In the case of third-party tort,due to the lack of clear and detailed provisions on the treatment of employee’s industrial injury insurance payment and tort damage compensation,the judicial theory and practice have b...In the case of third-party tort,due to the lack of clear and detailed provisions on the treatment of employee’s industrial injury insurance payment and tort damage compensation,the judicial theory and practice have brought many disputes.Through combing the current relevant laws and regulations,it can be found that the application of the two systems will lead to the overlapping of industrial injury compensation.This paper analyzes the problems arising from the concurrence of industrial injury compensation and tort compensation using the case of Fu and Li v.a passenger transport company,and puts forward some ideas and suggestions on how to improve the settlement measures of such cases.展开更多
A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capaci...A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capacitance,the charge balance in the super-junction region of the conventional deep trench SJ LDMOS(Con.DT SJ LDMOS)device will be broken,resulting in breakdown voltage(BV)of the device drops.DC DT SJ LDMOS solves the SIS capacitance effect by adding a vertical variable doped charge compensation layer and a triangular charge compensation layer inside the Con.DT SJ LDMOS device.Therefore,the drift region reaches an ideal charge balance state again.The electric field is optimized by double charge compensation and gate field plate so that the breakdown voltage of the proposed device is improved sharply,meanwhile the enlarged on-current region reduces its specific on-resistance.The simulation results show that compared with the Con.DT SJ LD-MOS,the BV of the DC DT SJ LDMOS has been increased from 549.5 to 705.5 V,and the R_(on,sp) decreased to 23.7 mΩ·cm^(2).展开更多
在定子永磁型磁场调制(stator-permanent-magnet field modulated,S-FMPM)电机的设计基础上,引入磁场补偿设计,以期改善磁场调制效应,为实现电机转矩性能提升提供可能。基于气隙磁场调制理论,建立S-FMPM电机的调制函数,并展现磁场调制过...在定子永磁型磁场调制(stator-permanent-magnet field modulated,S-FMPM)电机的设计基础上,引入磁场补偿设计,以期改善磁场调制效应,为实现电机转矩性能提升提供可能。基于气隙磁场调制理论,建立S-FMPM电机的调制函数,并展现磁场调制过程,确定主要气隙谐波参与电机转矩性能研究。研究过程中,采用转子分区设计形成双气隙电机,使气隙磁场获得一定的补偿效果。接着,探讨双气隙电机的磁势分配规律,并基于此验证磁势利用效果的改善和电机转矩性能的提升;进一步,为改善该电机的磁场补偿效果,定义了体现磁势利用效果的谐波因子和反映转矩补偿效果的转矩补偿因子,分别作为优化目标,并引入分层优化策略对电机进行优化。最后,为了验证电机设计和优化分析的有效性,对电机电磁性能进行评估与分析,制造样机并进行实验,验证电机及其优化设计的合理性和有效性。展开更多
文摘In the case of third-party tort,due to the lack of clear and detailed provisions on the treatment of employee’s industrial injury insurance payment and tort damage compensation,the judicial theory and practice have brought many disputes.Through combing the current relevant laws and regulations,it can be found that the application of the two systems will lead to the overlapping of industrial injury compensation.This paper analyzes the problems arising from the concurrence of industrial injury compensation and tort compensation using the case of Fu and Li v.a passenger transport company,and puts forward some ideas and suggestions on how to improve the settlement measures of such cases.
文摘A deep trench super-junction LDMOS with double charge compensation layer(DC DT SJ LDMOS)is proposed in this paper.Due to the capacitance effect of the deep trench which is known as silicon-insulator-silicon(SIS)capacitance,the charge balance in the super-junction region of the conventional deep trench SJ LDMOS(Con.DT SJ LDMOS)device will be broken,resulting in breakdown voltage(BV)of the device drops.DC DT SJ LDMOS solves the SIS capacitance effect by adding a vertical variable doped charge compensation layer and a triangular charge compensation layer inside the Con.DT SJ LDMOS device.Therefore,the drift region reaches an ideal charge balance state again.The electric field is optimized by double charge compensation and gate field plate so that the breakdown voltage of the proposed device is improved sharply,meanwhile the enlarged on-current region reduces its specific on-resistance.The simulation results show that compared with the Con.DT SJ LD-MOS,the BV of the DC DT SJ LDMOS has been increased from 549.5 to 705.5 V,and the R_(on,sp) decreased to 23.7 mΩ·cm^(2).
文摘在定子永磁型磁场调制(stator-permanent-magnet field modulated,S-FMPM)电机的设计基础上,引入磁场补偿设计,以期改善磁场调制效应,为实现电机转矩性能提升提供可能。基于气隙磁场调制理论,建立S-FMPM电机的调制函数,并展现磁场调制过程,确定主要气隙谐波参与电机转矩性能研究。研究过程中,采用转子分区设计形成双气隙电机,使气隙磁场获得一定的补偿效果。接着,探讨双气隙电机的磁势分配规律,并基于此验证磁势利用效果的改善和电机转矩性能的提升;进一步,为改善该电机的磁场补偿效果,定义了体现磁势利用效果的谐波因子和反映转矩补偿效果的转矩补偿因子,分别作为优化目标,并引入分层优化策略对电机进行优化。最后,为了验证电机设计和优化分析的有效性,对电机电磁性能进行评估与分析,制造样机并进行实验,验证电机及其优化设计的合理性和有效性。
