A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure opt...A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.展开更多
A major motivation for this work is to investigate a method of computer simulation for compensating fixed pattern noise of the infrared focal plane arrays. A mathematical model of the output signal of focal plane arra...A major motivation for this work is to investigate a method of computer simulation for compensating fixed pattern noise of the infrared focal plane arrays. A mathematical model of the output signal of focal plane array was established; a compensating algorithm utilizing reference source was derived and simulating programs were designed. The images of compensating process verify the influence of nonuniformity of responsibility and offset on fixed pattern noise. The result show that simulating method of investigating compensation technology for focal plane arrays is feasible, the generated images and methods can be used to the study of image recognition.展开更多
A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15...A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.展开更多
Readout integrated circuit(ROIC) is one of the most important components for hybrid-integrated infrared focal plane array(IRFPA). And it should be tested to ensure the product yield before bonding. This paper presents...Readout integrated circuit(ROIC) is one of the most important components for hybrid-integrated infrared focal plane array(IRFPA). And it should be tested to ensure the product yield before bonding. This paper presents an on-wafer testing system based on Labview for ROIC of IRFPA. The quantitative measurement can be conducted after determining whether there is row crosstalk or not in this system. This low-cost system has the benefits of easy expansion, upgrading, and flexibility, and it has been employed in the testing of several kinds of IRFPA ROICs to measure the parameters of saturated output voltage, non-uniformity, dark noise and dynamic range, etc.展开更多
As the infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum we...As the infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structtures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. In the paper recent progress in development of two color HgCdTe photodiodes and quantum well infrared photodetectors is presented. More attention is devoted to HgCdTe detectors. The two color detector arrays are based upon an n P N (the capital letters mean the materials with larger bandgap energy) HgCdTe triple layer heterojunction design. Vertically stacking the two p n junctions permits incorporation of both detectros into a single pixel. Both sequential mode and simultaneous mode detectors are fabricated. The mode of detection is determined by the fabrication process of the multilayer materials. Also the performances of stacked multicolor QWIPs detectors are presented. For multicolor arrays, QWIP’s narrow band spectrum is an advantage, resulting in low spectral crosstalk. The major challenge for QWIP is developing broadband or multicolor optical coupling structures that permit efficient absorption of all required spectral bands.展开更多
We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and m...We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.展开更多
We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, ...We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.展开更多
This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the tem...This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the temperature-and bias-dependent photocurrent spectra of very long wavelength(VLW) GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. Aided by band structure calculations, we propose a model of the double excited states that determine the working mechanism in VLW QWIPs. Secondly, we present an overview of a VLW QWIP focal plane array(FPA)with 320×256 pixels based on the bound to quasi-bound(BTQB) design. The technology of the manufacturing FPA based on the QWIP structures has been demonstrated. At the operating temperature of 45 K, the detectivity of QWIP FPA is larger than 1.4×10^(10) cm·Hz^(1/2)/W with a cutoff wavelength larger than 16 μm. Finally, to meet the needs of space applications, we proposed a new long wavelength quantum cascade detector with a broadband detection ranging from 7.6 μm to 10.4 μm. With a pair of identical coupled quantum wells separated by a thin barrier, acting as absorption regions, the relative linewidth(?E/E) of response can be dramatically broadened to 30.7%. It is shown that the spectral shape and linewidth can be tuned by the thickness of the thin barrier, while it is insensitive to the working temperature. The device can work above liquid nitrogen temperature with a peak responsivity of 63 mA/W and Johnson noise limited detectivity of 5.1×10~9 cm·Hz^(1/2)/W.展开更多
A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS inv...A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K （F / # = 0.8） and 588 inK, respectively.展开更多
基金Supported by the self-funded project of Kunming Institute of Physics。
文摘A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.
