A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long ...A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate-drain length of 8μm.展开更多
We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors （DH-HEMTs） with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two- dimension...We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors （DH-HEMTs） with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two- dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs （-100 V） was significantly improved compared to that of conventional AlGaN/GaN HEMTs （-50 V） for the device with gate dimensions of 0.5 - 100μm and a gate-drain distance of 1μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61334002,61106106,and 61204085the China Postdoctoral Science Foundation Funded Project under Grant No 2015M582610
文摘A novel A1GaN/GaN high electron mobility transistor （HEMT） with double buried p-type layers （DBPLs） in the GaN buffer layer and its mechanism are studied. The DBPL A1GaN/GaN HEMT is characterized by two equi-long p-type GaN layers which are buried in the GaN buffer layer under the source side. Under the condition of high-voltage blocking state, two reverse p-n junctions introduced by the buried p-type layers will effectively modulate the surface and bulk electric fields. Meanwhile, the buffer leakage is well suppressed in this structure and both lead to a high breakdown voltage. The simulations show that the breakdown voltage of the DBPL structure can reach above 2000 V from 467 V of the conventional structure with the same gate-drain length of 8μm.
基金Project Supported by the National science and Technology Major Project of thc Ministry of Science and Technology of China(No. 2008ZX01002-002)the Major Program and the Key Program of the National Natural science Foundation of China(Nos.60890191, 60736033)
文摘We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors （DH-HEMTs） with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two- dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs （-100 V） was significantly improved compared to that of conventional AlGaN/GaN HEMTs （-50 V） for the device with gate dimensions of 0.5 - 100μm and a gate-drain distance of 1μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.
