Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the s...Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field from the inductor. The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions,but the depth of the bottom pn junction in the substrate are both proposed and validated. For the first time, through the grounded p^＋-diffusion layer shielding the suhstrate from the electric field of the inductor, the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n wells. The quality factor is improved or reduced with the thickness of high resistance by 19%. This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field from the inductor.展开更多
Along with the introduction of the concept of dual-channel communication,we utilized the finite-difference time-domain（FDTD） method to simulate and measure the radiation pattern under certain plasma densities and pl...Along with the introduction of the concept of dual-channel communication,we utilized the finite-difference time-domain（FDTD） method to simulate and measure the radiation pattern under certain plasma densities and plasma collision frequencies.Results show that under certain settings,the radiation pattern of a plasma antenna resembles that of a metallic antenna.In contrast to a metallic antenna,a plasma antenna possesses other functionalities,such as dynamic reconfiguration and digital controllability.The data from simulation are similar to the measurement results,indicating that column plasma antenna can realize dual-channel communication.This work confirms the viability of realizing dual-channel communication by column plasma antenna,which adds a new but promising method for modern intelligent communication.展开更多
To explore the potential capacity of dual-fight-turn lanes at signalized intersections under mixed traffic conditions, we defined two conflict zones between right turn vehicles and through bicycle corresponding to dif...To explore the potential capacity of dual-fight-turn lanes at signalized intersections under mixed traffic conditions, we defined two conflict zones between right turn vehicles and through bicycle corresponding to different right turn flows from dual-right-turn lanes. Relationships between the arrival rate of bicycle group at each conflict zone and the saturation flow rate of right turn movement were investigated. A model based on gap acceptance theory was adopted to estimate the capacity of dual-right-turn lanes under mixed traffic conditions. An analysis was carried out using the collected data from three four-leg signalized intersections in Beijing, China, where the dual-right-turn lanes were used. In addition, we also discussed the patterns of bicycle lane in the urban area of Beijing, and classified it based on its characteristics in use. It is concluded that the two lanes of dual-fight-turn lanes produce different capacities under mixed traffic conditions, and the analysis on scenarios of dual-right-turn movement traversing bicycle traffic plays a key role in explaining the different capacity performance of the two right turn lanes. Error analysis of the model indicated that the model was rational.展开更多
文摘Dual pn junctions in lateral and vertical directions are formed by diffusing the p^＋ on the patterned n-well in standard CMOS technology, which are inserted under the inductor in order to reduce the currents in the substrate induced by the electromagnetic field from the inductor. The thickness of high resistance is not equivalent to the width of the depletion region of the vertical pn junctions,but the depth of the bottom pn junction in the substrate are both proposed and validated. For the first time, through the grounded p^＋-diffusion layer shielding the suhstrate from the electric field of the inductor, the width of the depletion regions of the lateral and vertical pn junctions are changed by increasing the voltage applied to the n wells. The quality factor is improved or reduced with the thickness of high resistance by 19%. This phenomenon validates the theory that the pn junction substrate isolation can reduce the loss caused by the currents in the substrate induced by the electromagnetic field from the inductor.
文摘Along with the introduction of the concept of dual-channel communication,we utilized the finite-difference time-domain（FDTD） method to simulate and measure the radiation pattern under certain plasma densities and plasma collision frequencies.Results show that under certain settings,the radiation pattern of a plasma antenna resembles that of a metallic antenna.In contrast to a metallic antenna,a plasma antenna possesses other functionalities,such as dynamic reconfiguration and digital controllability.The data from simulation are similar to the measurement results,indicating that column plasma antenna can realize dual-channel communication.This work confirms the viability of realizing dual-channel communication by column plasma antenna,which adds a new but promising method for modern intelligent communication.
文摘To explore the potential capacity of dual-fight-turn lanes at signalized intersections under mixed traffic conditions, we defined two conflict zones between right turn vehicles and through bicycle corresponding to different right turn flows from dual-right-turn lanes. Relationships between the arrival rate of bicycle group at each conflict zone and the saturation flow rate of right turn movement were investigated. A model based on gap acceptance theory was adopted to estimate the capacity of dual-right-turn lanes under mixed traffic conditions. An analysis was carried out using the collected data from three four-leg signalized intersections in Beijing, China, where the dual-right-turn lanes were used. In addition, we also discussed the patterns of bicycle lane in the urban area of Beijing, and classified it based on its characteristics in use. It is concluded that the two lanes of dual-fight-turn lanes produce different capacities under mixed traffic conditions, and the analysis on scenarios of dual-right-turn movement traversing bicycle traffic plays a key role in explaining the different capacity performance of the two right turn lanes. Error analysis of the model indicated that the model was rational.
