Although laser pumping using electron beam(EB)has high transient power output and easy modulation based on perovskite quantum dot(PQD)film,its lasing emitting direction is the same as the pumped EB's direction.Thu...Although laser pumping using electron beam(EB)has high transient power output and easy modulation based on perovskite quantum dot(PQD)film,its lasing emitting direction is the same as the pumped EB's direction.Thus,realizing the conventional direct device structure through the film lasing mechanism is extremely difficult.Therefore,using the random lasing principle,herein,we proposed a corona modulation device structure based on PQDs random laser pumped using an EB.We discussed and stimulated the optimized designed method of the device in terms of parameters of the electronic optical device and the utilization ratio of output power and its modulation extinction ratio,respectively.According to the simulation results,this type of device structure can effectively satisfy the new random lasing mechanism in terms of high-speed and high-power modulation.展开更多
基金supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.51602028,61905026,and 11874091)Jilin Province Science and Technology Development Project(Nos.20200301065RQ and 20190701024GH)+1 种基金Chinese Academy of Sciences(No.CAS-KLAOT-KF201803)Changchun University of Science and Technology(No.XJJLG-2017-01).
文摘Although laser pumping using electron beam(EB)has high transient power output and easy modulation based on perovskite quantum dot(PQD)film,its lasing emitting direction is the same as the pumped EB's direction.Thus,realizing the conventional direct device structure through the film lasing mechanism is extremely difficult.Therefore,using the random lasing principle,herein,we proposed a corona modulation device structure based on PQDs random laser pumped using an EB.We discussed and stimulated the optimized designed method of the device in terms of parameters of the electronic optical device and the utilization ratio of output power and its modulation extinction ratio,respectively.According to the simulation results,this type of device structure can effectively satisfy the new random lasing mechanism in terms of high-speed and high-power modulation.
