Real-Time Tunable Gas Sensing Platform Based on SnO_(2) Nanoparticles Activated by Blue Micro-Light-Emitting Diodes

Micro-light-emitting diodes(μLEDs)have gained significant interest as an activation source for gas sensors owing to their advantages,including room temperature operation and low power consumption.However,despite these benefits,challenges still exist such as a limited range of detectable gases and slow response.In this study,we present a blueμLED-integrated light-activated gas sensor array based on SnO_(2)nanoparticles(NPs)that exhibit excellent sensitivity,tunable selectivity,and rapid detection with micro-watt level power consumption.The optimal power forμLED is observed at the highest gas response,supported by finite-difference time-domain simulation.Additionally,we first report the visible light-activated selective detection of reducing gases using noble metal-decorated SnO_(2)NPs.The noble metals induce catalytic interaction with reducing gases,clearly distinguishing NH3,H2,and C2H5OH.Real-time gas monitoring based on a fully hardwareimplemented light-activated sensing array was demonstrated,opening up new avenues for advancements in light-activated electronic nose technologies.

高亮绿光氮化镓基Micro-LED微型显示器制备

Micro-LED作为一种新型的显示技术,具有对比度高、响应快及寿命长等优点,已成为当前研究的热点。然而,尽管潜力巨大,Micro-LED技术的商业化之路仍面临诸多技术上的挑战与瓶颈。本文旨在探讨高亮绿光氮化镓基Micro-LED微型显示器的制备过程及其相关技术。基于WVGA041全数字信号电路CMOS硅基驱动电路,制作了0.41 inch、分辨率为800×480的主动式单色绿光Micro-LED微型显示器。利用高精度倒装焊接技术实现了CMOS驱动电路与LED发光芯片的电气连接。结果表明,制备出LED显示芯片正常启亮电压为2.8V,EL光谱峰值波长524nm;在硅基CMOS电路驱动范围内,Micro-LED微型显示器在5V电压下,器件亮度为108000cd/m^(2)(最大亮度可达250000 cd/m^(2)),电流密度达到0.61A/cm^(2)时色坐标为(0.175,0.756)。当电流密度从0.3A/cm^(2)增加到1.3A/cm^(2)时,色坐标从(0.178,0.757)变化到(0.175,0.746),器件的色稳定性能够满足实际应用要求。

A single micro-LED manipulation system based on micro-gripper

Micro-LEDs(μLEDs)have advantages in terms of brightness,power consumption,and response speed.In addition,they can also be used as micro-sensors implanted in the body via flexible electronic skin.One of the key techniques involved in the fabrication ofμLED-based devices is transfer printing.Although numerous methods have been proposed for transfer printing,improving the yield ofμLED arrays is still a formidable task.In this paper,we propose a novel method for improving the yield ofμLED arrays transferred by the stamping method,using an innovative design of piezoelectrically driven asymmetric micro-gripper.Traditional grippers are too large to manipulateμLEDs,and therefore two micro-sized cantilevers are added at the gripper tips.AμLED manipulation system is constructed based on the micro-gripper together with a three-dimensional positioning system.Experimental results using this system show that it can be used successfully to manipulateμLED arrays.

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

Sweat-permeable electronic patches by designing threedimensional liquid diodes

Wearable electronics face a significant challenge related to the limited permeability of electronic materials/devices.This issue results in sweat accumulation across the interface of the device and skin following a specific period of use[1−3].Not only does it bring about discomfort for users regarding thermos-physiology,but it also has a detrimental effect on interface adhesion and signal quality,thus hindering exact sig-nal monitoring during prolonged periods[4−6].

