Cu/W multilayer nanofilms are prepared in pure Ar and He/At mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are char...Cu/W multilayer nanofilms are prepared in pure Ar and He/At mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy. The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanofilms. With the increasing natural storage time, He located in the near surface of the Cu//W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects. However, more He in the deep region spread along the interface of the Cu/W multilayer nanofilm. Meanwhile, the layer interfaces can still maintain their stability.展开更多
By using a combined method of density functional theory and non-equilibrium Green＇s function formalism,we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons（APNRs）.The ...By using a combined method of density functional theory and non-equilibrium Green＇s function formalism,we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons（APNRs）.The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal.Meanwhile,obvious negative differential resistance（NDR） behaviors are obtained by tuning the doping position and concentration.In particular,with reducing doping concentration,NDR peak position can enter into m V bias range.These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11275132,51171124 and 11505121the International Science and Technology Cooperation Program of China under Grant No 2014DFR50710the Scientific and Technical Supporting Programs Funded by the Science and Technology Department of Sichuan Province under Grant No 2014GZ0004
文摘Cu/W multilayer nanofilms are prepared in pure Ar and He/At mixing atmosphere by the rf magnetron sputtering method. The cross-sectional morphology and the defect distribution of the Cu/W multilayer nanofilms are characterized by scanning electron microscopy and Doppler broadening positron annihilation spectroscopy. The results show that plenty of point defects can be produced by introducing He during the growth of the multilayer nanofilms. With the increasing natural storage time, He located in the near surface of the Cu//W multilayer nanofilm at room temperature could be released gradually and induce the segregation of He-related defects due to the diffusion of He and defects. However, more He in the deep region spread along the interface of the Cu/W multilayer nanofilm. Meanwhile, the layer interfaces can still maintain their stability.
基金Project supported by the National Natural Science Foundation of China(No.11274096)the University Science and Technology Innovation Team Support Project of Henan Province(No.13IRTSTHN016)+1 种基金the University key Science Research Project of Henan Province(No.16A140043)supported by the High Performance Computing Center of Henan Normal University
文摘By using a combined method of density functional theory and non-equilibrium Green＇s function formalism,we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons（APNRs）.The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal.Meanwhile,obvious negative differential resistance（NDR） behaviors are obtained by tuning the doping position and concentration.In particular,with reducing doping concentration,NDR peak position can enter into m V bias range.These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs.
