The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- latio...The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- lation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLASTM by Silvaco Inc.展开更多
A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculatio...A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as threshold voltage （Vt） and sub-threshold swing （SS）, as well as the device saturated current. The PSDG MOSFET transistor leakage current （loft） can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conventional 0.18 μm logic process flow.展开更多
文摘The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- lation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLASTM by Silvaco Inc.
文摘A new planar split dual gate （PSDG） MOSFET device, its characteristics and experimental results, as well as the three dimensional device simulations, are reported here for the first time. Both theoretical calculation and 3D simulation, as well as the experiment data, show that the two independent split dual gates can provide dynamical control of the device characteristics, such as threshold voltage （Vt） and sub-threshold swing （SS）, as well as the device saturated current. The PSDG MOSFET transistor leakage current （loft） can be reduced as much as 78% of the traditional single gate MOSFET. The PSDG is fabricated and fully compatible with our conventional 0.18 μm logic process flow.
