Structural, Optical and Photocatalytic Properties of Cu2+ Doped ZnO Nanorods with Using HMTA Solvent Prepared by Hydrothermal Method

In this experiment, Cu2+ doped ZnO (Cu-ZnO) nanorods materials have been fabricated by hydrothermal method. Cu2+ ions were doped into ZnO with ratios of 2, 5 and 7 mol.% (compared to the mole’s number of Zn2+). The hexamethylenetetramine (HMTA) solvent used for the fabrication of Cu-ZnO nanorods with the mole ratio of Zn2+:HMTA = 1:4. The characteristics of the materials were analyzed by techniques, such as XRD, Raman shift, SEM and UV-vis diffuse reflectance spectra (DRS). The photocatalytic properties of the materials were investigated by the decomposition of the methylene blue (MB) dye solution under ultraviolet light. The results show that the size of Cu-ZnO nanorods was reduced when the Cu2+ doping ratio increased from 2 mol.% to 7 mol.%. The decomposition efficiency of the MB dye solution reached 92% - 97%, corresponding to the Cu2+ doping ratio changed from 2 - 7 mol.% (after 40 minutes of ultraviolet irradiation). The highest efficiency for the decomposition of the MB solution was obtained at a Cu2+ doping ratio of 2 mol.%.

ZnO微米棒基质中铕离子的偏振敏感发光特性

针对基质晶格各向异性对稀土离子偏振发光特性的影响,采用水热法制备了ZnO微米棒及铕掺杂ZnO微米棒。对照研究发现,掺杂后的样品长径比增加,形貌由哑铃型转变为直微米棒。光学性质分析表明,385 nm处的束缚激子发光使得ZnO微米棒的紫外发光呈明显不对称线形,550 nm处观测到一个较弱的可见区发光。掺杂铕离子后,可见区域发光明显增强。对于Eu^(3+)离子掺杂ZnO微米棒,532 nm激发下可观测到窄半峰宽的Eu^(3+)离子特征发光峰。调节入射激发光的偏振方向时,Eu^(3+)离子发光峰强度随偏振光角度呈周期性变化,且发光偏振度随掺杂浓度的增加而增大。结果表明,借助ZnO微米棒基质晶格可获得对激发光偏振敏感的铕离子发光。掺杂ZnO微米棒能够将低维ZnO材料的紫外光吸收性能与稀土离子优异的可见发光特性进行整合,使其在偏振光谱探测等领域具有重要的应用价值。

Comparisons of ZnO codoped by group IIIA elements (Al,Ga,In) and N:a first-principle study

The electronic structures and effective masses of the N mono-doped and Al N, Ga-N, In-N codoped ZnO system have been calculated by a first-principle method, and comparisons among different doping cases are made. According to the results, the impurity states in the codoping cases are more delocalised compared to the N mono-doping case, which means a better conductive behaviour can be obtained by codoping. Besides, compared to the Al-N and Ga-N codoping cases, the hole effective mass of In-N codoped system is much smaller, indicating the p-type conductivity can be more enhanced by In N codoping

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum （FWHM） of their near-band-edge （NBE） emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

ZnO纳米颗粒掺杂对镍钛合金表面微弧氧化膜层形貌及性能的影响

针对镍钛合金在体内复杂生理环境的作用下受到腐蚀而释放大量镍离子的问题,向以NaAlO_(2)、C_(10)H_(14)N_(2)Na_(2)O_(8)、Na_(2)HPO_(4)·12H_(2)O为主要成分的电解液中添加ZnO纳米颗粒,通过微弧氧化技术在镍钛合金表面制备耐腐蚀陶瓷氧化膜层。采用帕累托法则和正态分布曲线分析ZnO纳米颗粒对氧化膜层孔隙率和孔隙尺寸的作用,通过SEM、EDS、电化学工作站以及水滴接触角来研究颗粒掺杂对氧化膜层微观形貌、化学组分、耐腐蚀性及润湿性能的影响。结果表明:颗粒掺杂后的氧化膜层更加平整致密,孔隙率下降65.3%,孔径平均值从0.518μm降至0.321μm;随着ZnO纳米颗粒的加入,复合膜层的O、Al、Zn含量增加,Ni含量下降,阻抗模值上升,动电位极化曲线明显地向右上方偏移,自腐蚀电位上升32.4%,而电流密度下降一个数量级。

