0.14）TiO3＋ 3 wt.% ZB2 sintered at 1100℃ for 3 h showed good microwave dielectric properties, εr= 108.2, Qf= 6545 GHz, and rf= 6.5 ppm/℃, respectively, indicating that ZB2 was an effective sintering aid to improve the densification and microwave dielectric properties of （Ca0.254Li0.19Sm0.14）TiO3 ceramics.