High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback （DFB） lasers using varied ridge width with a 4 x 1-multimode-interference （MMI） optical combiner and a semiconductor optical amplifier （SOA） is demon- strated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio （SMSR） exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.

Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

Measurement and Characterization of Microwave Interaction between Integrated Distributed Feedback Laser Diode and Electro-Absorption Modulator

Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.

InAs/GaAs quantum dot laterally coupled distributed feedback lasers at 1.3μm

We report the InAs/GaAs quantum dot laterally coupled distributed feedback(LC-DFB)lasers operating at room temperature in the wavelength range of 1.31μm.First-order chromium Bragg gratings were fabricated alongside the ridge waveguide to obtain the maximum coupling coefficient with the optical field.Stable continuous-wave single-frequency operation has been achieved with output power above 5 mW/facet and side mode suppression ratio exceeding 52 dB.Moreover,a single chip integrating three LC-DFB lasers was tentatively explored.The three LC-DFB lasers on the chip can operate in single mode at room temperature,covering the wavelength span of 35.6 nm.

1.82-μm distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H_2 O sensing system

High-strained InGaAs/InGaAsP multiple quantum wells （MQWs） distributed feedback （DFB） lasers, fab- ricated using metal organic chemical vapor deposition, are presented at 1,82 μm with a high side-mode- suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/℃, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be apt）lied to H2O concentration sensing.

Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency

A 7.8-μm surface emitting second-order distributed feedback quantum cascade laser （DFB QCL） structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm-1. Using a π phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

Directly modulated active distributed reflector distributed feedback lasers over wide temperature range operation(-40 to 85℃)

We experimentally demonstrated that the distributed feedback(DFB) lasers with the active distributed reflector achieved a 25.8 Gb/s operation over a wide temperature range of -40 to 85℃. The DFB lasers can achieve additional feedback from an active distributed reflector with accurately controlled phase, and single-mode yields are not related to the position of cleave. The threshold currents of the fabricated laser are 6 mA and 20 mA at -40℃ and 85℃, respectively. The side mode suppression ratio of the fabricated laser is above 50 dB at all temperatures. Transmissions of 25.8 Gb/s after 10 km single-mode fibers with clear eye openings and less than 0.8 dB power penalty over a wide temperature range have been demonstrated as well.

Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer

We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.

Theoretical modelling of the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers

By employing a simple model of describing three-level lasers, we have theoretically investigated the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers. And based on the theoretical analysis we have proposed a promising method to suppress self-pulsing behaviour in the fibre lasers.

A 795 nm gain coupled distributed feedback semiconductor laser based on tilted waveguides

The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition.In this paper,in order to realize specific 795 nm lasing,we designed tilted ridge distributed feedback lasers based on purely gain coupled effect induced by periodic current injection windows through changing the angle of the tilted ridge.The fabricated devices were cleaved into 2 mm-cavity-length,including 5 tilted angles.The peak output powers of all devices were above 30 mW.Single longitudinal mode lasing was realized in all tilted Fabry-Perot cavities using periodic current injection windows,with side mode suppression ratio over 30 dB.The total wavelength range covered 8.656 nm at 20℃.It was disclosed theoretically and experimentally that the output powers,threshold currents,and central wavelengths of the tilted ridge purely gain coupled DFB lasers were relevant to the tilted angles.The results will be instructive for future design of DFB laser arrays with different central wavelengths.

Analysis and modeling of ridge waveguide quarterly wavelength shifted distributed feedback laser with three rate equations

In this paper, ridge waveguide quarterly wavelength shifted distributed feedback （RW-QWS- DFB） laser was modeled and analyzed. In this behavioral model, some characteristics of the device, such as thresh- old current, line width, power of output wave, spectrum of output wave, and laser stability in high powers, were investigated in accordance with different physical and geographical parameters such as sizes and structures of the layers. Considering a new proposed algorithm, the analysis of the mentioned structures was performed using transfer matrix method （TMM）, the solution of coupled waves and carrier rate equations. The results showed the advantages of some parameters in this structure.

Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density

We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.

Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect

Modulation bandwidth enhancement in a directly modulated two-section distributed feedback(TS-DFB)laser based on a detuned loading effect is investigated and experimentally demonstrated.The results show that the 3-dB bandwidth of the TS-DFB laser is increased to 17.6 GHz and that chirp parameter can be reduced to 2.24.Compared to the absence of a detuned loading effect,there is a 4.6 GHz increase and a 2.45 reduction,respectively.After transmitting a 10 Gb/s non-return-to-zero(NRZ)signal through a 5-km fiber,the modulation eye diagram still achieves a large opening.Eight-channel laser arrays with precise wavelength spacing are fabricated.Each TS-DFB laser in the array has side mode suppression ratios(SMSR)>49.093 dB and the maximum wavelength residual<0.316 nm.

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

Influence of laser linewidth on performance of Brillouin optical time domain reflectometry

The effects of optical sources with different laser linewidths on Brillouin optical time domain reflectometry （BOTDR） are investigated numerically and experimentally. Simulation results show that the spectral linewidth of spontaneous Brillouin scattering remains almost constant when the laser linewidth is less than 1 MHz at the same pulse width; otherwise, it increases sharply. A comparison between a fiber laser （FL） with 4-kHz linewidth at 3 dB and a distributed feedback （DFB） laser with 3-MHz linewidth is made experimentally. When a constant laser power is launched into the sensing fiber, the fitting linewidths of the beat signals （backscattered Brillouin light and local oscillator （LO）） is about 5 MHz wider for the DFB laser than for the FL and the intensity of the beat signal is about a half. Furthermore, the frequency fluctuation in the long sensing fiber is lower for the FL source, yielding about 2 MHz less than that of the DFB laser, indicating higher temperature/strain resolution. The experimental results are in good agreement with the numerical simulations.

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback （DFB） lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.

Application of sampled grating to control the lasing wavelength in complex-coupled DFB laser

This paper reports that the complex-coupled distributed feedback laser with the sampled grating has been designed and fabricated.The ＋1st order reflection of the sampled grating is utilized for laser single mode operation,which is 1.5387 μm in the experiment.The typical threshold current of the device is 30 mA,and the optical output power is about 10 mW at the injection current of 100 mA.