Ga掺杂ZnO微米棒紫外光探测器的制备与特性

为了获得高性能和低成本的氧化锌(ZnO)基紫外光探测器,使用Ga掺杂ZnO(ZnO∶Ga)作为光敏层,采用水热法合成了不同Ga掺杂浓度ZnO∶Ga微米棒,Ga与Zn的原子比分别为0%(未掺杂),0.5%,1%,2%和4%。使用X射线衍射仪(XRD)测试所有样品的晶体结构,发现它们都为六方纤锌矿结构的ZnO。采用扫描电子显微镜(SEM)观察它们的形貌,都呈现棒状结构。进一步,制备叉指图案氟掺杂的氧化锡(FTO)导电玻璃基底,将不同Ga掺杂浓度ZnO∶Ga微米棒分别涂覆在FTO上,得到5种简单结构的紫外光探测器,系统研究了它们的性能。结果表明:所有ZnO∶Ga微米棒紫外光探测器对365 nm紫外光表现出良好的响应。其中,1%Ga掺杂ZnO∶Ga微米棒紫外光探测器性能最佳,经计算,在365 nm波长处,它的响应度、增益和比探测率分别为13.13 A/W(5 V),44.63(5 V),3.31×1012Jones,响应时间和衰减时间分别为12.3 s和36.4 s。说明在ZnO微米棒中进行合适Ga掺杂能有效提高紫外光探测器的性能。该研究有助于基于ZnO∶Ga材料的紫外光探测器及相关器件发展。

Room temperature ferromagnetism of Si-doped ZnO thin films prepared by sol-gel method

Pure ZnO and Si-doped ZnO thin films were deposited on quartz substrate by using sol-gel spin coating process. X-ray diffraction analysis shows that all the thin films have hexagonal wurtzite structure and preferred c-axis orientation. Si-doped ZnO films show room temperature ferromagnetism （RTFM） and reach the maximum saturation magnetization value of 1.54 kA.m at 3 % Si concentration. RTFM of Si-doped ZnO decreases with the increasing annealing temperature because of the formation of SiO2. Photoluminescence measurements suggest that the RTFM in Si-doped ZnO can be attributed to the defect complex related to zinc vacancies Vzn and oxygen interstitials O1.

Study on Desulfurization Efficiency and Products of Ce-Doped Nanosized ZnO Desulfurizer at Ambient Temperature

Ce-doped nanosized ZnO desulfurizer was prepared by homogeneous precipitation,and its desulfurization efficiency at ambient temperature was investigated through dynamic experiments.The results showed that the desulfurization activity of nanosized Ce-ZnO had improved greatly,compared to nanosized ZnO desulfurizer.Nanosized Ce-ZnO desulfurizer was characterized by XRD,TPD-MS,XPS,and TEM.The research results indicated that doping Ce decreased the particle size of the nanosized ZnO desulfurizer and ZnS was the principal desulfurization product.There were adsorption complexes of HS and S on the surface of desulfurizer as well.Only a small amount of vapor appeared in the tail gas on the condition of meeting the precision of desulfurization.

Performance and dynamics of nano-size ZnO doped with metallic elements for desulfurization at room temperature

