Layer-type LiNi0.9Mn0.1O2is promising to be the primary cathode material for lithium-ion batteries(LIBs)due to its excellent electrochemical performance.Unfortunately,the cathode with high nickel content suffers from ...Layer-type LiNi0.9Mn0.1O2is promising to be the primary cathode material for lithium-ion batteries(LIBs)due to its excellent electrochemical performance.Unfortunately,the cathode with high nickel content suffers from severely detrimental structural transformation that causes rapid capacity attenuation.Herein,site-specific dual-doping with Fe and Mg ions is proposed to enhance the structural stability of LiNi0.9Mn0.1O2.The Fe3+dopants are inserted into transition metal sites(3b)and can favorably provide additional redox potential to compensate for charge and enhance the reversibility of anionic redox.The Mg ions are doped into the Li sites(3a)and serve as O_(2)^(-)-Mg^(2+)-O_(2)^(-)pillar to reinforce the electrostatic cohesion between the two adjacent transition-metal layers,which further suppress the cracking and the generation of harmful phase transitions,ultimately improving the cyclability.The theoretical calculations,including Bader charge and crystal orbital Hamilton populations(COHP)analyses,confirm that the doped Fe and Mg can form stable bonds with oxygen and the electrostatic repulsion of O_(2)^(-)-O_(2)^(-)can be effectively suppressed,which effectively mitigates oxygen anion loss at the high delithiation state.This dual-site doping strategy offers new avenues for understanding and regulating the crystalline oxygen redox and demonstrates significant potential for designing high-performance cobalt-free nickel-rich cathodes.展开更多
The scattering of normally incident water waves by two surface-piercing inclined perforated barriers in water with a uniform finite depth is investigated within the framework of linear water wave theory.Considering th...The scattering of normally incident water waves by two surface-piercing inclined perforated barriers in water with a uniform finite depth is investigated within the framework of linear water wave theory.Considering that thin barriers are zero-thickness,a novel numerical method involving the the coupling of the dual boundary element method(DBEM)with damping layers is applied.In order to effectively damp out the reflected waves,two damping layers,instead of pseudoboundaries are implemented near the two side boundaries of the computational domain.Thus,the modified linearized free surface boundary conditions are formulated and used for solving both the ordinary boundary integral equation as well as the hypersingular boundary integral equation for degenerate boundaries.The newly developed numerical method is validated against analytical methods using the matched eigenfunction expansion method for the special case of two vertical barriers or the inclined angle to the vertical being zero.The influence of the length of the two damping layers has been discussed.Moreover,these findings are also validated against previous results for several cases.After validation,the numerical results for the reflection coefficient,transmission coefficient and dissipation coefficient are obtained by varying the inclination angle and porosity-effect parameter.The effects of both the inclination angle and the porosity on the amplitudes of wave forces acting on both the front and rear barriers are also investigated.It is found that the effect of the inclination angle mainly shifts the location of the extremal values of the reflection and the transmission coefficients.Additionally,a moderate value of the porosity-parameter is quite effective at dissipating wave energy and mitigating the wave loads on dual barriers.展开更多
An explosion-proof dual throttling air-conditioning system was put forward to solve the heat dissipation and internal dewing problems of explosion-proof frequency converter in the underground coal mine. This study inv...An explosion-proof dual throttling air-conditioning system was put forward to solve the heat dissipation and internal dewing problems of explosion-proof frequency converter in the underground coal mine. This study investigated the feasibility and benefits of explosion-proof dual throttling cooling and dehumidification air-conditioning system applied to the explosion-proof frequency converter. The physical model of dual throttling air-conditioning system was established and its performance parameter was described by mathematical method. The design calculation of the system has also been done. The experimental result showed that the system reached the steady state at the refrigeration mode after running 45 min, and the maximum internal temperature of the flame-proof cavity was 31.0 ℃. The system reached the steady state at the dehumidification mode after running 37 min. The maximum internal relative humidity and temperature of the flame-proof cavity were 33.4% and 36.3 ℃, respectively. Therefore, the proposed system had excellent ability of heat dissipation and avoided internal dewing. Compared with water cooling system, it was more energy-saving and economical. The airflow field of dual throttling air-conditioning system was also studied by CFD simulation. It was found that the result of CFD numerical simulation was highly consistent with the experimental data.展开更多
A silicon carbide (SIC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to ...A silicon carbide (SIC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lowerbuffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.展开更多