文摘A major motivation for this work is to investigate a method of computer simulation for compensating fixed pattern noise of the infrared focal plane arrays. A mathematical model of the output signal of focal plane array was established; a compensating algorithm utilizing reference source was derived and simulating programs were designed. The images of compensating process verify the influence of nonuniformity of responsibility and offset on fixed pattern noise. The result show that simulating method of investigating compensation technology for focal plane arrays is feasible, the generated images and methods can be used to the study of image recognition.
基金supported by the National Basic Research Program of China(Grant Nos.2013CB932904 and 2011CB922201)the National Special Funds for the Development of Major Research Equipment and Instruments,China(Grant No.2012YQ140005)the National Natural Science Foundation of China(Grant Nos.61274013,61290303,and 61306013)
文摘A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.
文摘Readout integrated circuit(ROIC) is one of the most important components for hybrid-integrated infrared focal plane array(IRFPA). And it should be tested to ensure the product yield before bonding. This paper presents an on-wafer testing system based on Labview for ROIC of IRFPA. The quantitative measurement can be conducted after determining whether there is row crosstalk or not in this system. This low-cost system has the benefits of easy expansion, upgrading, and flexibility, and it has been employed in the testing of several kinds of IRFPA ROICs to measure the parameters of saturated output voltage, non-uniformity, dark noise and dynamic range, etc.
文摘As the infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structtures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. In the paper recent progress in development of two color HgCdTe photodiodes and quantum well infrared photodetectors is presented. More attention is devoted to HgCdTe detectors. The two color detector arrays are based upon an n P N (the capital letters mean the materials with larger bandgap energy) HgCdTe triple layer heterojunction design. Vertically stacking the two p n junctions permits incorporation of both detectros into a single pixel. Both sequential mode and simultaneous mode detectors are fabricated. The mode of detection is determined by the fabrication process of the multilayer materials. Also the performances of stacked multicolor QWIPs detectors are presented. For multicolor arrays, QWIP’s narrow band spectrum is an advantage, resulting in low spectral crosstalk. The major challenge for QWIP is developing broadband or multicolor optical coupling structures that permit efficient absorption of all required spectral bands.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10732080 and 10627201)the National Basic Research Program of China (Grant No. 2006CB300404)
文摘We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.
基金supported by the National Natural Science Foundation of China(Nos.U1037602,61274013,61290303)the National Basic Research Program of China(Nos.2010CB327602,2012CB932701,2013CB932904)
文摘We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.
基金Project supported by National Key Research and Development Program of China(Grant No.2016YFB0402402)the National Natural Science Foundation of China(Grant No.61521005)
文摘This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the temperature-and bias-dependent photocurrent spectra of very long wavelength(VLW) GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. Aided by band structure calculations, we propose a model of the double excited states that determine the working mechanism in VLW QWIPs. Secondly, we present an overview of a VLW QWIP focal plane array(FPA)with 320×256 pixels based on the bound to quasi-bound(BTQB) design. The technology of the manufacturing FPA based on the QWIP structures has been demonstrated. At the operating temperature of 45 K, the detectivity of QWIP FPA is larger than 1.4×10^(10) cm·Hz^(1/2)/W with a cutoff wavelength larger than 16 μm. Finally, to meet the needs of space applications, we proposed a new long wavelength quantum cascade detector with a broadband detection ranging from 7.6 μm to 10.4 μm. With a pair of identical coupled quantum wells separated by a thin barrier, acting as absorption regions, the relative linewidth(?E/E) of response can be dramatically broadened to 30.7%. It is shown that the spectral shape and linewidth can be tuned by the thickness of the thin barrier, while it is insensitive to the working temperature. The device can work above liquid nitrogen temperature with a peak responsivity of 63 mA/W and Johnson noise limited detectivity of 5.1×10~9 cm·Hz^(1/2)/W.
基金Project supported by the Chinese Academy of Sciences Knowledge Innovation Project(No.07YF031001)the Natural Science Foundation of Jiangsu Province,China(No.BK2012219),the Key Lab of Microelectronics Device and Integration Technology,China
文摘A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K （F / # = 0.8） and 588 inK, respectively.
