High-strained InGaAs/InGaAsP multiple quantum wells （MQWs） distributed feedback （DFB） lasers, fab- ricated using metal organic chemical vapor deposition, are presented at 1,82 μm with a high side-mode- suppressio...High-strained InGaAs/InGaAsP multiple quantum wells （MQWs） distributed feedback （DFB） lasers, fab- ricated using metal organic chemical vapor deposition, are presented at 1,82 μm with a high side-mode- suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/℃, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be apt）lied to H2O concentration sensing.展开更多
基金supported by the National "863" Project of China(No.2012AA012203)the National "973" Program of China(No.2011CB301702)
文摘High-strained InGaAs/InGaAsP multiple quantum wells （MQWs） distributed feedback （DFB） lasers, fab- ricated using metal organic chemical vapor deposition, are presented at 1,82 μm with a high side-mode- suppression ratio of 49.53 dB. The current- and temperature-tuning rates of the DFB mode wavelength are 0.01 nm/mA and 0.13 nm/℃, respectively. A characteristic temperature of 51 K is also confirmed. The DFB laser demonstrates good performance and can be apt）lied to H2O concentration sensing.
