MXene@c-MWCNT Adhesive Silica Nanofiber Membranes Enhancing Electromagnetic Interference Shielding and Thermal Insulation Performance in Extreme Environments

A lightweight flexible thermally stable composite is fabricated by com-bining silica nanofiber membranes(SNM)with MXene@c-MWCNT hybrid film.The flexible SNM with outstanding thermal insulation are prepared from tetraethyl orthosilicate hydrolysis and condensation by electrospinning and high-temperature calcination;the MXene@c-MWCNT_(x:y)films are prepared by vacuum filtration tech-nology.In particular,the SNM and MXene@c-MWCNT_(6:4)as one unit layer(SMC_(1))are bonded together with 5 wt%polyvinyl alcohol(PVA)solution,which exhibits low thermal conductivity(0.066 W m^(-1)K^(-1))and good electromagnetic interference(EMI)shielding performance(average EMI SE_(T),37.8 dB).With the increase in func-tional unit layer,the overall thermal insulation performance of the whole composite film(SMC_(x))remains stable,and EMI shielding performance is greatly improved,especially for SMC_(3)with three unit layers,the average EMI SET is as high as 55.4 dB.In addition,the organic combination of rigid SNM and tough MXene@c-MWCNT_(6:4)makes SMC_(x)exhibit good mechanical tensile strength.Importantly,SMC_(x)exhibit stable EMI shielding and excellent thermal insulation even in extreme heat and cold environment.Therefore,this work provides a novel design idea and important reference value for EMI shielding and thermal insulation components used in extreme environmental protection equipment in the future.

Test research on IR radiation characteristics control of space target using cryogenic vacuum multilayer insulation film structure

In order to achieve the objective of controlling IR radiation characteristics of space target,we design multilayer insulation film structure to cover the target.In space environment the structure comes to cryogenic vacuum multilayer insulation film structure.It can quickly lower the surface temperature of space target,approaching to the ultra-low temperature of the space environment.A vacuum simulation verification test was designed and performed.Through the analysis of test results,we can see that the surface temperature of space target covered by the structure changes with the ambient temperature,having no direct relationship with internal temperature of the target.Therefore,the designed cryogenic vacuum multilayer insulation film structure has excellent IR radiation control performance.It can reduce the target’s IR radiation intensity so as to reduce the probability of detection by IR detectors.

Hardness Measurement and Evaluation of Double-layer Films on Material Surface

A method for hardness measurement and evaluation of double-layer thin films on the material surface is proposed. Firstly, it is studied how to obtain the force-indentation response with the finite element method when the indentation is less than 100 nanometers, in which current nanoindentation experiments have no reliable accuracy. The whole hardness-displacement curve and fitted equation are obtained. At last, a formula to predict the hardness of the thin film on the material surface is derived and favorably compared with experiments.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

Confined states and spin polarization on a topological insulator thin film modulated by an electric potential

We study the electronic structure and spin polarization of the surface states of a three-dimensional topological insulator thin film modulated by an electrical potential well. By routinely solving the low-energy surface Dirac equation for the system, we demonstrate that confined surface states exist, in which the electron density is almost localized inside the well and exponentially decayed outside in real space, and that their subband dispersions are quasilinear with respect to the propagating wavevector. Interestingly, the top and bottom surface confined states with the same density distribution have opposite spin polarizations due to the hybridization between the two surfaces. Along with the mathematical analysis, we provide an intuitive, topological understanding of the effect.

Quantum spin Hall insulators in chemically functionalized As(110)and Sb(110)films

We propose a new type of quantum spin Hall （QSH） insulator in chemically functionalized As （110） and Sb （110） film. According to first-principles calculations, we find that metallic As （110） and Sb （110） films become QSH insulators after being chemically functionalized by hydrogen （H） or halogen （C1 and Br） atoms. The energy gaps of the functionalized films range from 0.121 eV to 0.304 eV, which are sufficiently large for practical applications at room temperature. The energy gaps originate from the spin-orbit coupling （SOC）. The energy gap increases linearly with the increase of the SOC strength λ/λ0. The Z2 invariant and the penetration depth of the edge states are also calculated and studied for the functionalized films.

