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Intersubband optical absorption of electrons in double parabolic quantum wells of Al_xGa_(1-x)As/Al_yGa_(1-y)As
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作者 马淑芳 屈媛 班士良 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期516-521,共6页
Some realizable structures of double parabolic quantum wells(DPQWs) consisting of Al_xGa_(1-x)As/Al_yGa_(1-y)As are constructed to discuss theoretically the optical absorption due to the intersubband transition ... Some realizable structures of double parabolic quantum wells(DPQWs) consisting of Al_xGa_(1-x)As/Al_yGa_(1-y)As are constructed to discuss theoretically the optical absorption due to the intersubband transition of electrons for both symmetric and asymmetric cases with three energy levels of conduction bands. The electronic states in these structures are obtained using a finite element difference method. Based on a compact density matrix approach, the optical absorption induced by intersubband transition of electrons at room temperature is discussed. The results reveal that the peak positions and heights of intersubband optical absorption coefficients(IOACs) of DPQWs are sensitive to the barrier thickness, depending on Al component. Furthermore, external electric fields result in the decrease of peak, and play an important role in the blue shifts of absorption spectra due to electrons excited from ground state to the first and second excited states. It is found that the peaks of IOACs are smaller in asymmetric DPQWs than in symmetric ones. The results also indicate that the adjustable extent of incident photon energy for DPQW is larger than for a square one of a similar size. Our results are helpful in experiments and device fabrication. 展开更多
关键词 double parabolic quantum well electronic intersubband optical absorption three energy levels
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Electronic Raman scattering in double semi-parabolic quantum wells
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作者 N. Zamani A. Keshavarz M. J. Karimi 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第5期523-526,共4页
The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the... The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths is studied. Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case. 展开更多
关键词 electronic Raman scattering double semi-parabolic quantum wells
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双抛物量子阱的非对称性与电子能态
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作者 郝剑红 阎发旺 李有成 《河北师范大学学报(自然科学版)》 CAS 1997年第4期374-378,共5页
在有效质量近似下,计算了非对称双抛物量子阱内电子的能量,讨论了双抛物阱的非对称性对电子本征能态和跃迁能等的影响。结果表明非对称在双抛物阱中的影响比在双方势阱中更为显著。
关键词 双抛物量子阱 非对称性 电子能级 半导体 量子阱
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双抛量子阱中类氢杂质的结合能
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作者 郝剑红 闫发旺 李有成 《河北师范大学学报(自然科学版)》 CAS 1999年第2期209-214,共6页
以GaAs/Ga1-xAlxAs为例,在有效质量的近似下,讨论了双抛量子阱中类氢杂质的结合能.结果表明:(1)双方量子阱中类氢杂质的结合能是双抛阱中杂质结合能的1.3倍;(2)无论杂质在阱中还是垒中,不仅垒宽和阱宽影... 以GaAs/Ga1-xAlxAs为例,在有效质量的近似下,讨论了双抛量子阱中类氢杂质的结合能.结果表明:(1)双方量子阱中类氢杂质的结合能是双抛阱中杂质结合能的1.3倍;(2)无论杂质在阱中还是垒中,不仅垒宽和阱宽影响其结合能。 展开更多
关键词 类氢杂质 结合能 量子阱 双抛量子阱 半导体
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