High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than...High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...展开更多
Er-doped Sm1-xErx(CobalFe0.15Cu0.08Zr0.03)7.8(x=0,0.1,0.2,0.3)magnets with a low remanence temperature coefficient were prepared by powder metallurgy method.The influence of Er content on the remanence and microstruct...Er-doped Sm1-xErx(CobalFe0.15Cu0.08Zr0.03)7.8(x=0,0.1,0.2,0.3)magnets with a low remanence temperature coefficient were prepared by powder metallurgy method.The influence of Er content on the remanence and microstructure was investigated.X-ray diffractometer(XRD)analysis showed that the magnets with different Er contents consist of 2:17 R phase and 1:5 H phase.Scanning electron microscopy(SEM)analysis showed that the composition of the matrix is consistent with stoichiometric composition and no obvious precipitated phase appears.With the increase in doped Er amount,the temperature stability of Sm1-xErx(CobalFe0.15Cu0.08Zr0.03)7.8(x=0,0.1,0.2,0.3)is getting better.When x is up to 0.3,the magnets with a low remanence temperature coefficient are obtained and the remanence descends tardily from 0.86 to 0.80 T as the temperature rises from room temperature to 400℃.These results indicate that Er substitution for Sm in SmCobased permanent magnets together with optimal composition and proper heat treatment could achieve a desired magnetic performance combined with high thermal stability.展开更多
A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross structure.By exchangi...A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross structure.By exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear region.As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD process.Simulation shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition.展开更多
基金Supported by Science and Technology Committee of Tianjin (No.06YFGPGX08400)Ministry of Science and Technology of China (No.2009GJF20022)Innovation Fund of Tianjin University
文摘High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 ty...
基金financially supported by the National Natural Science Foundation of China(Nos.51761145026 and 51471016)the Beijing Natural Science Foundation(No.2151002).
文摘Er-doped Sm1-xErx(CobalFe0.15Cu0.08Zr0.03)7.8(x=0,0.1,0.2,0.3)magnets with a low remanence temperature coefficient were prepared by powder metallurgy method.The influence of Er content on the remanence and microstructure was investigated.X-ray diffractometer(XRD)analysis showed that the magnets with different Er contents consist of 2:17 R phase and 1:5 H phase.Scanning electron microscopy(SEM)analysis showed that the composition of the matrix is consistent with stoichiometric composition and no obvious precipitated phase appears.With the increase in doped Er amount,the temperature stability of Sm1-xErx(CobalFe0.15Cu0.08Zr0.03)7.8(x=0,0.1,0.2,0.3)is getting better.When x is up to 0.3,the magnets with a low remanence temperature coefficient are obtained and the remanence descends tardily from 0.86 to 0.80 T as the temperature rises from room temperature to 400℃.These results indicate that Er substitution for Sm in SmCobased permanent magnets together with optimal composition and proper heat treatment could achieve a desired magnetic performance combined with high thermal stability.
文摘A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross structure.By exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear region.As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD process.Simulation shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition.
