We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8...We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.展开更多
Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single ph...Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single photons emitted from single In As quantum dot at 864 nm is down converted to 1552 nm by using a fiber-coupled periodically poled lithium niobate（PPLN） waveguide and a 1.95 μmm pump laser, and the frequency conversion efficiency is ~40%. The singlephoton purity of quantum dot emission is preserved during the down-conversion process, i.e., g^（（2））（0）, only 0.22 at 1552 nm.This present technique advances the Ⅲ-Ⅴ semiconductor quantum dots as a promising platform for long-distance quantum communication.展开更多
Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety...Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.展开更多
In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin...In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.展开更多
AIM: To compare the results after revision of primary vertical banded gastroplasty(Re-VBG) and conversion to sleeve gastrectomy(cS G) or gastric bypass(cR YGB).METHODS: In this retrospective single-center study, all p...AIM: To compare the results after revision of primary vertical banded gastroplasty(Re-VBG) and conversion to sleeve gastrectomy(cS G) or gastric bypass(cR YGB).METHODS: In this retrospective single-center study, all patients with a failed VBG who underwent revisional surgery were included. Medical charts were reviewed and additional postal questionnaires were sent to update follow-up. Weight loss, postoperative complications and long-term outcome were assessed. RESULTS: A total 152 patients were included in this study, of which 21 underwent Re-VBG, 16 underwent c SG and 115 patients underwent c RYGB. Sixteen patients necessitated a second revisional procedure. No patients were lost-to-follow-up. Two patients deceased during the follow-up period, 23 patients did not return the questionnaire. Main reasons for revision were dysphagia/vomiting, weight regain and insufficient weight loss. Excess weight loss(%EWL) after Re-VBG, cS G and cR YGB was, respectively, 45%, 57% and 72%. Eighteen patients(11.8%) reported postoperative complications and 27% reported long-term complaints. CONCLUSION: In terms of additional weight loss, postoperative complaints and reintervention rate, Rouxen-Y gastric bypass seems feasible as a revision for a failed VBG.展开更多
The design of multiband microstrip rectenna for radio frequency energy harvesting applications is presented in this paper. The designed antenna has good performance in the GSM-900/1800, WiFi and WLAN bands. In additio...The design of multiband microstrip rectenna for radio frequency energy harvesting applications is presented in this paper. The designed antenna has good performance in the GSM-900/1800, WiFi and WLAN bands. In addition, the rectifier circuit is designed at multi resonant frequencies to collect the largest amount of RF ambient power from different RF sources. The developed antenna is matched with the rectifier at four desired frequencies using several rectifier branches to collect the largest of RF power. The proposed rectenna is printed on FR4 substrate with modified ground plane to achieve suitable impedance bandwidth. The proposed antenna consists of elliptical radiating plane with stubs and stepped modified ground plane. The rectenna resonates at quad frequency bands at (GSM 900/1800, WiFi band and WLAN bands) with rectifier power conversion efficiency up to 56.4% at 0 dBm input power using the HSMS-2850 Schottky diode. The efficiency is more enhanced by using SMS-7630-061 Schottky diode which is characterized by a low junction capacitance and a low threshold voltage to achieve higher conversion efficiency up to 71.1% at the same 0 dBm input power for the same resonating frequency band.展开更多
A novel concept and approach to engineering carbon nanodots(CNDs)were explored to overcome the limited light absorption of CNDs in low-energy spectral regions.In this work,we constructed a novel type of supra-CND by t...A novel concept and approach to engineering carbon nanodots(CNDs)were explored to overcome the limited light absorption of CNDs in low-energy spectral regions.In this work,we constructed a novel type of supra-CND by the assembly of surface charge-confined CNDs through possible electrostatic interactions and hydrogen bonding.The resulting supra-CNDs are the first to feature a strong,well-defined absorption band in the visible to near-infrared(NIR)range and to exhibit effective NIR photothermal conversion performance with high photothermal conversion efficiency in excess of 50%.展开更多
文摘We analyze a wide-band,high-linearity down-conversion mixer for cable receptions that is implemented in 0. 35μm SiGe BiCMOS technology. The bandwidth of the RF （radio frequency） input covers the range from 1 to 1.8GHz. The measured input power at the - 1dB compression point of the mixer reaches ＋ 14.23dBm. The highest voltage conversion gain is 8. 31dB, while the lowest noise figure is 19.4dB. The power consumed is 54mW with a 5V supply. The test result of the down-conversion mixer is outlined.