An analysis is carried out for dual solutions of the boundary layer flow of Maxwell fluid over a permeable shrinking sheet. In the investigation, a constant wall mass transfer is considered. With the help of similarit...An analysis is carried out for dual solutions of the boundary layer flow of Maxwell fluid over a permeable shrinking sheet. In the investigation, a constant wall mass transfer is considered. With the help of similarity transformations, the governing partial differential equations(PDEs) are converted into a nonlinear self-similar ordinary differential equation(ODE). For the numerical solution of transformed self-similar ODE, the shooting method is applied. The study reveals that the steady flow of Maxwell fluid is possible with a smaller amount of imposed mass suction compared with the viscous fluid flow. Dual solutions for the velocity distribution are obtained. Also, the increase of Deborah number reduces the boundary layer thickness for both solutions.展开更多
In this study the performance of organic light-emitting diodes (OLEDs) are enhanced significantly, which is based on dual electron transporting layers (13phen/CuPc). By adjusting the thicknesses of Bphen and CuPc,...In this study the performance of organic light-emitting diodes (OLEDs) are enhanced significantly, which is based on dual electron transporting layers (13phen/CuPc). By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m^2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm^2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED.展开更多
To promote high-speed boundary layer transition,this paper proposes an active self-sustaining dual jets(SDJ)actuator utilizing the energy of supersonic mainflow.Employing the nanoparticle-based planar laser scattering...To promote high-speed boundary layer transition,this paper proposes an active self-sustaining dual jets(SDJ)actuator utilizing the energy of supersonic mainflow.Employing the nanoparticle-based planar laser scattering(NPLS),supersonic flat-plate boundary layer transition induced by SDJ is experimentally investigated in an Ma-2.95 low-turbulence wind tunnel.Streamwise and spanwise NPLS images are obtained to analyze fine flow structures of the whole transition process.The results reveal the transition control mechanisms that on the one hand,the jet-induced shear layer produces unstable Kelvin–Helmholtz instabilities in the wake flow,on the other hand,the jets also generates an adverse pressure gradient in the boundary layer and induce unstable streak structures,which gradually break down into turbulence downstream.The paper provides a new method for transition control of high-speed boundary layer,and have prospect both in theory and engineering application.展开更多
Dual-active-layer(DAL)amorphous InGaZnO(IGZO)thin-film transistors(TFTs)are fabricated at low temperature without post-annealing.A bottom low-resistance(low-R)IGZO layer and a top high-resistance(high-R)IGZO layer con...Dual-active-layer(DAL)amorphous InGaZnO(IGZO)thin-film transistors(TFTs)are fabricated at low temperature without post-annealing.A bottom low-resistance(low-R)IGZO layer and a top high-resistance(high-R)IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition.The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT.A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities.It is found that the low-R layer improves the mobility,ON/OFF ratio,threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface.The high-R IGZO layer has a great impact on the hysteresis,which changes from clockwise to counterclockwise.The best TFT shows a mobility of 5.41 cm^2/V·s,a subthreshold swing of 95.0 mV/dec,an ON/OFF ratio of 6.70×10^7,a threshold voltage of 0.24 V,and a hysteresis voltage of 0.13 V.The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.展开更多
Si-doped zinc oxide(SZO) thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content o...Si-doped zinc oxide(SZO) thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress.展开更多
Buses and subways are essential to urban public transportation systems and an important engine for activating high-quality urban development. Traditional multi-modal transportation networks focus on the structural fea...Buses and subways are essential to urban public transportation systems and an important engine for activating high-quality urban development. Traditional multi-modal transportation networks focus on the structural feature mining of single-layer networks or each layer, ignoring the structural association of multi-layer networks. In this paper, we examined the multi-layer structural property of the bus-subway network of Shanghai at both global and nodal scales. A dual-layer model of the city’s bus and subway system was built. Single-layer complex network indicators were also extended. The paper also explored the spatial coupling properties of the city’s bus and subway system and identified its primary traffic nodes. It was found that 1) the dual-layer network increased the network’s connectivity to a certain extent and broke through the spatial limitation in terms of physical structure, making the connection between any two locations more direct. 2) The dual-layer network changed the topological characteristics of the transit network, increasing the centrality value and bit order in degree centrality, betweenness centrality, and closeness centrality to different degrees, and making each centrality tend to converge to the city center in spatial distribution. Enhancing the management of critical network nodes would help the integrated public transportation system operate more effectively and provide higher-quality services.展开更多