The desulfurizer research is focused on transition-metal oxide.The paper had discussed in depth the desulfurization activity of nano-size ZnO doped with metallic elements.In order to improve the desulfurization activity of nano-desulfurizer,we prepared the nano-size ZnO desulfurizer doped with iron,nickel and copper ionic respectively,using homogeneous precipitation.At the same time,the effects of different doped elements on the desulfurization activity of nano-size ZnO were compared by removing the pollutant of H2S.The experimental results showed that the desulfurization activity of metallic elements-doped nano-size ZnO increased significantly.When the molar ratio of Fe/Zn is 5:100(FZ5.0) and Cu/Zn is 2:100(CuZ2.0),their sulfur contents are 5.3% and 5.6% respectively.These desulfurizers can reach better desulfurization activity than that doped with nickel.Further research showed that,for CuZ2.0,the primary desulfurization activity is better than that of FZ5.0,but the regeneration temperature is as high as 570 ℃,and after three times regeneration/sulfuration cycle tests,the desulfurization activity decreases obviously.However,FZ5.0 can be recycled 5 times continuously at 370℃ with a stable desulfurization activity.In view of the better regeneration/sulfuration performance of FZ5.0,the dynamics of the removing H2S process by FZ5.0 were further studied.The result showed that the reaction order of removing H2S by FZ5.0 is 0.96385 at 25 ℃.

Mn掺杂ZnO材料的制备与热致变色性能研究

用固相反应法制备不同Mn掺杂比的ZnO粉体(Zn_(1-x)Mn_(x)O),用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、紫外/可见/近红外漫反射测试仪(UV-Vis)、X射线光电子能谱仪(XPS)对样品的成分结构、微观形貌等进行表征。结果表明:当Mn的摩尔分数<7%时,Mn能完全进入ZnO晶格,不会引起ZnO六方纤锌矿结构的改变;当Mn的摩尔分数≥7%时会形成杂质相,且Mn掺杂比增大,破坏了ZnO晶体结构的完整性。常温下,Mn的摩尔分数为1%的ZnO粉体的颜色为蜜柑色,随掺杂比例增大,颜色逐渐变深。此外,当测试温度从常温升至400℃时,样品颜色由蜜柑色变为灰茶色,当冷却到常温时,样品的颜色又恢复到原色,具有颜色可逆性。

ZnO:Na纳米晶室温表面光电压气敏机理的研究

采用简单溶胶凝胶法在溅射有Au/Ti叉指电极的PET柔性基底上制备出不同Na掺杂浓度的ZnO纳米晶。通过对样品的微结构和光学性质表征,探究光辅助室温NO_(2)气敏机理与表面光电压之间的联系。X射线衍射(XRD)结果显示所有样品均为六方纤锌矿结构,Na的掺杂并没有出现Na及其氧化物的衍射峰。室温气敏测试结果显示Na掺杂ZnO纳米晶具有优良的室温气敏性能,能够检测到0.94 mg/m^(3)浓度的NO_(2),相对于纯ZnO纳米晶体气敏响应明显提高。表面光电压谱(SPV)和紫外可见分光光度计(UV-Vis)实验结果表明掺杂ZnO样品的室温气敏性可能与其表面缺陷含量和缺陷能级有关。Na掺杂能够显著增强光生电荷的分离,同时也引入了更多的氧空位(Vo)和活性位点,促进了NO_(2)气体与表面吸附电离氧缺陷的反应。另外光学带隙的蓝移和新产生的缺陷能级也进一步提高了对NO_(2)气体的灵敏度。

Difference in magnetic properties between Co-doped ZnO powder and thin film

This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2＋ ions are homogeneously incorporated into ZnO lattice without forming secondary phases.The distinct difference between film and powder sample is the c-axis （002） preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour.

Defects Energetics and Electronic Properties of Li Doped ZnO： A Hybrid Hartree-Fock and Density Functional Study

有各种各样的缺点的做 Li 的 ZnO 的电子性质和稳定性被用混合 Hartree-Fock 和密度经由第一原则的计算计算电子结构和缺点形成精力学习了功能的方法。从形成精力计算的结果证明李对建筑群在大多数情形有最低形成精力，他们在李消费大多数李内容做了 ZnO，它使 p 类型传导力难获得。李对建筑群的形成是主要障碍认识到在李的 p 类型传导力做了 ZnO。然而，当环境变化从， LiZn 的形成精力减少对 Zn 富有 O 富有并且在高度 O 富有的环境变得比 Li 对建筑群的更稳定。因此， p 类型传导力能被李获得种的做的 ZnO 或柱子在氧富人空气退火了。

