A new fit of the pion parton distribution functions is provided. Only valence quark distributions are used at a low evolution scale and are evolved with the modified Dokshitzer- Gribov-Lipatov-Altarelli-Parisi equatio...A new fit of the pion parton distribution functions is provided. Only valence quark distributions are used at a low evolution scale and are evolved with the modified Dokshitzer- Gribov-Lipatov-Altarelli-Parisi equation which is briefly introduced in this work, and the sea quark and gluon distributions are only generated by the quantum chromodynamics processes. We find that the patton distributions can explain the pion-nucleon experiments data well, and it can also be compared with the data from the leading neutron data of experiments at HERA. The momentum distributions among the partons are discussed and our results are consistent with some models.展开更多
The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS）...The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.展开更多
文摘A new fit of the pion parton distribution functions is provided. Only valence quark distributions are used at a low evolution scale and are evolved with the modified Dokshitzer- Gribov-Lipatov-Altarelli-Parisi equation which is briefly introduced in this work, and the sea quark and gluon distributions are only generated by the quantum chromodynamics processes. We find that the patton distributions can explain the pion-nucleon experiments data well, and it can also be compared with the data from the leading neutron data of experiments at HERA. The momentum distributions among the partons are discussed and our results are consistent with some models.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51337002,51077028,51502063 and 51307046the Foundation of Harbin Science and Technology Bureau of Heilongjiang Province under Grant No RC2014QN017034
文摘The distributions of traps and electron density in the interfaces between polyimide （PI） matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering （SAXS） tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.
