Distributed amplifier of L-type network with 2-μm GaAs HBT process

The characteristic impedances of L-type and T-type networks are first investigated for a distributed amplifier design.The analysis shows that the L-type network has better frequency characteristics than the T-type one.A distribution amplifier based on the L-type network is implemented with the 2-μm GaAs HBT（heterojunction-bipolar transistor） process of WIN semiconductors.The measurement result presents excellent bandwidth performance and gives a gain of 5.5 dB with a gain flatness of ±1dB over a frequency range from 3 to 18 GHz.The return losses S11 and S22 are below-10dB in the designed frequency range.The output 1-dB compression point at 5 GHz is 13.3 dBm.The chip area is 0.95 mm2 and the power dissipation is 95 mW under a 3.5 V supply.

Design of a distributed power amplifier based on T-type matching networks

The impedance characteristics of distributed amplifiers are analyzed based on T-type matching networks, and a distributed power amplifier consisting of three gain cells is proposed. Non-uniform T-type matching networks are adopted to make the impedance of artificial transmission lines connected to the gate and drain change stage by stage gradually, which provides good impedance matching and improves the output power and efficiency. The measurement results show that the amplifier gives an average forward gain of 6 dB from 3 to 16. 5 GHz. In the desired band, the input return loss is typically less than - 9. 5 dB, and the output return loss is better than -8.5 dB. The output power at 1-dB gain compression point is from 3.6 to 10. 6 dBm in the band of 2 to 16 GHz while the power added efficiency （PAE） is from 2% to 12. 5% . The power consumption of the amplifier is 81 mW with a supply of 1.8 V, and the chip area is 0.91 mm × 0.45 mm.

Novel hybrid optimal algorithm for broad-band Raman amplifier

A hybrid optimal algorithm, named the SAA-PA in brief, based on the simulated annealing algorithm （SAA） and the Powell algorithm （PA） is proposed. The proposed algorithm puts the random search strategy of the SAA into the PA, which can prevent optimizing courses from trapping in local optima. The SAA-PA can effectively solve multimodal optimization in the distributed multi-pump Raman amplifier （DMRA）. Optimal results show that, under the conditions of the on-off gain of 10 dB, the gain bandwidth of larger than 80 nm and the fiber length of 80 km, the gain ripple of less than 1.25 dB can be designed from the DMRA with only four backward pumps after the optimization of the proposed SAA-PA. Compared with the pure SAA, the SAA-PA can attain a lower gain ripple with the same number of pumps. Also, the relationship between the optimal signal bandwidth and the number of pumps can be simulated numerically with the SAA-PA.

Amplification Effect on Rayleigh Scattering and SBS in 25 km Distributed Fiber Raman Amplifier

The amplification effect on stimulated Brillouin scattering （SBS） and Rayleigh scattering in the backward pumped G652 fibers Raman amplifier have been researched. The signal source is a tunable narrow spectral bandwidth （〈10 MHz） ECL laser and is pumped by the tunable power 1427.2 nm fiber Raman laser. The Rayleigh scattering lines are amplified by fiber Raman amplifier, and Stokes stimulated Brillouin scattering lines are amplified by fiber Raman amplifier and fiber Brillouin amplifier. The SBS lines total gain is a production of the gain of Raman and the gain of Brillouin amplifier. In experiment, the gain of SBS is about 42 dB and the saturation gain of 25 Ion G652 backward FRA is about 25 dB, so the gain of fiber Brillouin amplifier is about 17 dB.

Effect of stimulated Brillouin scattering on the gain saturation of distributed fiber Raman amplifier and its suppression by phase modulation

For distributed fiber Raman amplifiers（DFRAs）, stimulated Brillouin scattering（SBS） can deplete the pump once occurring and consequently generate gain saturation. On the basis of such a theory, theoretical gain saturation powers in DFRAs with various pump schemes are obtained by calculating SBS thresholds in them, and the experimental results show that they are in excellent agreement with the calculation results. The saturation power of the DFRA with a 300 m W forward pump is as low as 0 d Bm, which needs to be enhanced by phase modulation, and the effect is quantitatively studied. A simple model taking both modulation frequency and index into consideration is presented by introducing a correction factor to evaluate the effect of phase modulation on the enhancement of saturation power. Experimentally, it is shown that such a correction factor decreases as the modulation frequency increases and approaches zero when the modulation frequency becomes high enough. In particular, a phase modulation with a modulation frequency of 100 MHz and a modulation index of 1.380 can enhance the saturation power by 4.44 d B, and the correction factor is 0.25 d B, in which the modulation frequency is high enough. Additionally, the factor is 1.767 d B for the modulation frequency of 25 MHz. On this basis,phase modulations with various indexes and a fixed frequency of 25 MHz are adopted to verify the modified model, and the results are positive. To obtain the highest gain saturation power, the model is referable. The research results provide a guide for the design of practical DFRAs.

Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs

Low noise distributed amplifiers （DAs） using the novel low noise composite-channel Al0.3 Ga0.7N/ml0.05 Ga0.95 N/ GaN HEMTs （CC-HEMTs） with 1μm-gate-length are designed and fabricated. Simulated and measured results of the DAs are characterized. The measured results show that the low noise DAs have input and output VSWR （voltage standing wave ratio） of less than 2.0,associated gain of more than 7.0dB and gain ripple of less than ldB in the frequency range from 2 to 10GHz. Noise figure of the DAs is less than 5dB in the frequency range from 2 to 6GHz,and less than 6.5dB in the frequency range from 2 to 10GHz. The measured results agree well with the simulated ones.

Design of a low noise distributed amplifier with adjustable gain control in 0.15μm GaAs PHEMT

A low noise distributed amplifier consisting of 9 gain cells is presented.The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor（PHEMT） technology from Win Semiconductor of Taiwan.A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB.A novel cascode structure is adopted to extend the output voltage and bandwidth.The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of±1 dB in the 2-20 GHz band.The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz.The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point（IIP3）,which demonstrates the excellent performance of linearity.The power consumption is 300 mW with a supply of 5 V,and the chip area is 2.36×1.01 mm^2.

On the Mitigation of Polarization Dependency of Distributed Raman Amplifier Gain by Transmission Fiber PMD

We show theoretically and experimentally that Raman PDG can be formulated as a function of the pump light DOP and the transmission fiber PMD. Raman PDG is sufficiently reduced thanks to the inevitable fiber PMD.

Efficient Design and Optimization Method for Distributed Amplifiers

A novel design and optimization method for distributed amplifiers(DAs)is proposed to make the circuit design more convenient and efficient.This method combines artificial intelligence(AI)optimization with manual design by two loops,i.e.,outer manual loop and inner AI loop.The layout design is followed by AI optimization to take more influencing factors such as parasitic effect into account for the practicability.A DA with three gain cells is designed and optimized in a standard 0.18μm complementary metal-oxide-semiconductor(CMOS)technology to verify the proposed method.With a chip area of only 0.55 mm2,the DA provides 9.8 dB average forward gain from 1 to 15.2 GHz.The output power at 1 dB output compression point is more than 7.7 dBm in the 2-14 GHz frequency band and the peak power-added efficiency(PAE)is 10.6%.The measurement results validate the proposed method as a robust DA design procedure for improving circuit performance and design efficiency.

Design of 20-44 GHz broadband doubler MMIC

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2.