A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The em...A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.展开更多
Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimi...Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.展开更多
We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted ...We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.展开更多
A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the externa...A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the external mirror (C 0). Considering the fact that｜C 0/S｜ should be larger than unity if the external cavity is effective,and｜C 1/S｜ should be larger than unity if the phase locking may be established in the external cavity.The requirements on the reflection at the facet of the diode laser array have been specified in terms of the cavity length and reflection coefficient of the external mirror.展开更多
Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW se...Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave （200μs pulse width and 2% duty cycles） operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.展开更多
We report a demonstration of a fast wavelength tunable source (TWS) based on the laser diode array coupled to the arrayed waveguide grating (AWG) multiplexer. The switching and optical characteristics of TWS make it a...We report a demonstration of a fast wavelength tunable source (TWS) based on the laser diode array coupled to the arrayed waveguide grating (AWG) multiplexer. The switching and optical characteristics of TWS make it a candidate for implementing the wavelength-division space switch fabric for an optical packet/burst switching.展开更多
A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere,and the output of every bar is specially off-axis compressed to realize high coupling effic...A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere,and the output of every bar is specially off-axis compressed to realize high coupling efficiency.The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium.The efficiency of the hollow light pipe,which is used for semiconductor laser diode stack coupling,is analyzed by geometric optics and ray tracing.Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure.Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system,and guides parameter optimization.Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution.展开更多
We present a 940 nm quasi-continuous wave semiconductor laser designed as a building block for high-power fiber coupled pump modules.The laser comprises a 400μm narrow-stripe array mounted on an aluminum nitride subs...We present a 940 nm quasi-continuous wave semiconductor laser designed as a building block for high-power fiber coupled pump modules.The laser comprises a 400μm narrow-stripe array mounted on an aluminum nitride substrate using hard solder.The chip has been optimized for high optical power and low lateral far-field angles.Two vertical and six lateral structure variations have been investigated to determine the best achievable performance.Operating at 1 ms pulse width and a repetition rate of 10 Hz,the laser device reaches a maximum pulse power of 86 W from a 400μm aperture and more than 62%maximum conversion efficiency.Low lateral far-field angles(95%power enclosed)of11.5 and 13.5,depending on the epitaxial design,enable efficient multimode fiber coupling.The potential for highly reliable applications has been demonstrated.展开更多
文摘A piece of multimode optical fiber with a low num er ical aperture (NA) is used as an inexpensive microlens to collimate the output r adiation of a laser diode bar in the high numerical aperture (NA) direction.The emissions of the laser diode bar are coupled into multimode fiber array.The radi ation from individual ones of emitter regions is optically coupled into individu al ones of fiber array.Total coupling efficiency and fiber output power are 75% and 15W,respectively.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0402002,2016YFB0401803,2017YFB0405002,2017YFB0405003,and 2017YFB0405005)the National Natural Science Foundation of China(Grant Nos.61574160,61704184,and 61334005)+3 种基金the Strategic Priority Research Program of the Chinese Academy of Science(Grant No.XDA09020401)the Chinese Academy of Science Visiting Professorship for Senior International Scientists(Grant No.2013T2J0048)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20170430)the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows,China(Grant No.2016LH0026)
文摘Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.
文摘We report one thick layer of hard-baked photoresist mask.The laser array stripe pattern was defined by standard wet lithography.With this mask, a 10 W QCW(quasi-continuous wave) operation of a narrow proton implanted multiple stripe conventional single quantum well separate confinement heterostructure(SQW-SCH) GaAlAs diode laser array has been realized.These devices exhibit the lateral far-field radiation pattern of a phase-locked array of gain-guided semiconductor injection laser array.The twenty stripe laser array has a lateral far-field beam divergence full width at half maximum(FWHM) of less than 3°,and three twenty stripe laser array has a beam divergence in the plane of the junction of about 9°.
文摘A diode laser array(DLA)positioned in an external cavity can receive the radiations emitted from its neighboring elements (C 1) and that of itself (S) after being reflected at the DLA facet as well as from the external mirror (C 0). Considering the fact that｜C 0/S｜ should be larger than unity if the external cavity is effective,and｜C 1/S｜ should be larger than unity if the phase locking may be established in the external cavity.The requirements on the reflection at the facet of the diode laser array have been specified in terms of the cavity length and reflection coefficient of the external mirror.
文摘Through optimizing the tensile-strained single quantum well （SQW） epitaxial structure and introducing doublechannel deep isolation groove etching technologies of linear laser diode arrays, GaAsP/GaInP/AlGaInP SQW separate confinement laser emitting structures are grown by low-pressure metal organic chemical vapor deposition and lcm-wide laser bars with 50% fill factor are fabricated. The cross sections of the channels are analyzed using scanning electron microscope. Mounted on passively cooled copper heat sinks, the laser bars achieve an output power of 259W in quasi-continuouswave （200μs pulse width and 2% duty cycles） operation at a driving current of 300A,which is the upper limit of power supply in our measurement setup,and no catastrophically optical mirror damage is observed. A peak power conversion efficiency of 52% is obtained at 104A with 100W output power.At a high-power operation of 100W,the spectrum of the bar has a centric wavelength of 807.8nm and full width at half maximum of 2.4nm. The full angles at half maximum power for fast axis and slow axis are 29.3°and 7.5° ,respectively.
文摘We report a demonstration of a fast wavelength tunable source (TWS) based on the laser diode array coupled to the arrayed waveguide grating (AWG) multiplexer. The switching and optical characteristics of TWS make it a candidate for implementing the wavelength-division space switch fabric for an optical packet/burst switching.
基金Project supported by the National High Technology Research and Development Program of China(No.2009AA034701)
文摘A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere,and the output of every bar is specially off-axis compressed to realize high coupling efficiency.The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium.The efficiency of the hollow light pipe,which is used for semiconductor laser diode stack coupling,is analyzed by geometric optics and ray tracing.Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure.Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system,and guides parameter optimization.Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution.
基金funded through the Senate Competition Committee (SAW) of the Leibniz Association within the Joint Initiative for Research and Innovation of the German Federal Government and the Lnder
文摘We present a 940 nm quasi-continuous wave semiconductor laser designed as a building block for high-power fiber coupled pump modules.The laser comprises a 400μm narrow-stripe array mounted on an aluminum nitride substrate using hard solder.The chip has been optimized for high optical power and low lateral far-field angles.Two vertical and six lateral structure variations have been investigated to determine the best achievable performance.Operating at 1 ms pulse width and a repetition rate of 10 Hz,the laser device reaches a maximum pulse power of 86 W from a 400μm aperture and more than 62%maximum conversion efficiency.Low lateral far-field angles(95%power enclosed)of11.5 and 13.5,depending on the epitaxial design,enable efficient multimode fiber coupling.The potential for highly reliable applications has been demonstrated.
