The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron ...The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose （Dd）. One particular electron radiation environment, relative to a geosynchronous earth orbit （GEO）, is chosen to calculate the total Dd behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.展开更多
Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power （Pmax） is presented and anMyzed. The degradation at both electron energies has been c...Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power （Pmax） is presented and anMyzed. The degradation at both electron energies has been correlated with the displacement damage dose （Dd）. A good linearity between the electron Dd and the mean Pmax degradation is obtained. The concept of Dd has Mso been used to predict the Si solar cell response in a low-earth-orbit （Altitude 799 km, Inclination 99~） radiation environment, considering the shielded effect of a 120 ~m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite （duration from April 2007 to July 2010）, a good match can be found between the on-orbit data and the predicted results using Dd methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.展开更多
基金Project supported by the National Key Laboratory for Vacuum & Cryogenics Technology and Physics Foundation of China (Grant No 9140C5503060802)the National High Technology Development Program of China (Grant No 2007AA042431)
文摘The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose （Dd）. One particular electron radiation environment, relative to a geosynchronous earth orbit （GEO）, is chosen to calculate the total Dd behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.
文摘Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power （Pmax） is presented and anMyzed. The degradation at both electron energies has been correlated with the displacement damage dose （Dd）. A good linearity between the electron Dd and the mean Pmax degradation is obtained. The concept of Dd has Mso been used to predict the Si solar cell response in a low-earth-orbit （Altitude 799 km, Inclination 99~） radiation environment, considering the shielded effect of a 120 ~m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite （duration from April 2007 to July 2010）, a good match can be found between the on-orbit data and the predicted results using Dd methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.
