Based on the previous study results, two higher accuracy explicit solutions to the dispersion equation for wave length are presented in this paper. These two solutions have an accuracy of 0. 1% over all wave lengths, ...Based on the previous study results, two higher accuracy explicit solutions to the dispersion equation for wave length are presented in this paper. These two solutions have an accuracy of 0. 1% over all wave lengths, which is sufficiently complete for practical application. At the same time, several previous explicit solutions also have been reviewed and compared herein. In comparison with accuracy, the results show that the present two solutions are as good as Wu and Thornton＇s solution （which has a good accuracy over all wave lengths, but its calculation formula is so complex that it is hard to be used with a hand calculator）, and are better than the other solutions, they may be rather useful in practical calculation with a hand calculator or computer.展开更多
The discretization size is limited by the sampling theorem, and the limit is one half of the wavelength of the highest frequency of the problem. However, one half of the wavelength is an ideal value. In general, the d...The discretization size is limited by the sampling theorem, and the limit is one half of the wavelength of the highest frequency of the problem. However, one half of the wavelength is an ideal value. In general, the discretization size that can ensure the accuracy of the simulation is much smaller than this value in the traditional finite element method. The possible reason of this phenomenon is analyzed in this paper, and an efficient method is given to improve the simulation accuracy.展开更多
In this paper,the dispersion relationship is derived by using the k·p method with the help of the perturbation theory,and we obtain the analytical expression in connection with the deformation potential.The calcu...In this paper,the dispersion relationship is derived by using the k·p method with the help of the perturbation theory,and we obtain the analytical expression in connection with the deformation potential.The calculation of the valence band of the biaxial strained Ge/（001）Si1-xGex is then performed.The results show that the first valence band edge moves up as Ge fraction x decreases,while the second valence band edge moves down.The band structures in the strained Ge/（001）Si 0.4 Ge 0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0,0,k] and the [k,0,0] directions.Furthermore,we employ a pseudo-potential total energy package（CASTEP） approach to calculate the band structure with the Ge fraction ranging from x = 0.6 to 1.Our analytical results of the splitting energy accord with the CASTEP-extracted results.The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET.展开更多
基金This study was financially supported by the Doctor Degree ProgramFoundation of the Ministry of Education of China(Grant No.20050294009)
文摘Based on the previous study results, two higher accuracy explicit solutions to the dispersion equation for wave length are presented in this paper. These two solutions have an accuracy of 0. 1% over all wave lengths, which is sufficiently complete for practical application. At the same time, several previous explicit solutions also have been reviewed and compared herein. In comparison with accuracy, the results show that the present two solutions are as good as Wu and Thornton＇s solution （which has a good accuracy over all wave lengths, but its calculation formula is so complex that it is hard to be used with a hand calculator）, and are better than the other solutions, they may be rather useful in practical calculation with a hand calculator or computer.
文摘The discretization size is limited by the sampling theorem, and the limit is one half of the wavelength of the highest frequency of the problem. However, one half of the wavelength is an ideal value. In general, the discretization size that can ensure the accuracy of the simulation is much smaller than this value in the traditional finite element method. The possible reason of this phenomenon is analyzed in this paper, and an efficient method is given to improve the simulation accuracy.
基金Project supported by the Fundamental Research Funds for the Central Universities,China (Grant Nos. 72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province,China (Grant No. 2010JQ8008)
文摘In this paper,the dispersion relationship is derived by using the k·p method with the help of the perturbation theory,and we obtain the analytical expression in connection with the deformation potential.The calculation of the valence band of the biaxial strained Ge/（001）Si1-xGex is then performed.The results show that the first valence band edge moves up as Ge fraction x decreases,while the second valence band edge moves down.The band structures in the strained Ge/（001）Si 0.4 Ge 0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0,0,k] and the [k,0,0] directions.Furthermore,we employ a pseudo-potential total energy package（CASTEP） approach to calculate the band structure with the Ge fraction ranging from x = 0.6 to 1.Our analytical results of the splitting energy accord with the CASTEP-extracted results.The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET.