Synthesis and Optical Properties of Ce-doped ZnO

ZnO nanorods were synthesized using the sol-gel method, and the effects of annealing temperature and Ce doping on the morphologies and optical properties of ZnO nanostructures were investigated in detail. The XRD measurements showed that the as-synthesized ZnO nanostructures had a hexagonal wurtzite structure. SEM images showed that uniform nanorods formed at 900 °C. Photoluminescence measurements showed an ultraviolet emission peak and a relatively broad visible light emission peak for the samples sintered at different temperatures. The UV emission peak bathochromically shifted when the annealing temperature rose from 850 to 1000 °C. Ce doping decreased the synthesized temperature of the ZnO nanorods to 500 °C, and the UV peaks hypsochromically shifted.

Mg掺杂ZnO电子结构与压电性能的第一性原理研究

采用第一性原理计算方法研究了掺杂不同Mg(r(Mg),摩尔比)的ZnO材料的电子结构与压电性能。研究发现,随着r(Mg)的增加,ZnO晶格常数c与a的比值(c/a)减小,材料禁带宽度增大。当r(Mg)=0.3时,其带隙达到最大值(为1.493 eV)。态密度与差分电荷密度计算结果表明,其带隙增大的原因是导带中Zn-3d态向高能端移动。Mg的引入有助于提升ZnO材料的压电性能,其压电系数从本征的1.30272 C/m^(2)提升至1.35588 C/m^(2),压电系数的提高可能来源于四方因子c/a数值减小引起的结构畸变。

Ag掺杂ZnO微纳米结构的制备及发光特性

采用微波水热法在80~140℃的生长温度下合成了一系列银(Ag)掺杂的氧化锌(ZnO)样品,掺杂液中Ag^(+)质量分数分别为0、0.2%、0.5%和1%,并采用X射线衍射(XRD)、扫描电镜(SEM)、室温荧光(PL)等方法详细研究了Ag的掺杂对ZnO的结构、形貌和光学性能的影响。XRD结果显示,在低温条件下,高浓度Ag掺杂的ZnO结晶质量最好,而在高温条件下,纯ZnO的结晶质量优于Ag掺杂样品;SEM结果表明,ZnO为空心纳米结构,纯ZnO样品随着温度的升高,样品的形貌由中空的棒状结构逐渐转化为多层的片状结构,而随着Ag掺杂浓度的增加,中空的六方柱状结构逐渐解体,样品颗粒减小,这一现象符合介孔形成的基本理论——柯肯达尔效应;PL光谱表明,随着Ag掺杂浓度的增大,ZnO的可见光发光强度呈现出先增强后减弱的趋势,能带的带隙则逐渐变窄。Ag的掺杂浓度和样品生长温度对于ZnO的结构、形貌和光学性能起了关键性作用。

Synthesis of high-TC ferromagnetic Mn-doped ZnO nanorods by thermal evaporation

This paper reports that a large amount of Mn-doped ZnO nanorods have been synthesized through thermal evaporation. The morphologies and properties are studied with x-ray diffraction, a scanning electron microscope, transmission electron microscope and Raman spectroscope. The results indicate that the manganese atoms occupy the zinc vacancies in the wurtzite lattice of ZnO without forming secondary phases. The exact manganese content has been studied by the x-ray fluorescence spectrum. Meanwhile, the magnetic moment versus temperature result proves that the as-prepared Mn-doped ZnO nanorods show ferromagnetic properties at temperatures as high as 400~K. These studies provide a good understanding of the origin of magnetic properties in diluted magnetic semiconductors.

Effects of temperature and Nickel content on magnetic properties of Ni-doped ZnO

Magnetic properties of diluted magnetic semiconductors (DMSs), Ni-doped ZnO materials, prepared by sol-gel method were investigated by measuring magnetization as functions of magnetic field. The Ni content affects the magnetic properties at low sintered temperature but it has few effects on the magnetic properties at high sintered temperature. The sintered temperature has great effects on the magnetic properties of Ni/ZnO at high original mole ratio of Ni/Zn while it has slight effects on the magnetic properties of Ni/ZnO at low original mole ratio of Ni/Zn whatever low or high sintered temperature.

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy （doping electrons） might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.