Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and t...Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.展开更多
With recent breakthroughs in camera and image processing technologies single-particle electron cryo-microscopy （CryoEM） has suddenly gained the attention of structural biologists as a powerful tool able to solve the...With recent breakthroughs in camera and image processing technologies single-particle electron cryo-microscopy （CryoEM） has suddenly gained the attention of structural biologists as a powerful tool able to solve the atomic structures of biological complexes and assemblies. Compared with x-ray crystallography, CryoEM can be applied to partially flexible structures in solution and without the necessity of crystallization, which is especially important for large complexes and assemblies. This review briefly explains several key bottlenecks for atomic resolution CryoEM, and describes the corre- sponding solutions for these bottlenecks based on the recent technical advancements. The review also aims to provide an overview about the technical differences between its applications in biology and those in material science.展开更多
In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiG...In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2014CB339800the National Natural Science Foundation of China under Grant Nos 61521001,11173015 and 11227904+1 种基金the Fundamental Research Funds for the Central Universitiesthe Key Laboratory of Advanced Techniques for Manipulating Electromagnetic Waves of Jiangsu Province
文摘Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.
基金supported by Tsinghua–Peking Joint Center for Life Sciences,China
文摘With recent breakthroughs in camera and image processing technologies single-particle electron cryo-microscopy （CryoEM） has suddenly gained the attention of structural biologists as a powerful tool able to solve the atomic structures of biological complexes and assemblies. Compared with x-ray crystallography, CryoEM can be applied to partially flexible structures in solution and without the necessity of crystallization, which is especially important for large complexes and assemblies. This review briefly explains several key bottlenecks for atomic resolution CryoEM, and describes the corre- sponding solutions for these bottlenecks based on the recent technical advancements. The review also aims to provide an overview about the technical differences between its applications in biology and those in material science.
文摘In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.
