Kosterlitz–Thouless transition, spectral property and magnetic moment for a two-dot structure with level difference

By means of the numerical renormalization group method, we study the phase transition, the spectral property, and the temperature-dependent magnetic moment for a parallel double dot system with level difference, where the dot energies are kept symmetric to the half-filled level. A Kosterlitz–Thouless（KT） transition between local spin triplet and singlet is found. In the triplet regime, the local spin is partially screened by the conduction leads and spin-1 Kondo effect is realized.While for the singlet, the Kondo peak is strongly suppressed and the magnetic moment decreases to 0 at a definite low temperature. We attribute this KT transition to the breaking of the reflection symmetry, resulting from the difference of the charge occupations of the two dots. To understand this KT transition and related critical phenomena, detailed scenarios are given in the transmission coefficient and the magnetic moment, and an effective Kondo model refers to the RayleighSchrdinger perturbation theory is used.

Au Microdisk-Size Dependence of Quantum Dot Emission from the Hybrid Metal-Distributed Bragg Reflector Structures Employed for Single Photon Sources

We investigate metallic microdisk-size dependence of quantum dot （QD） spontaneous emission rate and micro- antenna directional emission effect for the hybrid metM-distributed Bragg reflector structures based on a particular single QD emission. It is found that the measured photolumineseence （PL） intensity is very sensitive to the size of metMlic disk, showing an enhancement factor of 11 when the optimal disk diameter is 2μm and the numerical aperture of microscope objective NA=0.5. It is found that for large metal disks, the Purcell effect is dominant for enhanced PL intensity, whereas for small size disks the main contribution comes from plasmon scattering at the disk edge within the light cone collected by the microscope objective.

Phase transition and charge transport through a triple dot device beyond the Kondo regime

Semiconductor quantum dot structure provides a promising basis for quantum information processing, within which to reveal the quantum phase and charge transport is one of the most important issues. In this paper, by means of the numerical renormalization group technique, we study the quantum phase transition and the charge transport for a parallel triple dot device in the strongly correlated limit, focusing on the effect of inter-dot hopping t beyond the Kondo regime. We find the quantum behaviors depend closely on the initial electron number on the dots, and the present model may map to single,double, and side-coupled impurity models in different parameter spaces. An orbital spin-1/2 Kondo effect between the conduction leads and the bonding orbital, and several magnetic-frustration phases are demonstrated when t is adjusted to different regimes. To understand these phenomena, a canonical transformation of the energy levels is given, and important physical quantities with respect to increasing t and necessary theoretical discussions are shown.

Time-Domain Traveling Wave Model of Single-Section Quantum Dot Mode-Locked Lasers with Optical Feedback

The optical feedback modulations of a passively mode-locked semiconductor laser with quantum dot structure were investigated in this study. The delay-induced dynamics of QD MLL under the condition of optical feedback have been studied by exploiting a time domain traveling wave(TDTW) model. The conventional TDTW model was improved to make it suitable for studying optical feedback system, especially the system with long external cavity structure. Combing the TDTW model with optical feedback and carrier rate equations, the pulse variation of a single section QD MLL was studied. This new model shows good agreement with the published experimental data. The roundtrip time and local light intensity modulation to the pulse evolution of QD MLL were studied. The results show that when the time for a light to go to and return from external cavity is equal to the integral times of the period of laser pulse without external feedback, resonance will be formed, and the period of pulse sequence is the shortest. The results also show that the stronger the local light intensity modulation is, the shorter the pulse period is.

Photoluminescence study of the In_(0.3)Ga_(0.7)As surface quantum dots coupling structure

Photoluminescence(PL)was investigated as functions of the excitation intensity and temperature for a coupling surface quantum dots(SQDs)structure which consists of one In_(0.3)Ga_(0.7)As SQDs layer being stacked on multi-layers of In_(0.3)Ga_(0.7)As buried quantum dots(BQDs).Accompanied by considering the localized excitons effect induced by interface fluctuation,carrier transition between BQDs and SQDs were analyzed carefully.The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL characteristics between BQDs and SQDs.These results are useful for future application of SQDs as surface sensitive sensors.

Quantum dot quantum cascade photodetector using a laser structure

We report on a quantum dot quantum cascade detector（QD-QCD）, whose structure is derived from a QD cascade laser. In this structure, more ordered In As QD layers formed in the Stranski-Krastanow growth mode on a thin Ga As buffer layer are incorporated into the active region. This QD-QCD can operate up to room temperature with a peak detection wavelength of 5.8 μm. A responsivity of 3.1 mA/W at 160 K and a detectivity of 3.6 × 10~8 Jones at 77 K are obtained. The initial performance of the detector is promising, and, by further optimizing the growth of InA s QDs, integrated QD-quantum cascade laser/QCD applications are expected.

The effect of differential temperatures on the latent heat in the nucleation of CdSe quantum dots

This work studied the effect of differential temperatures on the latent heat in the nucleation of CdSe quantum dots（QDs）.The result showed that,by the formula of phase change,with increasing the reaction temperature,the latent heat in the nucleation of QDs reduced.CdSe QDs with the size-dispersion from 2.7 to 3.6 nm were synthesized via oleic acid-paraffin liquid system by controlling the reaction temperature from 180 to 220℃.Synthesized QDs were characterized by UV-vis absorption spectra and X-ray diffraction（XRD）.The result of UV-vis absorption spectra showed that with increasing of reaction temperature,the first absorption peak was red-shifted and the size of QD increased.The result of XRD showed that the synthesized QDs were zinc-blende structure.

A Novel Interpretation of Structural Dot Plots of Genomes Derived from the Analysis of Two Strains of Neisseria meningitidis

Neisseria meningitidis is the agent of invasive meningococcal disease, including cerebral meningitis and septicemia. Because the diseases caused by different clonal groups （sequence types） have their own epidemiological characteristics, it is important to understand the differences among the genomes of the N. meningitidis clonal groups. To this end, a novel interpretation of a structural dot plot of genomes was devised and applied; exact nu- cleotide matches between the genomes ofN. meningitidis serogroup A strain Z2491 and serogroup B strain MC58 were identified, leading to the specification of various structural regions. Known and putative virulence genes for each N. meningitidis strain were then classified into these regions. We found that virulence genes of MC58 tend more to the translocated regions （chromosomal segments in new sequence contexts） than do those of Z2491, notably tending towards the interface between one of the translocated regions and the collinear region. Within the col- linear region, virulence genes tend to occur within 16 kb of gaps in the exact matches. Verification of these tendencies using genes clustered in the cps locus was sufficiently supportive to suggest that these tendencies can be used to focus the search for and understanding of virulence genes and mechanisms of pathogenicity in these two organisms.

Fluorescence Retention of Organosilane-polymerized Carbon Dots Inverse Opals in CuCl Suspension

A novel and fluorescence retention inverse opal has been achieved from organosilane-polymerized carbon dots（SiCDs）, which is prepared via infiltrating SiCD solution into the interstice of photonic crystal（PC） template, low temperature treatment, heating polymerization and removing the colloidal template. The as-prepared SiCD inverse opals demonstrate close-cell structure, which is completely different from conventional open-cell structure. Then the fluorescence signal of as-prepared sample keeps almost unchanged in CuCl suspension while the fluorescence of SiCD solution can be quenched by CuCl suspension through an effective electron transfer process. This phenomenon can be attributed to the combined effect of high hydrostatic pressure in the pore structure, stable crosslinking network and fluorescence enhancement by PC structure. The SiCD inverse opals have advantages of unique close-cell structure, easy preparation and good repeatability that give an important insight into the design and manufacture of novel and advanced optical devices.