Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater o...Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.展开更多
High power optically pumped vertical-external-cavity surface-emitting lasers with front and end pump are re- ported. The gain chip consists of 15 repeats of In0.26GaAs/GaAsP0.02 multiple quantum wells and 30 pairs of ...High power optically pumped vertical-external-cavity surface-emitting lasers with front and end pump are re- ported. The gain chip consists of 15 repeats of In0.26GaAs/GaAsP0.02 multiple quantum wells and 30 pairs of Alo.2GaAs/Alo.98GaAs distributed Bragg reflectors. The maximum output power of 3 W, optical-to-optical conversion efficiency of 22.4%, and slope efficiency of 29.8% are obtained with 5-℃ heatsink temperature under the front pump, while the maximum output power of 1.1 W, optical-to-optical conversion efficiency of 23.2%, and slope efficiency of 30.8% are reached with 5-℃ heatsink temperature under the end pump. Influences of thermal effects on the output power of the laser with front and end pump are discussed.展开更多
The intrinsic features involving a circularly symmetric beam profile with low divergence, planar geometry as well as the increasingly enhanced power of vertical-cavity surface-emitting lasers （VCSELs） have made the ...The intrinsic features involving a circularly symmetric beam profile with low divergence, planar geometry as well as the increasingly enhanced power of vertical-cavity surface-emitting lasers （VCSELs） have made the VCSEL a promising pump source in direct end bonding to a solid-state laser medium to form the minimized, on-wafer integrated laser system. This scheme will generate a surface contact pump configuration and thus additional end thermal coupling to the laser medium through the joint interface of both materials, apart from pump beam heating. This paper analytically models temperature distributions in both VCSEL and the laser medium from the end thermal coupling regarding surface contact pump configuration using a top-emitting VCSEL as the pump source for the first time. The analytical solutions are derived by introducing relative temperature and mean temperature expressions. The results show that the end contact heating by the VCSEL could lead to considerable temperature variations associated with thermal phase shift and thermal lensing in the laser medium. However, if the central temperature of the interface is increased by less than 20 K, the end contact heating does not have a significant thermal influence on the laser medium. In this case, the thermal effect should be dominated by pump beam heating. This work provides useful analytical results for further analysis of hybrid thermal effects on those lasers pumped by a direct VCSEL bond.展开更多
We report a wavelength-tunable multi-point pump scheme of the semiconductor disk lasers(SDLs).By designing an external cavity of SDL with an intra-cavity transmission grating,multiple pump gain regions share the same ...We report a wavelength-tunable multi-point pump scheme of the semiconductor disk lasers(SDLs).By designing an external cavity of SDL with an intra-cavity transmission grating,multiple pump gain regions share the same resonator.The effect of the intra-cavity grating on the output laser power,wavelength,and beam quality was investigated.The emission wavelength could be tuned over a bandwidth of~18 nm.With multi-point pumping,we achieve the laser output power with almost no loss,and further improvement is limited by the thermal effect.The changes in the beam are due to the mode selectivity by the intra-cavity grating.展开更多
基金the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20210593)the Foundation of Jiangsu Provincial Double Innovation Doctor Program (Grant No. 30644)+2 种基金the National Natural Science Foundation of China (Grant No. 62204127)State Key Laboratory of Luminescence and Applications (Grant No. SKLA 202104)open research fund of Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education)。
文摘Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.
基金Project supported by the Chongqing Research Program of Basic Research and Frontier Technology(Grant No.cstc2015jcyj BX0098)the National Natural Science Foundation of China(Grant No.61575011)the Foundation for the Creative Research Groups of Higher Education of Chongqing(Grant No.CXTDX201601016)
文摘High power optically pumped vertical-external-cavity surface-emitting lasers with front and end pump are re- ported. The gain chip consists of 15 repeats of In0.26GaAs/GaAsP0.02 multiple quantum wells and 30 pairs of Alo.2GaAs/Alo.98GaAs distributed Bragg reflectors. The maximum output power of 3 W, optical-to-optical conversion efficiency of 22.4%, and slope efficiency of 29.8% are obtained with 5-℃ heatsink temperature under the front pump, while the maximum output power of 1.1 W, optical-to-optical conversion efficiency of 23.2%, and slope efficiency of 30.8% are reached with 5-℃ heatsink temperature under the end pump. Influences of thermal effects on the output power of the laser with front and end pump are discussed.
文摘The intrinsic features involving a circularly symmetric beam profile with low divergence, planar geometry as well as the increasingly enhanced power of vertical-cavity surface-emitting lasers （VCSELs） have made the VCSEL a promising pump source in direct end bonding to a solid-state laser medium to form the minimized, on-wafer integrated laser system. This scheme will generate a surface contact pump configuration and thus additional end thermal coupling to the laser medium through the joint interface of both materials, apart from pump beam heating. This paper analytically models temperature distributions in both VCSEL and the laser medium from the end thermal coupling regarding surface contact pump configuration using a top-emitting VCSEL as the pump source for the first time. The analytical solutions are derived by introducing relative temperature and mean temperature expressions. The results show that the end contact heating by the VCSEL could lead to considerable temperature variations associated with thermal phase shift and thermal lensing in the laser medium. However, if the central temperature of the interface is increased by less than 20 K, the end contact heating does not have a significant thermal influence on the laser medium. In this case, the thermal effect should be dominated by pump beam heating. This work provides useful analytical results for further analysis of hybrid thermal effects on those lasers pumped by a direct VCSEL bond.
基金supported by the National Natural Science Foundation of China(Nos.61790584 and 62025506)the funding from TRUMPF,and K.C.Wong Education Foundation。
文摘We report a wavelength-tunable multi-point pump scheme of the semiconductor disk lasers(SDLs).By designing an external cavity of SDL with an intra-cavity transmission grating,multiple pump gain regions share the same resonator.The effect of the intra-cavity grating on the output laser power,wavelength,and beam quality was investigated.The emission wavelength could be tuned over a bandwidth of~18 nm.With multi-point pumping,we achieve the laser output power with almost no loss,and further improvement is limited by the thermal effect.The changes in the beam are due to the mode selectivity by the intra-cavity grating.
基金Project supported by the National Science Foundation of China under Contract Number NSFC(60636020,60676034,60706007)Project supported by CAS Innovation ProgramNational Science Foundation of Jilin Province(20080335,20086011)~~
