In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
Over the last few years, smart grids have become a topic of intensive research, development and deployment across the world. This is due to the fact that, through the smart grid, stable and reliable power systems can ...Over the last few years, smart grids have become a topic of intensive research, development and deployment across the world. This is due to the fact that, through the smart grid, stable and reliable power systems can be achieved. This paper presents a fuzzy logic control for dual active bridge series resonant converters for DC smart grid application. The DC smart grid consists of wind turbine and photovoltaic generators, controllable and DC loads, and power converters. The proposed control method has been applied to the controllable load＇s and the grid side＇s dual active bridge series resonant converters for attaining control of the power system. It has been used for management of controllable load＇s state of charge, DC feeder＇s voltage stability during the loads and power variations from wind energy and photovoltaic generation and power flow management between the grid side and the DC smart grid. The effectiveness of the proposed DC smart grid operation has been verified by simulation results obtained by using MATLAB and PLECS cards.展开更多
High efficiency and fast dynamic response are two main control objectives for dual active bridge(DAB)DC-DC converters. Traditional extended phase shift(EPS)control can significantly enhance the conversion efficiency o...High efficiency and fast dynamic response are two main control objectives for dual active bridge(DAB)DC-DC converters. Traditional extended phase shift(EPS)control can significantly enhance the conversion efficiency of DAB DC-DC converters by reducing current stress;however, it cannot fulfill fast dynamic response requirements. In this paper, a novel hybrid control scheme consisting of EPS control and direct power control(DPC),named as EPS-DPC, is proposed. EPS-DPC control has salient features in both efficiency and dynamic performance. In order to verify the outstanding performance of the proposed EPS-DPC scheme, an experimental comparison was carried out on a scale-down DAB DC-DC converter among several control strategies, including single phase shift control with traditional voltage-loop(SPS-TVL), EPS control with traditional voltage-loop(EPSVTL), and EPS-DPC. Experimental results have been high consistent with theoretical analysis, and verified these advantages of the proposed EPS-DPC scheme.展开更多
随着双有源全桥(dual active bridge,DAB)变换器开关频率的提升,半导体器件的开关损耗占比越来越大,基于回流功率、电感电流峰值或有效值的单目标效率优化策略的优势逐渐丧失。为提升DAB变换器的高频工况运行效率,文中对DAB最优模态与...随着双有源全桥(dual active bridge,DAB)变换器开关频率的提升,半导体器件的开关损耗占比越来越大,基于回流功率、电感电流峰值或有效值的单目标效率优化策略的优势逐渐丧失。为提升DAB变换器的高频工况运行效率,文中对DAB最优模态与优化目标进行定量分析与选择,提出一种可同时实现电感电流有效值准最优、宽范围软开通的移相策略,在该策略下轻重载工况所有开关管均可实现软开通,中载仅有两个开关管丢失软开通。为保证软开通的有效实现,根据电荷交换和死区时长两个条件推导实现软开通所需电流的统一表达式。再者,将软开通谐振过程线性化处理,所得简化表达式可与本文移相模态相结合,可实现任意开关管在任意模态下的软开通。最后,搭建6.6 k W/150 k Hz的碳化硅实验平台进行验证。实验结果表明,所研究的多目标优化策略可同时减小开通损耗与导通损耗,有效提升DAB变换器在高频工况下的运行效率。展开更多
随着宽禁带功率半导体器件的广泛使用,更高开关频率的双有源桥(dual active bridge,DAB)变换器带来了更大的开关损耗,对于软开关技术提出更高要求。为了进一步拓展零电压开通(zero-voltage switching,ZVS)范围,文中对ZVS精确模型和传统...随着宽禁带功率半导体器件的广泛使用,更高开关频率的双有源桥(dual active bridge,DAB)变换器带来了更大的开关损耗,对于软开关技术提出更高要求。为了进一步拓展零电压开通(zero-voltage switching,ZVS)范围,文中对ZVS精确模型和传统电感电流全局最优条件方法进行分析,提出一种结合励磁电流运行的移相调制策略,该策略可实现DAB变换器全功率范围内所有开关管的ZVS运行(8-ZVS运行)。在考虑开关管非线性特性和死区时间限制基础上得到更精确的ZVS模型,并推导引入励磁电流的ZVS模型。此外,所提出的控制方案具有无缝模式转换的特点,电感电流的有效值也可以达到准最佳状态。最后,搭建6kW/150kHz的高频DAB变换器样机以验证模型有效性。实验结果表明,该控制算法可以在任意模式和工况下实现8-ZVS运行,从而提升系统在轻载和中载工况下运行效率。展开更多
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
文摘Over the last few years, smart grids have become a topic of intensive research, development and deployment across the world. This is due to the fact that, through the smart grid, stable and reliable power systems can be achieved. This paper presents a fuzzy logic control for dual active bridge series resonant converters for DC smart grid application. The DC smart grid consists of wind turbine and photovoltaic generators, controllable and DC loads, and power converters. The proposed control method has been applied to the controllable load＇s and the grid side＇s dual active bridge series resonant converters for attaining control of the power system. It has been used for management of controllable load＇s state of charge, DC feeder＇s voltage stability during the loads and power variations from wind energy and photovoltaic generation and power flow management between the grid side and the DC smart grid. The effectiveness of the proposed DC smart grid operation has been verified by simulation results obtained by using MATLAB and PLECS cards.