基金Project supported by the National Key Technologies R&D Program of China(Grant No.2018YFA0306101)the Scientific Instrument Developing Project of Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61505196)
文摘Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single photons emitted from single In As quantum dot at 864 nm is down converted to 1552 nm by using a fiber-coupled periodically poled lithium niobate（PPLN） waveguide and a 1.95 μmm pump laser, and the frequency conversion efficiency is ~40%. The singlephoton purity of quantum dot emission is preserved during the down-conversion process, i.e., g^（（2））（0）, only 0.22 at 1552 nm.This present technique advances the Ⅲ-Ⅴ semiconductor quantum dots as a promising platform for long-distance quantum communication.
基金National Natural Science Foundation of China(12205028)Natural Science Foundation of Sichuan Province(2022NSFSC1235)Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363)。
文摘Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.
基金funded by the Key Program of the National Natural Science Foundation of China(Grant No.62035001)the International Partnership Program of Chinese Academy of Sciences(No.18123KYSB20210013)the Shanghai Science and Technology Innovation Action Plan(No.22dz208700).
文摘In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.
文摘AIM: To compare the results after revision of primary vertical banded gastroplasty(Re-VBG) and conversion to sleeve gastrectomy(cS G) or gastric bypass(cR YGB).METHODS: In this retrospective single-center study, all patients with a failed VBG who underwent revisional surgery were included. Medical charts were reviewed and additional postal questionnaires were sent to update follow-up. Weight loss, postoperative complications and long-term outcome were assessed. RESULTS: A total 152 patients were included in this study, of which 21 underwent Re-VBG, 16 underwent c SG and 115 patients underwent c RYGB. Sixteen patients necessitated a second revisional procedure. No patients were lost-to-follow-up. Two patients deceased during the follow-up period, 23 patients did not return the questionnaire. Main reasons for revision were dysphagia/vomiting, weight regain and insufficient weight loss. Excess weight loss(%EWL) after Re-VBG, cS G and cR YGB was, respectively, 45%, 57% and 72%. Eighteen patients(11.8%) reported postoperative complications and 27% reported long-term complaints. CONCLUSION: In terms of additional weight loss, postoperative complaints and reintervention rate, Rouxen-Y gastric bypass seems feasible as a revision for a failed VBG.
文摘The design of multiband microstrip rectenna for radio frequency energy harvesting applications is presented in this paper. The designed antenna has good performance in the GSM-900/1800, WiFi and WLAN bands. In addition, the rectifier circuit is designed at multi resonant frequencies to collect the largest amount of RF ambient power from different RF sources. The developed antenna is matched with the rectifier at four desired frequencies using several rectifier branches to collect the largest of RF power. The proposed rectenna is printed on FR4 substrate with modified ground plane to achieve suitable impedance bandwidth. The proposed antenna consists of elliptical radiating plane with stubs and stepped modified ground plane. The rectenna resonates at quad frequency bands at (GSM 900/1800, WiFi band and WLAN bands) with rectifier power conversion efficiency up to 56.4% at 0 dBm input power using the HSMS-2850 Schottky diode. The efficiency is more enhanced by using SMS-7630-061 Schottky diode which is characterized by a low junction capacitance and a low threshold voltage to achieve higher conversion efficiency up to 71.1% at the same 0 dBm input power for the same resonating frequency band.
基金supported by the National Science Foundation of China(No.11204298,61205025,61274126 and 61306081)the Jilin Province Science and Technology Research Project(No.20140101060JC,20150519003JH and 20130522142JH)the Outstanding Young Scientist Program of CAS.
文摘A novel concept and approach to engineering carbon nanodots(CNDs)were explored to overcome the limited light absorption of CNDs in low-energy spectral regions.In this work,we constructed a novel type of supra-CND by the assembly of surface charge-confined CNDs through possible electrostatic interactions and hydrogen bonding.The resulting supra-CNDs are the first to feature a strong,well-defined absorption band in the visible to near-infrared(NIR)range and to exhibit effective NIR photothermal conversion performance with high photothermal conversion efficiency in excess of 50%.
