Hexagonal boron nitride(h-BN)films are synthesized by dual temperature zone low-pressure chemical vapor deposition(LPCVD)through using a single ammonia borane precursor on non-catalytic c-plane Al_(2)O_(3)substrates.T...Hexagonal boron nitride(h-BN)films are synthesized by dual temperature zone low-pressure chemical vapor deposition(LPCVD)through using a single ammonia borane precursor on non-catalytic c-plane Al_(2)O_(3)substrates.The grown films are confirmed to be h-BN films by various characterization methods.Meanwhile,the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied.It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different.The growth rates of the h-BN thin films show their decreasing trends with the rearward position,while the crystal quality is improved.This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61964001)the Key Research and Development Program of Jiangxi Province,China(Grant No.20212BBG73012)+3 种基金the Natural Science Foundation of Jiangxi Province,China(Grant No.20192BAB207033)the Key Scientific Research Projects of Henan Higher Education Institutions,China(Grant No.22A490001)the State Key Laboratory of Particle Detection and Electronics,China(Grant No.SKLPDE-KF-2019)the Foundation of Engineering Research Center of Nuclear Technology Application(East China Institute of Technology)(Grant No.HJSJYB2021-4)。
文摘Hexagonal boron nitride(h-BN)films are synthesized by dual temperature zone low-pressure chemical vapor deposition(LPCVD)through using a single ammonia borane precursor on non-catalytic c-plane Al_(2)O_(3)substrates.The grown films are confirmed to be h-BN films by various characterization methods.Meanwhile,the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied.It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different.The growth rates of the h-BN thin films show their decreasing trends with the rearward position,while the crystal quality is improved.This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.
