Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires

Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.

Room Temperature Ferromagnetism in Ga1-xHoxN （x=0.0 and 0.05） Diluted Magnetic Semiconductor Thin Films

Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea- surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor- phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper- ties of Gal-xHoxN （x=0.0, 0.05） films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films （i.e. GaN） exhibited diamagnetic behavior, while the Ho-doped （Gao.95Hoo.05N） film exhibited a ferro- magnetic behavior.

Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors

Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.

Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR

Diluted magnetic semiconductors (DMSs) that possess both properties of semiconductors and ferromagnetism, have attracted a lot of attentions due to its potential applications for spin-sensitive electronic devices. Recently, a series of bulk form DMSs isostructural to iron-based superconductors have been reported, which can be readily investigated by microscopic experimental techniques such as nuclear magnetic resonance (NMR) and muon spin rotation (μSR). The measurements have demonstrated that homogeneous ferromagnetism is achieved in these DMSs. In this review article, we summarize experimental evidences from both NMR and μSR measurements. NMR results have shown that carriers facilitate the interactions between distant Mn atoms, while μSR results indicate that these bulk form DMSs and (Ga,Mn)As share a common mechanism for the ferromagnetic exchange interactions.

Theoretical prediction and experimental realization of transition metal doped rutiles as diluted magnetic semiconductors

First principle calculations have been performed to study the electron structures and magnetic properties of transition metal doped ruilles in order to predict room temperature diluted magnetic semiconductors. Different doping configurailons have been calculated to find the preferred doping site. The ground state energies of both FM and AFM states have been calculated to study the magnetic coupling between the dopants. The calculation results show the Co doped mutile has a Curie temperature of 1438 K. Co doped mille films have been prepared on Si substrate by magnetron sputtering. X-ray diffraction results show that the deposited film is ruille. Hysteresis loop curves measured by vibration sample magnetization show that the film is ferromagnetic at root temperature.

Homogeneous and inhomogeneous magnetic oxide semiconductors

Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.

(Ca,K)(Zn,Mn)_(2)As_(2):Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn_(2)As_(2)

We have successfully synthesized a novel diluted magnetic semiconductor(Ca_(1−2x)K_(2x))(Zn_(1−x)Mn_(x))_(2)As_(2) with decoupled charge and spin doping.The substitutions of(Ca^(2+),K^(+))and(Zn^(2+),Mn^(2+))in the parent compound CaZn_(2)As_(2)(space group P m1(No.164))introduce carriers and magnetic moments,respectively.Doping only Mn into CaZn_(2)As_(2) does not induce any type of long range magnetic ordering.The ferromagnetic ordering arise can only when K^(+)and Mn^(2+)are simultaneously doped.The res-ulted maximum Curie temperature reaches~7 K,and the corresponding coercive field is~60 Oe.The transport measurements confirm that samples with K and Mn co-doping still behave like a semiconductor.

Uniaxial strain-dependent magnetic and electronic properties of (Ga,Mn)As nanowires

Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite （Ga,Mn）As nanowires （NWs） grown along the [0001] direction were investigated based on density functional theory （DFT）. We found that （Ga,Mn）As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the N-Ws. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.

过渡金属掺杂CeO_(2)基稀磁半导体铁磁性能的研究进展

近年来过渡金属掺杂稀磁半导体材料CeO_(2)被大量研究并且取得了许多重要成果。对其铁磁性及起源进行了简单阐述,重点对不同摩尔分数的过渡金属掺杂对CeO_(2)铁磁性的影响进行了介绍,系统介绍了未掺杂和掺杂过渡金属Mn、Fe、Co,以及不同制备方法和条件对CeO_(2)铁磁性能的影响。归纳总结CeO_(2)的铁磁性能,不仅为开发新型稀磁半导体材料提供科学指导,也进一步促进过渡金属掺杂在稀磁半导体材料中的应用。研究表明,合理的掺杂配比和制备工艺对提升CeO_(2)稀磁半导体材料的室温铁磁性有明显效果。最后对该领域的未来发展方向进行了展望。

Structure and Magnetic Properties of Monodisperse Fe^(3+)-doped CeO_2 Nanospheres

This work reports the study concerning the structure and magnetic properties of undoped CeO_2 and Fe-doped CeO_2(Ce_(1-x) Fe_xO_2, 0.01 ≤ x ≤ 0.07) nanospheres with diameters of 100~200 nm prepared by hydrothermal method using polyvinylpyrrolidone(PVP) as surfactant. The prepared samples were studied by using X-ray diffraction(XRD), Raman spectroscopy, transmission electron microscopy(TEM), high-resolution transmission electron microscopy(HRTEM), X-ray absorption near-edge structure(XANES), and vibrating sample magnetometry(VSM). The XRD results showed that Fe-doped CeO_2 was single-phased with a cubic structure, and with Fe^(3+)successfully substituting in Ce^(4+) sites. Raman spectra showed a redshift of F_(2g) mode that caused by the Fe doping. The samples of both undoped CeO_2 and Fe-doped CeO_2 exhibited room temperature ferromagnetism, and the saturated magnetization(Ms) increased with increasing Fe content until x = 0.05, and then the samples displayed ferromagnetic loops as well as paramagnetic behavior. The roles of Ce^(3+) and Fe^(3+)spin electrons are discussed for the ferromagnetism in the Fe-doped CeO_2.

Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing.Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films.Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature.The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals.The results may be useful for room temperature spintronic applications based on group IV semiconductors.

