In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in A1GaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving th...In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in A1GaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.展开更多
In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized,...In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate–drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD=10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.展开更多
In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN...In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (VRB) and the forward blocking voltage (VFB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from -67 V and 134 V to -653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.展开更多
To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(S...To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional(2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions(SJ) or semisuperjunctions(semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage(BV) and the specific on-resistance(R_(on)A).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration(N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_(on)A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_(on)A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.展开更多
To solve the engineering and scientific problems in construction diversion and its simulation analysis, a complete scheme is presented. Firstly, the complex constraint relationship was analyzed among main buildings, d...To solve the engineering and scientific problems in construction diversion and its simulation analysis, a complete scheme is presented. Firstly, the complex constraint relationship was analyzed among main buildings, diversion buildings and flow control. Secondly, the time-space relationship model of construction diversion system and the general block diagram-oriented simulation model of diversion process were set up. Then, the corresponding numerical simulation method and 3D dynamic visual simulation method were put forward. Further, the simulation and optimization platform of construction diversion control process was developed, integrated with simulation modeling, computation and visualization. Finally, these methods were applied to a practical project successfully, showing that the modeling process is convenient, the computation and the visual analysis can be coupled effectively, and the results conform to practical state. They provide new theoretical principles and technical measures for analyzing the control problems encountered in construction diversion of hydraulic and hydroelectric engineering under complex conditions.展开更多
Managed open landfill sites can serve as crucial feeding grounds for birds. Studies have demonstrated that garbage dumps offer favorable feeding habitats for various trophic generalist species, including storks and sc...Managed open landfill sites can serve as crucial feeding grounds for birds. Studies have demonstrated that garbage dumps offer favorable feeding habitats for various trophic generalist species, including storks and scavenger raptors. This study aimed to assess bird diversity and abundance in and around Tayba Al Hasanab Landfill, Khartoum. A bird census was conducted using block counts in January 2021. A questionnaire complemented field observations, and interviews were conducted with landfill authorities and waste collectors to gather information on bird availability, numbers, and diversity. During the block counts, 23 bird species were recorded inside and around the landfill. These species directly relied on food resources available at and around the landfill, belonging to 8 orders and 11 families. The four most abundant species foraging at the landfill were Sparrow House (Passer domesticus) with 97 individuals, Black kite (Milvus migrans) with 67 individuals, cattle egret (Bubulcus ibis) with 42 individuals, and Laughing Dove (Spilopelia senegalensis) with 36 individuals. This suggests that these species are the primary exploiters of food resources at the landfill. The results indicate that all species are considered least concerned except the Egyptian Vulture (Neophron percnopterus), which is classified as endangered. Most of the interviewed individuals reported seeing birds in the study area. The study recorded instances of dead birds, such as a white stork colliding and being electrocuted with a transition line observed at different sites along transmission lines near the landfill. Surveys around Tayba landfill need to be conducted to identify deadly power lines for replacement or implement possible mitigation measures on power lines running parallel and close to the Tayba landfills. The avian community foraging at the landfill displayed fluctuations in abundance and interspecific interactions across seasons. Given that the substantial influx of birds to landfills can pose various environmental challenges in urban settings, this study underscores the significance of examining the seasonal dynamics of bird communities concerning the location and management of landfills.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)
文摘In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in A1GaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.
基金Project supported by the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915)the National Natural Science Foundation of China(Grant No.61204085)
文摘In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate–drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD=10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.
基金supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)
文摘In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (VRB) and the forward blocking voltage (VFB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from -67 V and 134 V to -653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61306017,61474091,and 61574110)the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.605119425012)
文摘To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional(2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions(SJ) or semisuperjunctions(semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage(BV) and the specific on-resistance(R_(on)A).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration(N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_(on)A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_(on)A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.
基金Supported by the National Basic Research Program of China("973"Program)(Grant No.2007CB714101)the National Key Technology R&D Program in the11th Five year Plan of China(Grant No.2006BAB04A13)the National Science Fund for Distinguished Young Scholars of China(Grant No.50525927)
文摘To solve the engineering and scientific problems in construction diversion and its simulation analysis, a complete scheme is presented. Firstly, the complex constraint relationship was analyzed among main buildings, diversion buildings and flow control. Secondly, the time-space relationship model of construction diversion system and the general block diagram-oriented simulation model of diversion process were set up. Then, the corresponding numerical simulation method and 3D dynamic visual simulation method were put forward. Further, the simulation and optimization platform of construction diversion control process was developed, integrated with simulation modeling, computation and visualization. Finally, these methods were applied to a practical project successfully, showing that the modeling process is convenient, the computation and the visual analysis can be coupled effectively, and the results conform to practical state. They provide new theoretical principles and technical measures for analyzing the control problems encountered in construction diversion of hydraulic and hydroelectric engineering under complex conditions.
文摘Managed open landfill sites can serve as crucial feeding grounds for birds. Studies have demonstrated that garbage dumps offer favorable feeding habitats for various trophic generalist species, including storks and scavenger raptors. This study aimed to assess bird diversity and abundance in and around Tayba Al Hasanab Landfill, Khartoum. A bird census was conducted using block counts in January 2021. A questionnaire complemented field observations, and interviews were conducted with landfill authorities and waste collectors to gather information on bird availability, numbers, and diversity. During the block counts, 23 bird species were recorded inside and around the landfill. These species directly relied on food resources available at and around the landfill, belonging to 8 orders and 11 families. The four most abundant species foraging at the landfill were Sparrow House (Passer domesticus) with 97 individuals, Black kite (Milvus migrans) with 67 individuals, cattle egret (Bubulcus ibis) with 42 individuals, and Laughing Dove (Spilopelia senegalensis) with 36 individuals. This suggests that these species are the primary exploiters of food resources at the landfill. The results indicate that all species are considered least concerned except the Egyptian Vulture (Neophron percnopterus), which is classified as endangered. Most of the interviewed individuals reported seeing birds in the study area. The study recorded instances of dead birds, such as a white stork colliding and being electrocuted with a transition line observed at different sites along transmission lines near the landfill. Surveys around Tayba landfill need to be conducted to identify deadly power lines for replacement or implement possible mitigation measures on power lines running parallel and close to the Tayba landfills. The avian community foraging at the landfill displayed fluctuations in abundance and interspecific interactions across seasons. Given that the substantial influx of birds to landfills can pose various environmental challenges in urban settings, this study underscores the significance of examining the seasonal dynamics of bird communities concerning the location and management of landfills.