The accuracy of the measured current is a preeminent parameter for Current Control based Power Converter applications to ensure genuine operation of the designed converter.The current measurement accuracy can be affec...The accuracy of the measured current is a preeminent parameter for Current Control based Power Converter applications to ensure genuine operation of the designed converter.The current measurement accuracy can be affected by several parameters which includes the type of technology used,components used for the selected technology,aging,usage,operating and environmental conditions.The effect of gain resistors and their manufacturing tolerances on differential amplifier-based buck converter current measurement is investigated in this work.The analysis mainly focused on the output voltage variation and its accuracy with respect to the change in gain resistance tolerances.The gain resistors with 5%,1%,0.5%and 0.1%manufacturing tolerances taken for the worst-case analysis and the calculated performance results are compared and verified with the simula-tion results.The Operational amplifiers(Op-Amp)for high frequency power con-verter applications must operate in a high frequency noise environment and the intended current measuring system must manage common mode noise distur-bances paired with the signal to be measured.Based on the Common Mode Rejec-tion Ratio(CMRR)the common mode voltages and noise signals will effectively getfiltered out.Lesser CMRR results in lower common mode signal rejection,resulting in poor precision and noise rejection.In differential amplifiers,the CMRR predominantly depends on gain resistors.So,the variations in Common Mode Rejection Ratio due to gain resistor tolerances also analyzed and compared with the output voltage variations.Besides the effects of resistor tolerances,this paper also examines the effect of Op-Amp offset voltage on output accuracy spe-cifically for low magnitude input currents.The obtained results from this analysis clearly shows that the gain resistors with 0.1%tolerance gives maximum accuracy with improved CMRR and accuracy at low magnitude input currents will get well improved by using Op-Amps with Low Offset voltage specifications.展开更多
Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low...Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.展开更多
Tunneling-based static random-access memory(SRAM)devices have been developed to fulfill the demands of high density and low power,and the performance of SRAMs has also been greatly promoted.However,for a long time,the...Tunneling-based static random-access memory(SRAM)devices have been developed to fulfill the demands of high density and low power,and the performance of SRAMs has also been greatly promoted.However,for a long time,there has not been a silicon based tunneling device with both high peak valley current ratio(PVCR)and practicality,which remains a gap to be filled.Based on the existing work,the current manuscript proposed the concept of a new silicon-based tunneling device,i.e.,the silicon crosscoupled gated tunneling diode(Si XTD),which is quite simple in structure and almost completely compatible with mainstream technology.With technology computer aided design(TCAD)simulations,it has been validated that this type of device not only exhibits significant negative-differential-resistance(NDR)behavior with PVCRs up to 10^(6),but also possesses reasonable process margins.Moreover,SPICE simulation showed the great potential of such devices to achieve ultralow-power tunneling-based SRAMs with standby power down to 10^(−12)W.展开更多
文摘The accuracy of the measured current is a preeminent parameter for Current Control based Power Converter applications to ensure genuine operation of the designed converter.The current measurement accuracy can be affected by several parameters which includes the type of technology used,components used for the selected technology,aging,usage,operating and environmental conditions.The effect of gain resistors and their manufacturing tolerances on differential amplifier-based buck converter current measurement is investigated in this work.The analysis mainly focused on the output voltage variation and its accuracy with respect to the change in gain resistance tolerances.The gain resistors with 5%,1%,0.5%and 0.1%manufacturing tolerances taken for the worst-case analysis and the calculated performance results are compared and verified with the simula-tion results.The Operational amplifiers(Op-Amp)for high frequency power con-verter applications must operate in a high frequency noise environment and the intended current measuring system must manage common mode noise distur-bances paired with the signal to be measured.Based on the Common Mode Rejec-tion Ratio(CMRR)the common mode voltages and noise signals will effectively getfiltered out.Lesser CMRR results in lower common mode signal rejection,resulting in poor precision and noise rejection.In differential amplifiers,the CMRR predominantly depends on gain resistors.So,the variations in Common Mode Rejection Ratio due to gain resistor tolerances also analyzed and compared with the output voltage variations.Besides the effects of resistor tolerances,this paper also examines the effect of Op-Amp offset voltage on output accuracy spe-cifically for low magnitude input currents.The obtained results from this analysis clearly shows that the gain resistors with 0.1%tolerance gives maximum accuracy with improved CMRR and accuracy at low magnitude input currents will get well improved by using Op-Amps with Low Offset voltage specifications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11604019,61574020,and 61376018)the Ministry of Science and Technology of China(Grant No.2016YFA0301300)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.2016RCGD22)
文摘Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.
基金supported by the National Key Research and Development Program of China under Grant No.2021YFB2800304.
文摘Tunneling-based static random-access memory(SRAM)devices have been developed to fulfill the demands of high density and low power,and the performance of SRAMs has also been greatly promoted.However,for a long time,there has not been a silicon based tunneling device with both high peak valley current ratio(PVCR)and practicality,which remains a gap to be filled.Based on the existing work,the current manuscript proposed the concept of a new silicon-based tunneling device,i.e.,the silicon crosscoupled gated tunneling diode(Si XTD),which is quite simple in structure and almost completely compatible with mainstream technology.With technology computer aided design(TCAD)simulations,it has been validated that this type of device not only exhibits significant negative-differential-resistance(NDR)behavior with PVCRs up to 10^(6),but also possesses reasonable process margins.Moreover,SPICE simulation showed the great potential of such devices to achieve ultralow-power tunneling-based SRAMs with standby power down to 10^(−12)W.