为提高电池重组时的均衡效率,在传统Buck-Boost均衡拓扑电路的基础上,设计了一种锂电池组双层均衡拓扑电路。组内采用Buck-Boost电路均衡,组间利用双向反激变压器进行均衡。均衡控制策略采用自适应模糊PID算法,以电池荷电状态(state of ...为提高电池重组时的均衡效率,在传统Buck-Boost均衡拓扑电路的基础上,设计了一种锂电池组双层均衡拓扑电路。组内采用Buck-Boost电路均衡,组间利用双向反激变压器进行均衡。均衡控制策略采用自适应模糊PID算法,以电池荷电状态(state of charge, SOC)为均衡变量,利用模糊控制算法对PID参数进行调节,缩短了均衡时间,提高了均衡效率。在Matlab/Simulink中搭建了锂电池组双层均衡拓扑电路和自适应模糊PID控制算法模型。实验结果表明:在不同工作状态下,所提出的电池组均衡拓扑及其控制策略将均衡时间效率平均提高了58.36%,验证了该方案的有效性。展开更多
基金the financial supports from the Key Research and Development Project in Shaanxi Province(2023-YBGY-446)the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD003)。
文摘Layer-type LiNi0.9Mn0.1O2is promising to be the primary cathode material for lithium-ion batteries(LIBs)due to its excellent electrochemical performance.Unfortunately,the cathode with high nickel content suffers from severely detrimental structural transformation that causes rapid capacity attenuation.Herein,site-specific dual-doping with Fe and Mg ions is proposed to enhance the structural stability of LiNi0.9Mn0.1O2.The Fe3+dopants are inserted into transition metal sites(3b)and can favorably provide additional redox potential to compensate for charge and enhance the reversibility of anionic redox.The Mg ions are doped into the Li sites(3a)and serve as O_(2)^(-)-Mg^(2+)-O_(2)^(-)pillar to reinforce the electrostatic cohesion between the two adjacent transition-metal layers,which further suppress the cracking and the generation of harmful phase transitions,ultimately improving the cyclability.The theoretical calculations,including Bader charge and crystal orbital Hamilton populations(COHP)analyses,confirm that the doped Fe and Mg can form stable bonds with oxygen and the electrostatic repulsion of O_(2)^(-)-O_(2)^(-)can be effectively suppressed,which effectively mitigates oxygen anion loss at the high delithiation state.This dual-site doping strategy offers new avenues for understanding and regulating the crystalline oxygen redox and demonstrates significant potential for designing high-performance cobalt-free nickel-rich cathodes.
基金financially supported by the National Natural Science Foundation of China(Grant Nos.51809209 and 11702244)the Open Fund of Key Laboratory of Water-Sediment Sciences and Water Disaster Prevention of Hunan Province(Grant No.2021SS04).
文摘The scattering of normally incident water waves by two surface-piercing inclined perforated barriers in water with a uniform finite depth is investigated within the framework of linear water wave theory.Considering that thin barriers are zero-thickness,a novel numerical method involving the the coupling of the dual boundary element method(DBEM)with damping layers is applied.In order to effectively damp out the reflected waves,two damping layers,instead of pseudoboundaries are implemented near the two side boundaries of the computational domain.Thus,the modified linearized free surface boundary conditions are formulated and used for solving both the ordinary boundary integral equation as well as the hypersingular boundary integral equation for degenerate boundaries.The newly developed numerical method is validated against analytical methods using the matched eigenfunction expansion method for the special case of two vertical barriers or the inclined angle to the vertical being zero.The influence of the length of the two damping layers has been discussed.Moreover,these findings are also validated against previous results for several cases.After validation,the numerical results for the reflection coefficient,transmission coefficient and dissipation coefficient are obtained by varying the inclination angle and porosity-effect parameter.The effects of both the inclination angle and the porosity on the amplitudes of wave forces acting on both the front and rear barriers are also investigated.It is found that the effect of the inclination angle mainly shifts the location of the extremal values of the reflection and the transmission coefficients.Additionally,a moderate value of the porosity-parameter is quite effective at dissipating wave energy and mitigating the wave loads on dual barriers.
基金Supported by the National Basic Research Program of China("973"Program,No.2009CB219907)
文摘An explosion-proof dual throttling air-conditioning system was put forward to solve the heat dissipation and internal dewing problems of explosion-proof frequency converter in the underground coal mine. This study investigated the feasibility and benefits of explosion-proof dual throttling cooling and dehumidification air-conditioning system applied to the explosion-proof frequency converter. The physical model of dual throttling air-conditioning system was established and its performance parameter was described by mathematical method. The design calculation of the system has also been done. The experimental result showed that the system reached the steady state at the refrigeration mode after running 45 min, and the maximum internal temperature of the flame-proof cavity was 31.0 ℃. The system reached the steady state at the dehumidification mode after running 37 min. The maximum internal relative humidity and temperature of the flame-proof cavity were 33.4% and 36.3 ℃, respectively. Therefore, the proposed system had excellent ability of heat dissipation and avoided internal dewing. Compared with water cooling system, it was more energy-saving and economical. The airflow field of dual throttling air-conditioning system was also studied by CFD simulation. It was found that the result of CFD numerical simulation was highly consistent with the experimental data.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076072)
文摘A silicon carbide (SIC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lowerbuffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.