Room Temperature Magnetic Behavior of Sol-Gel Synthesized Mn Doped ZnO

Mn doped ZnO nano-crystallites were synthesized by state of the art sol-gel derived auto- combustion technique. As-burnt powder was investigated with different characterization techniques to explore the properties of Mn doped ZnO dilute magnetic semiconductor. X- ray diffraction measurements indicate that Mn doped ZnO retain wurtzite type hexagonal crystal structure like ZnO. Compositional and morphological studies were carried out by energy dispersive X-ray analysis and scanning electron microscopy, respectively. Temperature dependent resistivity of the sample exhibited the semiconducting behavior of the DMS material. Room temperature magnetic properties determined by vibrating sample magnetometer, revealed the presence of ferromagnetic and diamagnetic contributions in Mn doped ZnO.

Structure and Magnetic Properties of Ni-doped ZnO Powder

Ni-doped ZnO nanopowder （Zn0.98Ni0.2O） was synthesized by improved coprecipitation method. The average particle size of the powder was estimated to be 50 nm. The powder was then processed by thermal treatment. Samples were annealed at 1 073, 1 273, and 1 473 K, respectively. The solubility of NiO in ZnO and the lattice parameters of ZnO both increased with the temperature. The magnetic property of the doped samples was examined, and hysteresis loops were got. The results showed all the samples were ferromagnetic, while powder processed at 1 273 K for 4 h got a highest saturation magnetization （Ms） of 0.0457 emu/g. Also, magnetic properties were related to the grain size of the powder.

Tailoring the structural and magnetic properties of Cu-doped ZnO by c-axis pressure

The structural and magnetic properties of the Cu-doped ZnO（ZnO：Cu） under c-axis pressure were studied using first-principle calculations. It was found that the ZnO：Cu undergoes a structural transition from Wurtzite to Graphite-like structure at a c-axis pressure of 7–8 GPa. This is accompanied by an apparent loss of ferromagnetic stability, indicating a magnetic transformation from a ferromagnetic state to a paramagnetic-like state. Further studies revealed that the magnetic instability is closely related to the variation in crystalline field originated from the structural transition, which is in association with the overlapping of spin–charge density between the Cu^2＋ and adjacent O^2-.

Room-temperature ferromagnetism induced by Cu vacancies in Cu_x(Cu_2O)_(1-x) granular films

Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

Ferromagnetism of Zn_(1-x)Cu_xO Polycrystalline Made by Solid State Reaction

The Zn1-xCuxO polycrystalline materials were prepared by doping CuO into wurtzite ZnO through solid state reaction. The high concentration of copper doping in ZnO exhibited remarkable room temperature ferromagnetism. The Experiments showed that the magnetization saturation rose with the increase of Cu content. For the low Cu content sample, the hysteresis loop was slightly tilted which indicated that the diamagnetism coexisted in this sample. The temperature dependence of magnetization of Zn1-xCuxO revealed that the magnetic exchange coupling depended on the doping concentration of Cu and there were many different local environments for magnetism. The measured hysteresis loop and temperature dependence of magnetization were overall performance of the magnetism coming from a wide distribution of ferromagnetic exchange couplings.

Theoretical Study on the Ferromagnetism of Cr-doped In_2O_3

Density functional theory （DFT） calculations are performed to investigate the electronic structure and ferromagnetism of （In, Cr）2O3. The densities of states suggest that the Cr dopants provide nearly 100% polarization of the conduction carriers and the ferromagnetic ground state in Cr-doped In2O3 can be explained from p-d hybridization mechanism. The calculation results also show that the ferromagnetism is strengthened in the presence of oxygen vacancy.

Defect induced room-temperature ferromagnetism and enhanced photocatalytic activity in Ni-doped ZnO synthesized by electrodeposition

Zn0.90Ni0.10O nanoparticles have been synthesized by single-bath two-electrode electrodeposition at constant voltage. X-ray diffraction, UV vis and photoluminescence studies reveal that a single-phase polycrystalline hcp wurtzite crystal structure of ZnO is evolved. The material consists of a large number of defects such as oxygen vacancy (Ov) and zinc interstitial (Zi). The magnetization study reveals that the sample exhibits room-temperature global ferromagnetism and the ferromagnetic ordering seems to be defect induced via bound magnetic polaron mechanism, and double exchange is also expected to have played role. Interesting optoelectronic properties have been found in the synthesized sample and the material seems to be a potential candidate to be used as a UV sensor. Such a transition metal doped ZnO based dilute magnetic semiconducting system exhibiting room-temperature ferromagnetism is likely to be first of its kind in the sense that such materials have not yet been reported to be synthesized by the simple method of electrodeposition to the best of our knowledge on the basis of ample literature review.

Carriers-assisted Enhanced Ferromagnetism in AI-doped ZnMnO Nano-crystallites

Zn0.95-zAlxMn0.050 （x=0, 0.03, 0.05, and 0.07） dilute magnetic semiconductor materials have been synthesized by sol-gel auto-combustion technique. The effect of A1 doping on the structural, electrical, and magnetic properties has been investigated. X-ray diffraction studies demonstrate the existence of single phase characteristic hexagonal wurtzite type crystal structure, similar to the host ZnO, in all the synthesized compositions. Although, the microscopic images revealed that the grains were clustered, yet some individual grains could be seen to have hexagonal texture. Electrical resistivity was observed to decrease with the rise of temperature up to 450 ℃, depicting the characteristic semiconductor behavior. Room temperature ferromagnetic behavior was observed in all the compositions. The value of saturation magnetization increased with the increase of A1 concentration in ZnMnO system referred to the gradual enhancement of free carriers.

Room Temperature Ferromagnetismin Co-doped ZnO Bulks

Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated. The results show that the air-annealed samples has similar weak ferromagnetic behavior with the as-sintered samples, but the obvious ferromagnetic behavior is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms=0.73 μB/Co and coercivity Hc=233.8Oe are obtained for the Ar/H2 annealed samples with pure single phase structure when annealing temperature is 600℃.