In recent years,several failures of double circuit transmission line on the same tower due to lightning were happened in Beijing power grid.Although it can be reclosed successful,the lightning strike caused a grave th...In recent years,several failures of double circuit transmission line on the same tower due to lightning were happened in Beijing power grid.Although it can be reclosed successful,the lightning strike caused a grave threat to the power grid security.The cause of the accident and the accident process were studied for the sake of further understanding of the impact of lightning on power grid.As an example,110 kV double circuit transmission line(Xilong-line) was analyzed.At first,the system topology was given.Through the analysis on relay protection actions and the fault recorder data,over voltage on the insulator strings was calculated.Based on the analysis and the calculation,accident cause and the process were presented respectively.Secondly,it comes to the conclusion that the lightning failure was caused by counterattack.The wave of the lightning over voltage would spread to the not grounded neutral point of the transformers,and make the neutral protective gap breakdown,then cause freewheeling with the frequency of 50 Hz.As results of the relay protection,the double circuit transmission line all tripped out.Finally,the causes of the accident were proposed that included terrain features,large corner towers,strong thunderstorm weather and poor grounded contact of the tower.展开更多
In view of the problems of completely depending on rain, low and unstable yield and complicated planting of dry land foxtail millet, the light simplified cultivation techniques of wide row and double ridge with filmin...In view of the problems of completely depending on rain, low and unstable yield and complicated planting of dry land foxtail millet, the light simplified cultivation techniques of wide row and double ridge with filming, fertilizing and sowing on one for foxtail millet was formed through the integration of plastic film mulching technology and mechanized production technology by Institute of Millet crops of Hebei Academy of Agriculture and Forestry Sciences, and the techniques were introduced from the key technologies of pre-sowing preparation, sowing, supporting equipment, field management, harvesting, plastic film recycling.展开更多
A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,0...A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.展开更多
Photocatalytic reduction of CO2 with H2 O to syngas is an effective way for producing high value-added chemical feedstocks such as methanol and light olefins in industry.Nevertheless,the precise control of CO/H2 ratio...Photocatalytic reduction of CO2 with H2 O to syngas is an effective way for producing high value-added chemical feedstocks such as methanol and light olefins in industry.Nevertheless,the precise control of CO/H2 ratio from photocatalytic CO2 reduction reaction still poses a great challenge for the further application.Herein,we prepared a series of highly efficient heterostructure based on highly dispersed palladium supported on ultrathin Co Al-layered double hydroxide(LDH).In conjunction with a Ru-complex sensitizer,the molar ratios of CO/H2 can be tuned from 1:0.74 to 1:3 under visible-light irradiation(λ>400 nm).More interestingly,the syngas can be obtained under light irradiation atλ>600 nm.Structure characterization and density functional theory calculations revealed that the remarkable catalytic activity can be due to the supported palladium,which improved the charge transfer efficiency.Meanwhile,more H atoms were used to generate H2 on the supported palladium for further tunable CO/H2 ratio.This work demonstrates a new strategy for harnessing abundant solar-energy to produce syngas from a CO2 feedstock.展开更多
The AlGaN-based deep ultraviolet light-emitting diodes(LED) with double electron blocking layers(d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances ...The AlGaN-based deep ultraviolet light-emitting diodes(LED) with double electron blocking layers(d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency(IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells(QWs) enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.展开更多
To overcome hole-injection limitation of p^+-n emitter junction in 4H-SiC light triggered thyristor, a novel high- voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demon...To overcome hole-injection limitation of p^+-n emitter junction in 4H-SiC light triggered thyristor, a novel high- voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two- dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole- injection of p^+-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n- base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm^2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.展开更多
We experimentally study the generation and storage of double slow light pulses in a pr^3+:Y2SiO5 crystal. Under electromagnetically induced transparency, a single signal pulse is stored in the spin coherence of the ...We experimentally study the generation and storage of double slow light pulses in a pr^3+:Y2SiO5 crystal. Under electromagnetically induced transparency, a single signal pulse is stored in the spin coherence of the crystal. By simultaneously switching on two control fields to recall the stored information, the spin coherence is converted into two slow light pulses with distinct frequencies. Furthermore, the storage and controlled retrieval of double slow light pulses are obtained by manipulating the control fields. This study of double slow light pulses may have practical applications in information processing and all-optical networks.展开更多
