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Application of a Cleaning System Made up of a Centrifugal Fan with Double Channel and One Sieve to Combine
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作者 Shen Dechao(Northeast Agricultural University. Harbin 150030, PRC) 《Journal of Northeast Agricultural University(English Edition)》 CAS 1995年第2期142-151,共10页
In this paper the application of a cleaning system which was made up of a centrifugal fan with double channel and one sieve to 4LZ-3.5 combine was introduced. This cleaning system with double channel compared with the... In this paper the application of a cleaning system which was made up of a centrifugal fan with double channel and one sieve to 4LZ-3.5 combine was introduced. This cleaning system with double channel compared with the traditional air-sieve cleaning system of combines may omit one two sieves and simplify the transmission mechanism. It is also compared with the present cleaning system with double channel applied to some combines, such as the Commandor 112CS/ 228CS combines of Claas Corporation in Germany and the MAXIMIZERTMombincs of John Deerc company in U.S.A. It may omit one sieve and the preclcaner and simlify the transmission mechanism. The measuring results indicated that the cleaning ratio of wheat grain is 99.1% and the cleaning loss ratio of wheat is 0.17% when the feed rate is 4.01 kg/ s. 展开更多
关键词 APPLICATION Centrifugal fan with double channel Cleaning system
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IGZO/ZTO TFTs with Modulated Double Channel of Thickness Structures
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作者 Jin-Li Weng 《Journal of Mechanics Engineering and Automation》 2021年第5期115-120,共6页
The device characteristics of IGZO/ZTO(indium-gallium-zinc oxide/zinc-tin oxide)TFTs(thin film transistors)with modulated channels were investigated.The field effect mobility was enhanced to 20.4 cm2/Vs in the channel... The device characteristics of IGZO/ZTO(indium-gallium-zinc oxide/zinc-tin oxide)TFTs(thin film transistors)with modulated channels were investigated.The field effect mobility was enhanced to 20.4 cm2/Vs in the channel-modulated TFT.The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator interfaces.It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation.The threshold voltage was controlled at appropriate value.These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure. 展开更多
关键词 IGZO ZTO double insulating layer double channel layer
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