Biventricular repair for endocardial cushion defects with double outlet right ventricle

Objective-Double outlet right ventricle,which often associated with total anomalous pulmonary venous connection and complete endocardial cushion defects,has been considered a risk factor for biventricular repair procedure. To reviewed cases treated by biventricular repair for endocardial cushion defects with double outlet right ventricle. Methods From July to November of 2009,6

Quantum plasmons in the hybrid nanostructures of double vacancy defected graphene and metallic nanoarrays

We study the plasmonic properties of hybrid nanostructures consisting of double vacancy defected graphene(DVDGr)and metallic nanoarrays using the time-dependent density functional theory. It is found that DVDGr with pure and mixed noble/transition-metal nanoarrays can produce a stronger light absorption due to the coherent resonance of plasmons than graphene nanostructures. Comparing with the mixed Au/Pd nanoarrays, pure Au nanoarrays have stronger plasmonic enhancement. Furthermore, harmonics from the hybrid nanostructures exposed to the combination of lasers ranged from ultraviolet to infrared and a controlling pulse are investigated theoretically. The harmonic plateau can be broadened significantly and the energy of harmonic spectra is dramatically extended by the controlling pulse. Thus, it is possible to tune the width and intensity of harmonic spectrum to achieve broadband absorption of radiation. The methodology described here not only improves the understanding of the surface plasmon effect used in a DVDGr-metal optoelectronic device but also may be applicable to different optical technologies.

Role of Double Oxide Film Defects in the Formation of Gas Porosity in Commercial Purity and Sr-containing Al Alloys

The role of double oxide film （bifilm） defects in the formation of gas porosity in commercial purity and Srcontaining AI alloys was investigated by means of a reduced pressure test （RPT） technique. The liquid metal was poured from a height into a crucible to introduce oxide defects into the melt. The melt was then subjected to different ＂hydrogen addition＂ and ＂holding in liquid state＂ regimes before RPT samples were taken. The RPT samples were then characterized by determining their porosity parameters and examining the internal surfaces of the pores formed in them by scanning electron microscopy. The results indicated oxide defects as the initiation sites for the growth of gas porosity, both in commercial purity and Sr-containing AI alloys. The results also rejected reduction of the surface tension of the melt, increase in the volumetric shrinkage and reduction in interdendritic feeding as the possible causes of an increase in the porosity content of the AI castings modified with strontium. The change in the composition of the oxide layers of double oxide film defects was suggested to be responsible for this behaviour.

Effect of Double Oxide Film Defects on Mechanical Properties of As-Cast C95800 Alloy

The morphology of double oxide film defects and their influence on the tensile mechanical properties of a commercial Cu-Al （C95800） alloy were investigated in this study. Plane castings were produced with two types of pouting systems, and their tensile properties were measured and then analyzed by means of Weibull statistics method. The fracture surfaces of the tensile specimens were examined using scanning electron microscopy equipped with energy-dispersive spectroscopy. A large amount of double oxide film defects were observed on the tensile fractured specimens of the topfilled plane castings, and their chemical composition is identified to be Al2O3. Weibull statistics analyses showed that the double oxide film defects significantly reduce mechanical properties of the castings investigated. Furthermore, the ultimate tensile strength is more obviously deteriorated by double oxide film defects than elongation.

Enhanced etching of silicon didioxide guided by carbon nanotubes in HF solution

This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.