Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical ...Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
文摘Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.