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

基于色转换层的Micro-LED全彩色显示专利分析

Micro-LED因其发光效率高、亮度高、响应时间短的优良性能,能够满足高分辨率、高亮度的新型显示需求,被视为下一代新型显示技术。针对基于色转换层的Micro-LED全彩色显示专利技术进行分析,统计该领域的专利申请趋势、地域分布和主要申请人,梳理该领域的主要研究方向和重点专利,为后续相关领域的技术研发、专利申请和专利布局提供参考依据。

Proton‑Prompted Ligand Exchange to Achieve High‑Efficiency CsPbI_(3) Quantum Dot Light‑Emitting Diodes

CsPbI_(3)perovskite quantum dots(QDs)are ideal materials for the next generation of red light-emitting diodes.However,the low phase stability of CsPbI_(3)QDs and long-chain insulating capping ligands hinder the improvement of device performance.Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control.Here,we proposed a new ligand exchange strategy using a proton-prompted insitu exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI_(3)QDs.This exchange strategy maintained the size and morphology of CsPbI_(3)QDs and improved the optical properties and the conductivity of CsPbI_(3)QDs films.As a result,high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45%and an operational half-life of 10.79 h.

高调制带宽下的氮化镓Micro-LED LiFi光通信系统的设计与实现

本研究旨在探究高调制带宽下的氮化Micro-LED LiFi光通信系统在高调制带宽下的技术应用,首先,阐述了高调制带宽下的氮化Micro-LED LiFi系统原理,分析了其基于微小发光二极管的高速光通信的可行性。接着,完善了系统硬件设计的选型与优化,在系统软件设计层面,采用了先进的信号处理和调制解调技术,实现了高速数据传输和低误码率。最后,完成了系统实现与测试,搭建了实验平台进行了性能评估。结果表明,通过优化硬件和软件设计,系统成功实现了高传输率,在不同距离和角度下进行了功能测试,验证了系统的安全可靠性,为系统性能的进一步提升奠定了良好的技术基础。

GaN based ultraviolet laser diodes

In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.

Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power

Since Shuji Nakamura first demonstrated the nitride laser in 1996[1],the domain of semiconductor laser technology has undergone a period of remarkable growth[2,3].Al In Ga N-based diode lasers(LDs)have proven their exceptional capabilities across a spectrum of pivotal applications,including high-density data storage,laser displays,laser lighting,and quantum technology[4].

GaN基Micro-LED反向漏电流失效机理分析

针对GaN基蓝光Micro-LED芯片,采用温度应力和电压应力的实验方法研究了其反向漏电流失效机理。结果表明,在温度应力下,Micro-LED芯片退化前的反向漏电流主要由多步热辅助隧穿电流构成,且受Poole-Frenkel(PF)隧穿机制影响;电压应力(-85V)退化后,反向漏电流会随着应力时间的延长而增大,此时由多步热辅助隧穿电流转换为空间电荷限制电流机制(SCLC)。通过分析退化前后的能带图得知,长时间的电压应力会发生击穿现象,导致Micro-LED芯片内部电场剧烈变化,电子能够以高能量碰撞到晶格原子,产生大量的载流子,从而增加了非辐射复合率,使得反向漏电流由原来的1.9766×10^(-7)A增大到1.5834×10^(-4)A。

Recent Advances in Patterning Strategies for Full‑Color Perovskite Light‑Emitting Diodes

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability,pure color emission with remarkably narrow bandwidths,high quantum yield,and solution processability.Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes(PeLEDs)to their theoretical limits,their current fabrication using the spincoating process poses limitations for fabrication of full-color displays.To integrate PeLEDs into full-color display panels,it is crucial to pattern red–green–blue(RGB)perovskite pixels,while mitigating issues such as cross-contamination and reductions in luminous efficiency.Herein,we present state-of-the-art patterning technologies for the development of full-color PeLEDs.First,we highlight recent advances in the development of efficient PeLEDs.Second,we discuss various patterning techniques of MPHs(i.e.,photolithography,inkjet printing,electron beam lithography and laserassisted lithography,electrohydrodynamic jet printing,thermal evaporation,and transfer printing)for fabrication of RGB pixelated displays.These patterning techniques can be classified into two distinct approaches:in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals.This review highlights advancements and limitations in patterning techniques for PeLEDs,paving the way for integrating PeLEDs into full-color panels.

