The nitrided layers mainly containing TiN dendrites were fabricated by direct current nitrogen arc melting method. The test results show that the layers are harder and more resistant to wear than the titanium substrat...The nitrided layers mainly containing TiN dendrites were fabricated by direct current nitrogen arc melting method. The test results show that the layers are harder and more resistant to wear than the titanium substrate. Arc traveling speeds and arc currents have an effect on both the microstructures and the properties of the layers. Decreasing the arc traveling speed or increasing the arc current can obviously enhance the hardness and the wear resistance of the nitrided layers.展开更多
The characteristics of nitrided layers prepared on commercially pure titanium substrates by direct current nitrogen arc are presented by scanning electron microscopy （SEM） and transmission electron microscopy （TEM...The characteristics of nitrided layers prepared on commercially pure titanium substrates by direct current nitrogen arc are presented by scanning electron microscopy （SEM） and transmission electron microscopy （TEM） micrographs as well as X-ray diffraction （ XRD ）. The titanium nitride （ TiN ） dendrites were fully developed with interconnected cellular morphologies at the top surface but grew almost perpendicular to the integrace with coarser arms in the middle area. Also less TiN was found near the interface. The energy inputs had an obvious effect on the microstructures and the hardness of the nitrided layers. The maximum micro-hardness was 2 500 HV at the top surface which was over 9 times higher than that of the substrate.展开更多
Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition(CVD) were examined using a low-temperature photoluminescence(PL) technique. The results show that most of the nitrogen-vac...Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition(CVD) were examined using a low-temperature photoluminescence(PL) technique. The results show that most of the nitrogen-vacancy(NV) complexes are present as NV-centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N_2 incorporation and the high mobility of vacancies under growth temperatures of 950–1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy(Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition(MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV-centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.展开更多
高压直流断路器(Direct Current Circuit Breaker,DCCB)需承载直流线路正常工作时的工作电流,且需在规定时间内接通分断直流线路正常工作时的电流,以及分断直流线路短路故障电流。高压DCCB是确保高压直流输配电网安全、可靠运行的基础...高压直流断路器(Direct Current Circuit Breaker,DCCB)需承载直流线路正常工作时的工作电流,且需在规定时间内接通分断直流线路正常工作时的电流,以及分断直流线路短路故障电流。高压DCCB是确保高压直流输配电网安全、可靠运行的基础。混合式高压DCCB既具备机械式高压DCCB的优点,也具备固态高压DCCB的优点。在分析了各类混合式高压DCCB的拓扑、工作原理基础上,总结了混合式高压DCCB的设计关键技术,如电弧数学模型、串联均压、并联均流等问题。展开更多
文摘The nitrided layers mainly containing TiN dendrites were fabricated by direct current nitrogen arc melting method. The test results show that the layers are harder and more resistant to wear than the titanium substrate. Arc traveling speeds and arc currents have an effect on both the microstructures and the properties of the layers. Decreasing the arc traveling speed or increasing the arc current can obviously enhance the hardness and the wear resistance of the nitrided layers.
文摘The characteristics of nitrided layers prepared on commercially pure titanium substrates by direct current nitrogen arc are presented by scanning electron microscopy （SEM） and transmission electron microscopy （TEM） micrographs as well as X-ray diffraction （ XRD ）. The titanium nitride （ TiN ） dendrites were fully developed with interconnected cellular morphologies at the top surface but grew almost perpendicular to the integrace with coarser arms in the middle area. Also less TiN was found near the interface. The energy inputs had an obvious effect on the microstructures and the hardness of the nitrided layers. The maximum micro-hardness was 2 500 HV at the top surface which was over 9 times higher than that of the substrate.
基金financially supported by the International Science and Technology Cooperation Program of China (No.2015DFG02100)the National Key Laboratory of Shock Wave and Detonation Physics (LSD) Project (No.YK20150101001)
文摘Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition(CVD) were examined using a low-temperature photoluminescence(PL) technique. The results show that most of the nitrogen-vacancy(NV) complexes are present as NV-centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N_2 incorporation and the high mobility of vacancies under growth temperatures of 950–1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy(Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition(MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV-centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.
文摘高压直流断路器(Direct Current Circuit Breaker,DCCB)需承载直流线路正常工作时的工作电流,且需在规定时间内接通分断直流线路正常工作时的电流,以及分断直流线路短路故障电流。高压DCCB是确保高压直流输配电网安全、可靠运行的基础。混合式高压DCCB既具备机械式高压DCCB的优点,也具备固态高压DCCB的优点。在分析了各类混合式高压DCCB的拓扑、工作原理基础上,总结了混合式高压DCCB的设计关键技术,如电弧数学模型、串联均压、并联均流等问题。
