The self-assembled InAs/GaAs quantum dots （QDs） with extremely low density of 8× 10^6 cm^-2 are achieved using higher growth temperature and lower InAs coverage by low-pressure metal-organic chemical vapour dep...The self-assembled InAs/GaAs quantum dots （QDs） with extremely low density of 8× 10^6 cm^-2 are achieved using higher growth temperature and lower InAs coverage by low-pressure metal-organic chemical vapour deposition （MOVCD）. As a result of micro-photoluminescence （micro-PL）, for extremely low density of 8 × 10^6 cm^-2 InAs QDs in the micro-PL measurements at 10 K, only one emission peak has been achieved. It is believed that the InAs QDs have a good potential to realize single photon sources.展开更多
The main goal of this paper is to determine the accurate values of two parameters namely the surface generation–recombination rate and the average total number of electrons density generated in the i-region. These va...The main goal of this paper is to determine the accurate values of two parameters namely the surface generation–recombination rate and the average total number of electrons density generated in the i-region. These values will enhance the performance of quantum dot solar cells（QDSCs）. In order to determine these values, this paper concentrates on the optical generation lifetime, the recombination lifetime, and the effective density state in QDs. Furthermore, these parameters are studied in relation with the average total number of electrons density. The values of the surface generation–recombination rate are found to be negative, which implies that the generation process is dominant in the absorption quantum dot region. Consequently, induced photocurrent density relation with device parameters is determined. The results ensure that QDSCs can have higher response photocurrent and then improve the power conversion efficiency. Moreover, the peak value of the average total number of electrons density is achieved at the UV range and is extended to the visible range, which is adequate for space and ground solar applications.展开更多
文摘The self-assembled InAs/GaAs quantum dots （QDs） with extremely low density of 8× 10^6 cm^-2 are achieved using higher growth temperature and lower InAs coverage by low-pressure metal-organic chemical vapour deposition （MOVCD）. As a result of micro-photoluminescence （micro-PL）, for extremely low density of 8 × 10^6 cm^-2 InAs QDs in the micro-PL measurements at 10 K, only one emission peak has been achieved. It is believed that the InAs QDs have a good potential to realize single photon sources.
文摘The main goal of this paper is to determine the accurate values of two parameters namely the surface generation–recombination rate and the average total number of electrons density generated in the i-region. These values will enhance the performance of quantum dot solar cells（QDSCs）. In order to determine these values, this paper concentrates on the optical generation lifetime, the recombination lifetime, and the effective density state in QDs. Furthermore, these parameters are studied in relation with the average total number of electrons density. The values of the surface generation–recombination rate are found to be negative, which implies that the generation process is dominant in the absorption quantum dot region. Consequently, induced photocurrent density relation with device parameters is determined. The results ensure that QDSCs can have higher response photocurrent and then improve the power conversion efficiency. Moreover, the peak value of the average total number of electrons density is achieved at the UV range and is extended to the visible range, which is adequate for space and ground solar applications.
