The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can...The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.展开更多
The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the...The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths is studied. Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case.展开更多
This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells ...This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.展开更多
基金supported by the Lithuanian Research Council(Grant No.VP1-3.1-M-01-V-03-001)
文摘The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.
基金Project supported by the Shiraz University of Technology, Iran
文摘The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths is studied. Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case.
文摘This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.
