Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells

The effects of optical field on the phenomenon of optical bistability(OB) are investigated in a K-type semiconductor double quantum well(SDQW) under various parametric conditions. It is shown that the OB threshold can be manipulated by increasing the intensity of coupling field. The dependence of the shift of OB hysteresis curve on probe wavelength detuning is then explored. In order to demonstrate controllability of the OB in this SDQW, we compare the OB features of three different configurations which could arise in this SDQW scheme, i.e., K-type, Y-type, and inverted Y-type systems. The controllability of this semiconductor nanostructure medium makes the presented OB scheme more valuable for applications in all-optical switches, information storage, and logic circuits of all optical information processing.

Electronic Raman scattering in double semi-parabolic quantum wells

The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation. The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths is studied. Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case.

Simultaneous hydraulic fracturing of ultra-low permeability sandstone reservoirs in China: Mechanism and its field test

Based on the impact of the stress perturbation effect created by simultaneous propagation of multiple fractures in the process of simultaneous hydraulic fracturing, a thorough research on the mechanism and adaptation of simultaneous fracturing of double horizontal wells in ultra-low permeability sandstone reservoirs was conducted by taking two adjacent horizontal wells(well Yangping-1 and well Yangping-2 located in Longdong area of China Changqing Oilfield) as field test wells. And simultaneous fracturing optimal design of two adjacent horizontal wells was finished and employed in field test. Micro-seismic monitoring analysis of fracture propagation during the stimulation treatment shows that hydraulic fractures present a pattern of complicated network expansion, and the well test data after fracturing show that the daily production of well Yangping-1 and well Yangping-2 reach105.8 t/d and 87.6 t/d, which are approximately 9.4 times and 7.8 times the daily production of a fractured vertical well in the same area, respectively. Field test reflects that simultaneous hydraulic fracturing of two adjacent horizontal wells can enlarge the expansion area of hydraulic fractures to obtain a lager drainage area and realize the full stimulation of ultra-low permeability sandstone reservoirs in China Changqing oilfield. Therefore, simultaneous fracturing of two adjacent horizontal wells provides a good opportunity in stimulation techniques for the efficient development of ultra-low permeability reservoirs in China Changqing oilfield,and it has great popularization value and can provide a new avenue for the application of stimulation techniques in ultra-low permeability reservoirs in China.

Strain effects on performance of electroabsorption optical modulators

This paper reports a detailed theoretical investigation of strain effects on the performance of electroabsorption optical modulators based on the asym- metric intra-step-barrier coupled double strained quantum wells （AICD-SQWs） active layer. For this purpose, the electroabsorption coefficient was calculated over a range of AICD-SQWs strain from compressive to tensile strain. Then, the extinction ratio （ER） and insertion loss parameters were evaluated from calculated electroabsorp- tion coefficient for transverse electric （TE） input light polarization. The results of the simulation suggest that the tensile strain from 0.05% to 0.2% strain in the wide quantum well has a significant impact on the ER and insertion loss as compared with compressive strain, whereas the compressive strain of the narrow quantum well from -0.5% to -0.7% strain has a more pronounced impact on the improvement of the ER and insertion loss as compared with tensile strain.