Analysis of Drain Modulation for High Voltage GaN Power Amplifier Considering Parasitics

For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.

Modulation of drain current as a function of energies substrate for InP HEMT devices

We present the drain current modulation for an HEMT using the TCAD SILVACO simulation tool with a drift–diffusion model at ambient temperature. The obtained results show that the decreases of substrate energies induce the decreasing of the obtained drain current similarly to the transconductance, which described the device due to increasing the transferred electrons concentration towards the substrate region, consequently to increase the molar fraction where the concentration of transferred electrons increases from 49 × 10;to 65 × 10;cm;when the molar fraction increases from 0.1 to 0.9. On the other hand, the decrease of molar fraction from 0.9 to 0.1 induces the increasing of drain current by 63%, where it increases from 1.1 mA/mm to 3 mA/mm at V;= 0.6 V and V;= 1 V. This fact leads to ensuring the possibility of using the obtained results of this work related to drain current for producing performances devices that brings together the AC characteristics of HEMT with a weak drain current, which is important in the bioengineering domain.