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DOPING LEVEL INCREASE OF POLY(3-METHYLTHIOPHENE)FILM DURING ELECTROCHEMICAL POLYMERIZATION PROCESS
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作者 Jing-kun Xu Gao-quan Shi +1 位作者 Feng-en Chen Xiao-yin Hong Department of Chemistry and Bio-organic Phosphorous Chemistry Laboratory Tsinghua University Beijing 100084, China 《Chinese Journal of Polymer Science》 SCIE CAS CSCD 2002年第5期425-430,共6页
The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have been electrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in... The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have been electrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in boron trifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated by excitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film was increasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bands assigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm(-1), respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrations increase with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach to improving the doping level of as-grown thin compact PMeT film. 展开更多
关键词 poly(3-methylthiophene) Raman spectra doping level radical cations DICATIONS
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Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes
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作者 Mahamadi Savadogo Adama Ouedraogo +3 位作者 Boubacar Soro Zi Daouda Koudougou Martial Zoungrana Issa Zerbo 《Energy and Power Engineering》 CAS 2022年第10期523-540,共18页
The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the b... The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 10<sup>13</sup> cm<sup>-3</sup> - 10<sup>16</sup> cm<sup>-3</sup>, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination. 展开更多
关键词 Moderate Light Concentration doping level High Injection Diffusion Parameters Conversion Efficiency
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Influence of solvent on ion conductivity of polybenzimidazole proton exchange membranes for vanadium redox flow batteries
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作者 Yahui Wang Kaimin Feng +2 位作者 Liming Ding Lihua Wang Xutong Han 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2020年第6期1701-1708,共8页
Polybenzimidazole(PBI)is a kind of proton transport membrane material,and its ion conductivity is a key factor affecting its application in vanadium redox flow batteries(VRFBs).The casting solvent of PBI has a signifi... Polybenzimidazole(PBI)is a kind of proton transport membrane material,and its ion conductivity is a key factor affecting its application in vanadium redox flow batteries(VRFBs).The casting solvent of PBI has a significant influence on the acid doping level of PBI membranes which is closely related to ionic conductivity.In this paper,3,3′-diaminobenzidine(DABz)and 4,4′-Dicarboxydiphenylether(DCDPE)were used as raw materials by solution condensation to prepare the PBI with ether bond groups.The chemical structure of PBI was determined by1H NMR and FT-IR,and the prepared PBI had good solubility which can be dissolved in a variety of solvents.The PBI proton exchange membranes were prepared by solution coating with 5 different solvents of N,N-dimethylformamide(DMF),N,N-dimethylacetamide(DMAc),dimethyl sulfoxide(DMSO),1-methyl-2-pyrrolidone(NMP),methane sulfonic acid(MSA).The effects of different solvents on the ion conductivity and physicochemical properties were discussed in detail.The results showed that the PBI membrane prepared by using MSA as solvent(the PBI+MSA membrane)exhibits high water uptake,acid doping level and low vanadium ion permeability.The VRFB assembled with the PBI+MSA membrane exhibited higher coulombic efficiency(CE)99.87%and voltage efficiency(VE)84.50%than that of the commercial Nafion115 membrane at100 m A·cm-2,and after 480 cycles,the EE value can still be maintained at 83.73%.The self-discharge time of a single battery was recorded to be as long as 1000 h.All experimental data indicated that MSA is the best solvent for casting PBI membrane. 展开更多
关键词 POLYBENZIMIDAZOLE SOLVENT Acid doping level Ion conductivity Proton exchange membrane Vanadium redox flow batteries
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