Sulfur Distribution and Transport Studies in East Asia Using Eulerian Model

A three-dimensional regional Eulenan model of sulfur deposition and transport is developed.Processes treated in the model include emission,transport,diffusion,gas-phase and aqueous-phase chemical process,dry deposition,ramout and washout of sulfur.A 'looking up table' method is provided to deal with the gas-phase chemical process including sulfur transfer Dry-depositon velocity considers the influence of underlying surface,wind,degree of stability by parameterization Model calculated values reasonably agrees with observation.Distribution of sulfur deposition and transport in East Asia are also analyzed in this paper Some amount of sulfur emission of different countries transport across boundaries,but the main origin of sulfur deposition in each country in East Asia is from itself.Furthermore.some transport paths on different layers and outlet or inlet zones are found.According to sulfur balance and budget we concluded that sulfur outlets are bigger than inlets across boundary and emissions are more than deposition in most places of East Asia

Simulation Study on the Interannual Variation of the Transport and Distribution of Chub Mackerel (Scomber japonicus) Larvae and Juveniles Using Individual-Based Model

An individual-based model of Scomber japonicus in the East China Sea(ECS)was developed to simulate the effects of physical environment on the transport and distribution of eggs,larvae and juveniles of S.japonicus from 1978 to 2013.The results showed that there were interannual differences in the transport and distribution of eggs,larvae and juveniles of S.japonicus in the ECS due to different physical environments from 1978 to 2013,and this difference was extremely obvious in some specific years.The current in the drift path of eggs and juveniles controlled and affected the transport process and distribution characteristics.In April,the distribution of eggs and larvae was mainly controlled by the Taiwan Warm Current(TWC).The number of eggs and larvae transported into the northeastern waters of the ECS was positively correlated with the intensity of TWC.In May,it was mainly regu-lated by the TWC and the Tsushima Strait Warm Current(TSWC).In June,the number of larvae and juveniles entering the Tsushima Strait and the Pacific Ocean was determined by the TSWC.In general,in the years with high number of larvae and juveniles into the Tsushima Strait,the catch of 0-year-old S.japonicus was also higher.In addition,the number of larvae and juveniles entering the Tsushima Strait in El Niño years was less than that in La Niña years.In July,the transport was mainly controlled by the Kuroshio Current(KC),and the eddy within the KC strongly affected its distribution.

Effect of Nickel Distributions Embedded in Amorphous Carbon Films on Transport Properties

Electrical properties of C/Ni films are studied using four mosaic targets made of pure graphite and stripes of nickel with the surface areas of 1.78,3.21,3.92 and 4.64%.The conductivity data in the temperature range of400-500 K shows the extended state conduction.The conductivity data in the temperature range of 150-300 K shows the multi-phonon hopping conduction.The Berthelot-type conduction dominates in the temperature range of 50-150 K.The conductivity of the films in the temperature range about 〈 50 K is described in terms of variable-range hopping conduction.In low temperatures,the localized density of state around Fermi level（F）for the film deposition with 3.92% nickel has a maximum value of about 56.2×10^（17）cm^（-3）eV^（-1） with the minimum average hopping distance of about 3.43 × 10^（-6） cm.

Effects of thermal transport properties on temperature distribution within silicon wafer

A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.

Study on numerical simulation of organic pollutant transport in groundwater northwest of Laixi

The construction and hydrogeological area in the low hill, which is northwest of Laixi City and in the east of Shandong Province more precisely, is one of Dagu River's groundwater source. Regarding COD as the typical pollutant according to general situation of groundwater pollution in aforementioned area, a three-dimensional advection-dispersion model was established to simulate the transport of organic pollutants under two accident conditions. In addition, the effect of corresponding dispersity was analyzed. The results show that COD transport is mainly in accordance with the direction of groundwater flow, pollutant concentration and its gradient as well as the rule of narrower pollution range in deeper stratum. Moreover, COD is mainly transported and diffused in groundwater of sandy soil in the first and second layers. However, under accident condition II, the pollutant concentration begins to decay gradually after its transport and diffusion tends to be stable. Besides, in terms of dominance, dispersion is to transverse transport of pollutants what advection is to longitudinal transport. If considering random dispersion, the final results see higher peak concentration of COD and longer transverse distance from pollution center compared to transport route. What's more, the pollution plume changes and concentration isocline becomes slightly irregular.

CFD simulation of effect of anode configuration on gas–liquid flow and alumina transport process in an aluminum reduction cell

Numerical simulations of gas–liquid two-phase flow and alumina transport process in an aluminum reduction cell were conducted to investigate the effects of anode configurations on the bath flow, gas volume fraction and alumina content distributions. An Euler–Euler two-fluid model was employed coupled with a species transport equation for alumina content. Three different anode configurations such as anode without a slot, anode with a longitudinal slot and anode with a transversal slot were studied in the simulation. The simulation results clearly show that the slots can reduce the bath velocity and promote the releasing of the anode gas, but can not contribute to the uniformity of the alumina content. Comparisons of the effects between the longitudinal and transversal slots indicate that the longitudinal slot is better in terms of gas–liquid flow but is disadvantageous for alumina mixing and transport process due to a decrease of anode gas under the anode bottom surface. It is demonstrated from the simulations that the mixing and transfer characteristics of alumina are controlled to great extent by the anode gas forces while the electromagnetic forces(EMFs) play the second role.

Spatial batch optimal design based on self-learning Gaussian process models for LPCVD processes

Low pressure chemical vapor deposition(LPCVD) is one of the most important processes during semiconductor manufacturing.However,the spatial distribution of internal temperature and extremely few samples makes it hard to build a good-quality model of this batch process.Besides,due to the properties of this process,the reliability of the model must be taken into consideration when optimizing the MVs.In this work,an optimal design strategy based on the self-learning Gaussian process model(GPM) is proposed to control this kind of spatial batch process.The GPM is utilized as the internal model to predict the thicknesses of thin films on all spatial-distributed wafers using the limited data.Unlike the conventional model based design,the uncertainties of predictions provided by GPM are taken into consideration to guide the optimal design of manipulated variables so that the designing can be more prudent Besides,the GPM is also actively enhanced using as little data as possible based on the predictive uncertainties.The effectiveness of the proposed strategy is successfully demonstrated in an LPCVD process.

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights（BH） of as-deposited and 200 ℃ annealed SBDs are 0.80 eV（I-V）/0.93 eV（C-V） and 0.87 eV（I-V）/1.03 eV（C-V）. However, the BH rises to 0.99 eV（I-V）/1.18 eV（C-V）and then slightly deceases to 0.92 eV（I-V）/1.03 eV（C-V） after annealing at 300 ℃ and 400 ℃. The utmost BH is attained after annealing at 300 ℃ and thus the optimum annealing for SBD is 300 ℃. By applying Cheung＇s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung＇s and ΨS-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the NSS decreases up to 300 ℃ annealing and then slightly increases after annealing at 400 ℃. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.