We numerically study the enhancement factor of energy density and absorption efficiency inside the double cylindrical microcavities based on a triple-band metamaterial absorber. The compact single unit cell consists o...We numerically study the enhancement factor of energy density and absorption efficiency inside the double cylindrical microcavities based on a triple-band metamaterial absorber. The compact single unit cell consists of concentric gold rings with a gold disk in the center and a metallic ground plane separated by a dielectric layer. We demonstrate that the multilayer structure with subwavelength electromagnetic confinement allows 104-105-fold enhancement of the electromagnetic energy density inside the double cavities and contains the most energy of the incoming light. Particularly, the enhancement factor of energy density G shows strong ability of localizing light and some regularity as the change of the thickness of the dielectric slab and dielectric constant. At the normal incidence of electromagnetic radiation, the obtained reflection spectra show that the resonance frequencies of the double microcavities operate in the range of 10-30μm. We also calculate the absorption efficiency C, which can reach 95%, 97% and 95% at corresponding frequency by optimizing the structure's geometry parameters. Moreover, the proposed structure will be insensitive to the polarization of the incident wave due to the symmetry of the double cylindrical microcavities. The proposed optical metamaterial is a promising candidate as absorbing elements in scientific and technical applications due to its extreme confinement, multiband absorption and polarization insensitivity.展开更多
At present, as capital well-known office building, the SCITECHTOWER & PLACE achieved authenticated certificates of ISO 14001both international and China environmental management system fromUKAS and CACEB. It’s th...At present, as capital well-known office building, the SCITECHTOWER & PLACE achieved authenticated certificates of ISO 14001both international and China environmental management system fromUKAS and CACEB. It’s the first time for an office building gained thedouble authentication in mainland. Ms. Zhang Keping, general managerof the SCITECH TOWER & PLACE claimed that, it’s the展开更多
SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output p...SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.展开更多
We fabricate a kind of novel efficient blue fluorescent organic light emitting device(OLED) based on p-n heterojunctions composed of hole transporting layer(HTL) N,N '-bis(naphthalen-1-yl)-N,N '-bis(phenyl)-...We fabricate a kind of novel efficient blue fluorescent organic light emitting device(OLED) based on p-n heterojunctions composed of hole transporting layer(HTL) N,N '-bis(naphthalen-1-yl)-N,N '-bis(phenyl)-benzidine(NPB) and electron transporting layer(ETL) 4,7-diphnenyl-1,10-phenanthroline(BPhen),into which a new blue material,DNCA(a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine),is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency(η max) of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L'Eclairage(CIE) coordinates of this device change slightly from(0.13,0.27) to(0.13,0.23) as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.展开更多
文摘In recent years,several failures of double circuit transmission line on the same tower due to lightning were happened in Beijing power grid.Although it can be reclosed successful,the lightning strike caused a grave threat to the power grid security.The cause of the accident and the accident process were studied for the sake of further understanding of the impact of lightning on power grid.As an example,110 kV double circuit transmission line(Xilong-line) was analyzed.At first,the system topology was given.Through the analysis on relay protection actions and the fault recorder data,over voltage on the insulator strings was calculated.Based on the analysis and the calculation,accident cause and the process were presented respectively.Secondly,it comes to the conclusion that the lightning failure was caused by counterattack.The wave of the lightning over voltage would spread to the not grounded neutral point of the transformers,and make the neutral protective gap breakdown,then cause freewheeling with the frequency of 50 Hz.As results of the relay protection,the double circuit transmission line all tripped out.Finally,the causes of the accident were proposed that included terrain features,large corner towers,strong thunderstorm weather and poor grounded contact of the tower.
基金Supported by the National Key Technology R&D Program(2014BAD07B01-02)the Science and Technology Demonstration Project of Bohai Granary in Hebei Provincethe Special Fund for Agro-scientific Research in Public Interest(201303133-1-6)~~
文摘In view of the problems of completely depending on rain, low and unstable yield and complicated planting of dry land foxtail millet, the light simplified cultivation techniques of wide row and double ridge with filming, fertilizing and sowing on one for foxtail millet was formed through the integration of plastic film mulching technology and mechanized production technology by Institute of Millet crops of Hebei Academy of Agriculture and Forestry Sciences, and the techniques were introduced from the key technologies of pre-sowing preparation, sowing, supporting equipment, field management, harvesting, plastic film recycling.
基金the National Natural Science Foundation of China (Grant Nos.61204087, 61306099)the Guangdong Natural Science Foundation (Grant No. S2012040007003)+2 种基金China Postdoctoral Science Foundation (2013M531841)the Fundamental Research Funds for the Central Universities (2014ZM0003, 2014ZM0034, 2014ZM0037, 2014ZZ0028)the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20120172120008)
文摘A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.
基金supported by the Fundamental Research Funds for the Central Universities(XK1802-6,XK1902,XK1803-05,12060093063,2312018RC07)the National Natural Science Foundation of China(U1707603,21878008,21625101,20190816)。
文摘Photocatalytic reduction of CO2 with H2 O to syngas is an effective way for producing high value-added chemical feedstocks such as methanol and light olefins in industry.Nevertheless,the precise control of CO/H2 ratio from photocatalytic CO2 reduction reaction still poses a great challenge for the further application.Herein,we prepared a series of highly efficient heterostructure based on highly dispersed palladium supported on ultrathin Co Al-layered double hydroxide(LDH).In conjunction with a Ru-complex sensitizer,the molar ratios of CO/H2 can be tuned from 1:0.74 to 1:3 under visible-light irradiation(λ>400 nm).More interestingly,the syngas can be obtained under light irradiation atλ>600 nm.Structure characterization and density functional theory calculations revealed that the remarkable catalytic activity can be due to the supported palladium,which improved the charge transfer efficiency.Meanwhile,more H atoms were used to generate H2 on the supported palladium for further tunable CO/H2 ratio.This work demonstrates a new strategy for harnessing abundant solar-energy to produce syngas from a CO2 feedstock.