Wettability Gradient-Induced Diode:MXene-Engineered Membrane for Passive-Evaporative Cooling

Thermoregulatory textiles,leveraging high-emissivity structural materials,have arisen as a promising candidate for personal cooling management;however,their advancement has been hindered by the underperformed water moisture transportation capacity,which impacts on their thermophysiological comfort.Herein,we designed a wettability-gradient-induced-diode(WGID)membrane achieving by MXene-engineered electrospun technology,which could facilitate heat dissipation and moisture-wicking transportation.As a result,the obtained WGID membrane could obtain a cooling temperature of 1.5℃ in the“dry”state,and 7.1℃ in the“wet”state,which was ascribed to its high emissivity of 96.40%in the MIR range,superior thermal conductivity of 0.3349 W m^(-1) K^(-1)(based on radiation-and conduction-controlled mechanisms),and unidirectional moisture transportation property.The proposed design offers an approach for meticulously engineering electrospun membranes with enhanced heat dissipation and moisture transportation,thereby paving the way for developing more efficient and comfortable thermoregulatory textiles in a high-humidity microenvironment.

Flexible planar micro supercapacitor diode

Supercapacitor diode is a novel ion device that performs both supercapacitor energy storage and ion diode rectification functions.However,previously reported devices are limited by their large size and complex processes.In this work,we demonstrate a screen-printed micro supercapacitor diode(MCAPode)that based on the insertion of a finger mode with spinel ZnCo_(2)O_(4) as cathode and activated carbon as anode for the first time,and featuring an excellent area specific capacitance(1.21 mF cm^(-2)at 10 mV s^(-1))and high rectification characteristics(rectification ratioⅠof 11.99 at 40 mV s^(-1)).Taking advantage of the ionic gel electrolyte,which provides excellent stability during repeated flexing and at high temperatures.In addition,MCAPode exhibits excellent electrochemical performance and rectification capability in"AND"and"OR"logic gates.These findings provide practical solutions for future expansion of micro supercapacitor diode applications.

High-efficiency ultra-fast all-optical photonic crystal diode based on the lateral-coupled nonlinear elliptical defect

An all-optical Fano-like diode featuring a nonlinear lateral elliptical micro-cavity and a reflecting column in the photonic crystal waveguide is proposed.The asymmetric micro-cavity is constructed by removing one rod and changing the shape of the lateral rod from a circle to an ellipse.A reflecting pillar is also introduced into the waveguide to construct an F-P cavity with the elliptical defect and enhance the asymmetric transmission for the incident light wave transmitting rightwards and leftwards,respectively.By designing the size of the ellipse and optimizing a reflecting rod at a suitable position,a maximum forward light transmittance of-1.14 dB and a minimum backward transmittance of-57.66 dB are achieved at the working wavelength of 1550.47 nm.The corresponding response time is about 10 ps when the intensity of the pump light beam resonant at 637 nm is 3.97 W/μm2.

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.

钙钛矿量子点色转换Micro-LEDs:稳定性与图案化研究进展

微型发光二极管(Micro light-emitting diode,Micro-LED)显示具有优异的显示性能和光电性质,被称为“下一代”终极显示技术。为了满足近眼显示需求,Micro-LED需要进一步微缩与集成化。随着微纳级图案化技术的不断革新,荧光色转换层法表现出低制造成本等显著优势,相较于三色芯片法,更适合应用于对色域、分辨率有更高要求的虚拟/增强现实显示应用。钙钛矿量子点是最有前景的荧光色转换材料,然而自身晶格固有的不稳定性和外界环境因素刺激共同导致的结构降解是一大问题。另外,如何制备与Micro-LED芯片阵列相匹配的微米级荧光阵列图案是至关重要的。为此,本文首先讲述了造成钙钛矿量子点结构不稳定性的原因,其次,总结了配体交换、离子掺杂、表面包覆和化学交联等方案在提升钙钛矿量子点稳定性方面的应用,最后,总结了光刻技术和喷墨打印技术在制备高分辨率钙钛矿量子点荧光阵列的最新研究进展。

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices.In this study,we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide.The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and,on the other hand,can screen the charged defects at the grain boundaries with potassium cations.This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films,leading to a significant enhancement of photoluminescence quantum yield to near-unity values(95%).Meanwhile,the potassium bromide treatment promoted the growth of homogeneous and smooth film,facilitating the charge carrier injection in the devices.Consequently,the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of~21%and maximum luminance of~60,000 cd m^(-2).This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.