基金the financial support of National Board for Higher Mathematics(NBHM),DAE,Mumbai,Indiapartially supported by Deanship of Scientific Research(DSR),King Abdulaziz University,Jeddah,Saudi Arabia
文摘An analysis is carried out for dual solutions of the boundary layer flow of Maxwell fluid over a permeable shrinking sheet. In the investigation, a constant wall mass transfer is considered. With the help of similarity transformations, the governing partial differential equations(PDEs) are converted into a nonlinear self-similar ordinary differential equation(ODE). For the numerical solution of transformed self-similar ODE, the shooting method is applied. The study reveals that the steady flow of Maxwell fluid is possible with a smaller amount of imposed mass suction compared with the viscous fluid flow. Dual solutions for the velocity distribution are obtained. Also, the increase of Deborah number reduces the boundary layer thickness for both solutions.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60876046)the Tianjin Natural Science Foundation of China (Grant No. 10JCYBJC01100)
文摘In this study the performance of organic light-emitting diodes (OLEDs) are enhanced significantly, which is based on dual electron transporting layers (13phen/CuPc). By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m^2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm^2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11602299,11872374,and 51809271)
文摘To promote high-speed boundary layer transition,this paper proposes an active self-sustaining dual jets(SDJ)actuator utilizing the energy of supersonic mainflow.Employing the nanoparticle-based planar laser scattering(NPLS),supersonic flat-plate boundary layer transition induced by SDJ is experimentally investigated in an Ma-2.95 low-turbulence wind tunnel.Streamwise and spanwise NPLS images are obtained to analyze fine flow structures of the whole transition process.The results reveal the transition control mechanisms that on the one hand,the jet-induced shear layer produces unstable Kelvin–Helmholtz instabilities in the wake flow,on the other hand,the jets also generates an adverse pressure gradient in the boundary layer and induce unstable streak structures,which gradually break down into turbulence downstream.The paper provides a new method for transition control of high-speed boundary layer,and have prospect both in theory and engineering application.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674405,61874139,and 11675280)
文摘Dual-active-layer(DAL)amorphous InGaZnO(IGZO)thin-film transistors(TFTs)are fabricated at low temperature without post-annealing.A bottom low-resistance(low-R)IGZO layer and a top high-resistance(high-R)IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition.The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT.A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities.It is found that the low-R layer improves the mobility,ON/OFF ratio,threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface.The high-R IGZO layer has a great impact on the hysteresis,which changes from clockwise to counterclockwise.The best TFT shows a mobility of 5.41 cm^2/V·s,a subthreshold swing of 95.0 mV/dec,an ON/OFF ratio of 6.70×10^7,a threshold voltage of 0.24 V,and a hysteresis voltage of 0.13 V.The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076113 and 61274085)the Natural Science Foundation of Guangdong Province(Grant No.2016A030313474)the University Development Fund(Nanotechnology Research Institute,Grant No.00600009)of the University of Hong Kong,China
文摘Si-doped zinc oxide(SZO) thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress.
文摘Buses and subways are essential to urban public transportation systems and an important engine for activating high-quality urban development. Traditional multi-modal transportation networks focus on the structural feature mining of single-layer networks or each layer, ignoring the structural association of multi-layer networks. In this paper, we examined the multi-layer structural property of the bus-subway network of Shanghai at both global and nodal scales. A dual-layer model of the city’s bus and subway system was built. Single-layer complex network indicators were also extended. The paper also explored the spatial coupling properties of the city’s bus and subway system and identified its primary traffic nodes. It was found that 1) the dual-layer network increased the network’s connectivity to a certain extent and broke through the spatial limitation in terms of physical structure, making the connection between any two locations more direct. 2) The dual-layer network changed the topological characteristics of the transit network, increasing the centrality value and bit order in degree centrality, betweenness centrality, and closeness centrality to different degrees, and making each centrality tend to converge to the city center in spatial distribution. Enhancing the management of critical network nodes would help the integrated public transportation system operate more effectively and provide higher-quality services.
文摘为提高电池重组时的均衡效率,在传统Buck-Boost均衡拓扑电路的基础上,设计了一种锂电池组双层均衡拓扑电路。组内采用Buck-Boost电路均衡,组间利用双向反激变压器进行均衡。均衡控制策略采用自适应模糊PID算法,以电池荷电状态(state of charge, SOC)为均衡变量,利用模糊控制算法对PID参数进行调节,缩短了均衡时间,提高了均衡效率。在Matlab/Simulink中搭建了锂电池组双层均衡拓扑电路和自适应模糊PID控制算法模型。实验结果表明:在不同工作状态下,所提出的电池组均衡拓扑及其控制策略将均衡时间效率平均提高了58.36%,验证了该方案的有效性。