基金Project supported by the Special Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)the Major Scientific and Technological Projects of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province,China(Grant Nos.2014B010121001 and 2014B010119004)
文摘The AlGaN-based deep ultraviolet light-emitting diodes(LED) with double electron blocking layers(d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency(IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells(QWs) enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.
基金supported by the National Natural Science Foundation of China(Grant No.51677149)
文摘To overcome hole-injection limitation of p^+-n emitter junction in 4H-SiC light triggered thyristor, a novel high- voltage 4H-SiC light triggered thyristor with double-deck thin n-base structure is proposed and demonstrated by two- dimensional numerical simulations. In this new structure, the conventional thin n-base is split to double-deck. The hole- injection of p^+-n emitter junction is modulated by modulating the doping concentration and thickness of upper-deck thin n- base. With double-deck thin n-base, the current gain coefficient of the top pnp transistor in 4H-SiC light triggered thyristor is enhanced. As a result, the triggering light intensity and the turn-on delay time of 4H-SiC light triggered thyristor are both reduced. The simulation results show that the proposed 10-kV 4H-SiC light triggered thyristor is able to be triggered on by 500-mW/cm^2 ultraviolet light pulse. Meanwhile, the turn-on delay time of the proposed thyristor is reduced to 337 ns.
基金supported by the National Basic Research Program of China (Grant No.2011CB921603)the National Natural Science Foundation of China (Grant Nos.11074097,10904048,10974071,11004079,and 11004080)+1 种基金the Basic Research Program of Jilin Universitythe China Postdoctoral Science Foundation (Grant No.2011M500924)
文摘We experimentally study the generation and storage of double slow light pulses in a pr^3+:Y2SiO5 crystal. Under electromagnetically induced transparency, a single signal pulse is stored in the spin coherence of the crystal. By simultaneously switching on two control fields to recall the stored information, the spin coherence is converted into two slow light pulses with distinct frequencies. Furthermore, the storage and controlled retrieval of double slow light pulses are obtained by manipulating the control fields. This study of double slow light pulses may have practical applications in information processing and all-optical networks.
基金Supported by the Program of Natural Science Research of Jiangsu Higher Education Institutions of China under Grant No14KJB 140005
文摘We numerically study the enhancement factor of energy density and absorption efficiency inside the double cylindrical microcavities based on a triple-band metamaterial absorber. The compact single unit cell consists of concentric gold rings with a gold disk in the center and a metallic ground plane separated by a dielectric layer. We demonstrate that the multilayer structure with subwavelength electromagnetic confinement allows 104-105-fold enhancement of the electromagnetic energy density inside the double cavities and contains the most energy of the incoming light. Particularly, the enhancement factor of energy density G shows strong ability of localizing light and some regularity as the change of the thickness of the dielectric slab and dielectric constant. At the normal incidence of electromagnetic radiation, the obtained reflection spectra show that the resonance frequencies of the double microcavities operate in the range of 10-30μm. We also calculate the absorption efficiency C, which can reach 95%, 97% and 95% at corresponding frequency by optimizing the structure's geometry parameters. Moreover, the proposed structure will be insensitive to the polarization of the incident wave due to the symmetry of the double cylindrical microcavities. The proposed optical metamaterial is a promising candidate as absorbing elements in scientific and technical applications due to its extreme confinement, multiband absorption and polarization insensitivity.
文摘At present, as capital well-known office building, the SCITECHTOWER & PLACE achieved authenticated certificates of ISO 14001both international and China environmental management system fromUKAS and CACEB. It’s the first time for an office building gained thedouble authentication in mainland. Ms. Zhang Keping, general managerof the SCITECH TOWER & PLACE claimed that, it’s the
文摘SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60876046)the Tianjin Natural Science Foundation,China (Grant No. 10JCYBJC01100)
文摘We fabricate a kind of novel efficient blue fluorescent organic light emitting device(OLED) based on p-n heterojunctions composed of hole transporting layer(HTL) N,N '-bis(naphthalen-1-yl)-N,N '-bis(phenyl)-benzidine(NPB) and electron transporting layer(ETL) 4,7-diphnenyl-1,10-phenanthroline(BPhen),into which a new blue material,DNCA(a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine),is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency(η max) of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L'Eclairage(CIE) coordinates of this device change slightly from(0.13,0.27) to(0.13,0.23) as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.