The direct ionization processes in the collisions of partially stripped carbon and oxygen ions with helium atoms at low-to-intermediate energies

The values of direct double- to-single ionization ratio R of helium atoms induced by C^q＋, O^q＋ （q = 1 -4） ions at incident energies from 0.2 to 8.5MeV are measured. Based on the existing model （Shao J X, Chen X M and Ding B W 2007 Phys. Rev. A 75 012701） the effective charge of the projectile is introduced to theoretically estimate the value of R for the partially stripped ions impacting on helium atoms. The results calculated from our ＂effective charge＂ model are in good agreement with the experimental data, and the dependence of the effective charge on the ionization energy of the projectile is also discussed qualitatively.

Exploration of magnetic field generation of H_(3)^(2+)by direct ionization and coherent resonant excitation

Coherent electronic dynamics are of great significance in photo-induced processes and molecular magnetism.We theoretically investigate electronic dynamics of triatomic molecule H_(3)^(2+) by circularly polarized pulses,including electron density distributions,induced electronic currents,and ultrafast magnetic field generation.By comparing the results of the coherent resonant excitation and direct ionization,we found that for the coherent resonant excitation,the electron is localized and the coherent electron wave packet moves periodically between three protons,which can be attributed to the coherent superposition of the ground A′state and excited E+state.Whereas,for the direct single-photon ionization,the induced electronic currents mainly come from the free electron in the continuum state.It is found that there are differences in the intensity,phase,and frequency of the induced current and the generated magnetic field.The scheme allows one to control the induced electronic current and the ultrafast magnetic field generation.

Soft error reliability in advanced CMOS technologies—trends and challenges

With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the SETs.The mechanisms and the trends with downscaling of these issues are briefly discussed.We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.

Simulation of the characteristics of low-energy proton induced single event upset

Monte Carlo simulation results are reported on the single event upset(SEU) triggered by the direct ionization effect of low-energy proton. The SEU cross-sections on the 45 nm static random access memory(SRAM) were compared with previous research work, which not only validated the simulation approach used herein, but also exposed the existence of saturated cross-section and the multiple bit upsets(MBUs) when the incident energy was less than 1 MeV. Additionally, it was observed that the saturated cross-section and MBUs are involved with energy loss and critical charge. The amount of deposited charge and the distribution with respect to the critical charge as the supplemental evidence are discussed.