Magneto-Transport Properties of Insulating Bulk States in Bi(111) Films

Magneto-transport properties of insulating bulk states in Bi（111） films are systematically investigated under the parallel field （BⅡ）. We find that the magnetotransport of the Bll field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance （MR） up to 20% in the BⅡ field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR（BⅡ） from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 1Ohm, the positive MR（BⅡ） is induced by weak anti-localization from the surface states.

Design of periodic metal-insulator-metal waveguide back structures for the enhancement of light absorption in thin-film solar cells

To increase the absorption in a thin layer of absorbing material （amorphous silicon, a-Si）, a light trapping design is presented. The designed structure incorporates periodic metal-insulator-metal waveguides to enhance the optical path length of light within the solar cells. The new design can result in broadband optical absorption enhancement not only for transverse magnetic （TM）-polarized light, but also for transverse electric （TE）-polarized light. No plasmonic modes can be excited in TE-polarization, but because of the coupling into the a-Si planar waveguide guiding modes and the diffraction of light by the bottom periodic structures into higher diffraction orders, the total absorption in the active region is also increased. The results from rigorous coupled wave analysis show that the overall optical absorption in the active layer can be greatly enhanced by up to 40%. The designed structures presented in this paper can be integrated with back contact technology to potentially produce high-efficiency thin-film solar cell devices.

Hybrid and Reflective Insulation Assemblies for Buildings

Materials with a low thermal emittance surface have been used for many years to create reflective insulations that reduce the rate of heat flow across building envelopes. Reflective insulation technology is now being combined with other energy conserving technologies to optimize overall thermal performance. The basis for the performance of reflective insulations and radiant barriers will be discussed along with the combination of these materials with cellular plastic or mineral fiber insulations to form hybrid insulation assemblies. Calculations of thermal resistance for enclosed reflective air spaces and current field data from Southeast Asia will be presented. These data show that reductions in heat transfer across the building enclosure can be effectively reduced by the use of enclosed reflective air spaces and attic radiant barriers. Reflective technology increases the overall thermal resistance of the building enclosure when used to insulate poured concrete structures.

Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

We develop a tractable theoretical model to investigate the thermoelectric （TE） transport properties of surface states in topological insulator thin films （TITFs） of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices.

Infrared Nano-Imaging of Electronic Phase across the Metal–Insulator Transition of NdNiO_(3) Films

NdNiO_(3) is a typical correlated material with temperature-driven metal–insulator transition. Resolving the local electronic phase is crucial in understanding the driving mechanism behind the phase transition. Here we present a nano-infrared study of the metal–insulator transition in NdNiO_(3) films by a cryogenic scanning near-field optical microscope. The NdNiO_(3) films undergo a continuous transition without phase coexistence. The nano-infrared signal shows significant temperature dependence and a hysteresis loop. Stripe-like modulation of the optical conductivity is formed in the films and can be attributed to the epitaxial strain. These results provide valuable evidence to understand the coupled electronic and structural transformations in NdNiO_(3) films at the nano-scale.

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.

Modification of the Hybridization Gap by Twisted Stacking of Quintuple Layers in a Three-Dimensional Topological Insulator Thin Film

Twisting the stacking of layered materials leads to rich new physics. A three-dimensional topological insulator film hosts two-dimensional gapless Dirac electrons on top and bottom surfaces, which, when the film is below some critical thickness, will hybridize and open a gap in the surface state structure. The hybridization gap can be tuned by various parameters such as film thickness and inversion symmetry, according to the literature. The three-dimensional strong topological insulator Bi(Sb)Se(Te) family has layered structures composed of quintuple layers(QLs) stacked together by van der Waals interaction. Here we successfully grow twistedly stacked Sb_2Te_3 QLs and investigate the effect of twist angels on the hybridization gaps below the thickness limit. It is found that the hybridization gap can be tuned for films of three QLs, which may lead to quantum spin Hall states.Signatures of gap-closing are found in 3-QL films. The successful in situ application of this approach opens a new route to search for exotic physics in topological insulators.

Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon- on-insulator （SOI） heterojunction bipolar transistors （HBTs） and consider their vertical and lateral impact ionizations for the first time. Supported by experimental data, the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT, resulting in a larger base-collector breakdown voltage. The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiCe SOI BiCMOS technology.

OTFT with Bilayer Gate Insulator and Modificative Electrode

An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.

Influence of Repetitive Impulse Waveforms on Surface Discharge Characteristics and Insulation Life for Polyimide Film

Accelerated insulation aging problems under high frequency repetitive impulses in power electronic transformers are drawing more and more attention in modern power systems. Partial discharge (PD) characteristics including discharge inception voltage, phase distribution and statistical characteristics on polyimide (PI) surface under different impulse waveforms and the insulation life of PI films are studied in this paper. We carry out experiments based on PD and insulation lifetime test systems, using five different types of repetitive impulses, including three bipolar waves and two unipolar waves. The experimental results show that there is little variation in discharge inception voltage under different waveforms, but great variation in phase distribution and statistical characteristics of PD. In addition, insulation life is approximately the same under different waveforms with the same polarity, and the aging rate under bipolar waveforms is larger than that under unipolar waveforms. We explain the differences between the bipolar and unipolar waveforms on insulation life, which can be concluded that the surface charge under unipolar waveform accumulates more significnatly compared with bipolar waveform and decreases the electric filed strength in discharging the air gap and inhibits surface discharge from occurring.

Mn-doped topological insulators: a review

Topological insulators (TIs) host robust edge or surface states protected by time-reversal symmetry (TRS), which makes them prime candidates for applications in spintronic devices. A promising avenue of research for the development of functional TI devices has involved doping of three-dimensional (3D) TI thin film and bulk materials with magnetic elements. This approach aims to break the TRS and open a surface band gap near the Dirac point. Utilizing this gapped surface state allows for a wide range of novel physical effects to be observed, paving a way for applications in spintronics and quantum computation. This review focuses on the research of 3D TIs doped with manganese (Mn). We summarize major progress in the study of Mn doped chalcogenide TIs, including Bi2Se3, Bi2Te3, and Bi2(Te,Se)3. The transport properties, in particular the anomalous Hall effect, of the Mn-doped Bi2Se3 are discussed in detail. Finally, we conclude with future prospects and challenges in further studies of Mn doped TIs.

Amorphous Er_2O_3 films for antireflection coatings

This paper reports that stoichiometric, amorphous, and uniform Er2O3 films are deposited on Si（001） substrates by a radio frequency magnetron sputtering technique. Ellipsometry measurements show that the refractive index of the Er2O3 films is very close to that of a single layer antireflection coating for a solar cell with an air surrounding medium during its working wavelength. For the 90-nm-thick film, the reflectance has a minimum lower than 3% at the wavelength of 600 nm and the weighted average refiectances （400-1000 nm） is 11.6%. The obtained characteristics indicate that Er2O3 films could be a promising candidate for antireflection coatings in solar cells.

Pattern Analysis on DC Breakdown Phenomenon of Polyethylene Films

Pattern analysis method was used to study DC breakdown characteristics of low-density polyethylene （LDPE） film and high-density polyethylene （HDPE） film, with particular attention paid to the breakdown phenomenon identification. The breakdown pattern （BP） was recorded by a monocular-video-zoom microscope. The records showed that the effective area of BP was almost identical to the types of electrodes. The effective area od. The diameter was obtained by a mathematical was calculated by a mathematical integral methstatistic method. The study revealed that the DC breakdown voltage of LDPE was lower than that of HDPE. The diameter and effective area of LDPE were smaller than those of HDPE, but it is opposite for the condition of the needle-plane electrode with plane electrode grounded. As for the needle-plane electrode, the diameter and effective area with the films near the needle electrode were smaller than those near the plane electrode, and those in the middle of air gap were between them. As for the sphere-plane electrode, the diameter and effective area with the films near the plane electrode were smaller than those near the sphere electrode, and those in the middle of air gap were between them.