The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer pol...The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer polishing,maintaining a constant pressure value applied by the polishing head is essential to achieve the desired flatness of the wafer.The accuracy of the downward pressure output by the polishing head is a crucial factor in producing flat wafers.In this paper,the uncertainty component of downward pressure is calculated and its measurement uncertainty is evaluated,and a method for calculating downward pressure uncertainty traceable to international basic unit is established.Therefore,the reliability of double side polishing machine has been significantly improved.展开更多
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of...We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.展开更多
CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abra...CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the subsurface.When a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly weakened.Moreover,this new damage type nearly disappears on the subsurface.展开更多
Non-spherical colloidal silica nanoparticle was prepared by a simple new method, and its particle size distribution and shape morphology were characterized by dynamic light scattering(DLS) and the Focus Ion Beam(FIB) ...Non-spherical colloidal silica nanoparticle was prepared by a simple new method, and its particle size distribution and shape morphology were characterized by dynamic light scattering(DLS) and the Focus Ion Beam(FIB) system. This kind of novel colloidal silica particles can be well used in chemical mechanical polishing(CMP) of sapphire wafer surface. And the polishing test proves that non-spherical colloidal silica slurry shows much higher material removal rate(MRR) with higher coefficient of friction(COF) when compared to traditional large spherical colloidal silica slurry with particle size 80 nm by DLS. Besides, sapphire wafer polished by non-spherical abrasive also has a good surface roughness of 0.460 6 nm. Therefore, non-spherical colloidal silica has shown great potential in the CMP field because of its higher MRR and better surface roughness.展开更多
This research has successfully developed an advance d manufacturing system for 300mm silicon wafer,using fixed abrasive instead o f conventional free slurry,to provide a totally integrated solution for achievi ng the ...This research has successfully developed an advance d manufacturing system for 300mm silicon wafer,using fixed abrasive instead o f conventional free slurry,to provide a totally integrated solution for achievi ng the surface roughness Ra<1 nm(Ry<5～6 nm) and the global flatness<O.2μm /300 mm.In addition to high throughput rate,this system significantly reduc es the total energy consumption by 70%,compared with the current process used for 200mm Si wafer.This paper describes the principle of material removal,st ate-of-the-art technologies and kinematical analysis for one-stop finishing o f 300mm Si wafer by fixed abrasive process.展开更多
文摘The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer polishing,maintaining a constant pressure value applied by the polishing head is essential to achieve the desired flatness of the wafer.The accuracy of the downward pressure output by the polishing head is a crucial factor in producing flat wafers.In this paper,the uncertainty component of downward pressure is calculated and its measurement uncertainty is evaluated,and a method for calculating downward pressure uncertainty traceable to international basic unit is established.Therefore,the reliability of double side polishing machine has been significantly improved.
文摘We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.
基金support from the Key Project of the National Natural Science Foundation of China (No. 50535020)
文摘CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the subsurface.When a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly weakened.Moreover,this new damage type nearly disappears on the subsurface.
基金Funded by the National Major Scientific and Technological Special Project during the Twelfth Five-year Plan Period(No.2009ZX02030-1)the National Natural Science Foundation of China(No.51205387)the Science and Technology Commission of Shanghai(No.11nm0500300),the Science and Technology Commission of Shanghai(No.14XD1425300)
文摘Non-spherical colloidal silica nanoparticle was prepared by a simple new method, and its particle size distribution and shape morphology were characterized by dynamic light scattering(DLS) and the Focus Ion Beam(FIB) system. This kind of novel colloidal silica particles can be well used in chemical mechanical polishing(CMP) of sapphire wafer surface. And the polishing test proves that non-spherical colloidal silica slurry shows much higher material removal rate(MRR) with higher coefficient of friction(COF) when compared to traditional large spherical colloidal silica slurry with particle size 80 nm by DLS. Besides, sapphire wafer polished by non-spherical abrasive also has a good surface roughness of 0.460 6 nm. Therefore, non-spherical colloidal silica has shown great potential in the CMP field because of its higher MRR and better surface roughness.
文摘This research has successfully developed an advance d manufacturing system for 300mm silicon wafer,using fixed abrasive instead o f conventional free slurry,to provide a totally integrated solution for achievi ng the surface roughness Ra<1 nm(Ry<5～6 nm) and the global flatness<O.2μm /300 mm.In addition to high throughput rate,this system significantly reduc es the total energy consumption by 70%,compared with the current process used for 200mm Si wafer.This paper describes the principle of material removal,st ate-of-the-art technologies and kinematical analysis for one-stop finishing o f 300mm Si wafer by fixed abrasive process.