基金supported by the National Natural Science Foundation of China(No.51577160)
文摘High efficiency and fast dynamic response are two main control objectives for dual active bridge(DAB)DC-DC converters. Traditional extended phase shift(EPS)control can significantly enhance the conversion efficiency of DAB DC-DC converters by reducing current stress;however, it cannot fulfill fast dynamic response requirements. In this paper, a novel hybrid control scheme consisting of EPS control and direct power control(DPC),named as EPS-DPC, is proposed. EPS-DPC control has salient features in both efficiency and dynamic performance. In order to verify the outstanding performance of the proposed EPS-DPC scheme, an experimental comparison was carried out on a scale-down DAB DC-DC converter among several control strategies, including single phase shift control with traditional voltage-loop(SPS-TVL), EPS control with traditional voltage-loop(EPSVTL), and EPS-DPC. Experimental results have been high consistent with theoretical analysis, and verified these advantages of the proposed EPS-DPC scheme.
文摘随着双有源全桥(dual active bridge,DAB)变换器开关频率的提升,半导体器件的开关损耗占比越来越大,基于回流功率、电感电流峰值或有效值的单目标效率优化策略的优势逐渐丧失。为提升DAB变换器的高频工况运行效率,文中对DAB最优模态与优化目标进行定量分析与选择,提出一种可同时实现电感电流有效值准最优、宽范围软开通的移相策略,在该策略下轻重载工况所有开关管均可实现软开通,中载仅有两个开关管丢失软开通。为保证软开通的有效实现,根据电荷交换和死区时长两个条件推导实现软开通所需电流的统一表达式。再者,将软开通谐振过程线性化处理,所得简化表达式可与本文移相模态相结合,可实现任意开关管在任意模态下的软开通。最后,搭建6.6 k W/150 k Hz的碳化硅实验平台进行验证。实验结果表明,所研究的多目标优化策略可同时减小开通损耗与导通损耗,有效提升DAB变换器在高频工况下的运行效率。
文摘随着宽禁带功率半导体器件的广泛使用,更高开关频率的双有源桥(dual active bridge,DAB)变换器带来了更大的开关损耗,对于软开关技术提出更高要求。为了进一步拓展零电压开通(zero-voltage switching,ZVS)范围,文中对ZVS精确模型和传统电感电流全局最优条件方法进行分析,提出一种结合励磁电流运行的移相调制策略,该策略可实现DAB变换器全功率范围内所有开关管的ZVS运行(8-ZVS运行)。在考虑开关管非线性特性和死区时间限制基础上得到更精确的ZVS模型,并推导引入励磁电流的ZVS模型。此外,所提出的控制方案具有无缝模式转换的特点,电感电流的有效值也可以达到准最佳状态。最后,搭建6kW/150kHz的高频DAB变换器样机以验证模型有效性。实验结果表明,该控制算法可以在任意模式和工况下实现8-ZVS运行,从而提升系统在轻载和中载工况下运行效率。
